JP2550492Y2 - Package for storing semiconductor elements - Google Patents

Description

[Detailed description of the invention]

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device housing package for housing a semiconductor device therein.

[0002]

2. Description of the Related Art Conventionally, a package for accommodating a semiconductor element, particularly a semiconductor integrated circuit element, is made of an electrically insulating material such as alumina ceramics as shown in FIG. Metal layer 12 made of high melting point metal powder such as
And a Kovar metal (Fe-Ni-Co alloy) brazed to the metallized metal layer 12 via a brazing material 14 such as silver braze in order to electrically connect the semiconductor element to an external electric circuit. The semiconductor element 16 is housed in an insulating container including the insulating base 11 and the lid 15, and the external device includes the external lead terminal 13 made of an aluminum or 42 alloy (Fe—Ni alloy) or the like. A semiconductor device is obtained by hermetically sealing.

In the conventional package for accommodating a semiconductor element, when the external lead terminals 13 are brazed to each of the metallized metal layers 12 provided on the insulating substrate 11, the workability of the brazing is facilitated. When a metal layer having excellent corrosion resistance is deposited on the outer surface of the lead terminal 13 by plating, in order to facilitate the workability of the deposition, and further, when transporting the package for housing the semiconductor element, the external lead terminal is used. In order to prevent the external lead terminals 13 from being deformed by an external force applied to the external lead terminals 13, one end of each of the external lead terminals 13 is commonly connected to a band-shaped metal member 17 as shown in FIG. As a result, the external lead terminals 13 are brazed to the metallized metal layer 12 of the insulating base 11 and the plating metal layer is attached to the outer surface of the external lead terminals 13. It is adapted to significantly improve, and deformation during transportation can be effectively prevented.

The external lead terminal 13 is formed by forming an ingot (lumps) of Kovar metal or the like into a thin plate by a conventionally known rolling method and punching it into a predetermined shape by a metal punching method. The strip-shaped metal member 17 connected to one end of the external lead terminal 13 is also punched and formed at the same time as the formation of the external lead terminal 13.

[0005]

[Problems to be solved by the invention] However, recently,
In semiconductor device storage packages, the density of semiconductor elements housed in the package has become higher and higher, and the number of external lead terminals used in the package has become extremely large. Each external lead terminal has a narrow line width. However, it is becoming thinner and weaker in mechanical strength. Therefore, after the external lead terminal is brazed to the metallized metal layer provided on the insulating base, if the weight of the insulating base is applied to the external lead terminal, the external lead terminal is easily deformed. As a result, the external lead terminal is deformed. Cannot be accurately and reliably connected to an external predetermined electric circuit.

At the same time, the band-shaped metal member formed integrally with the external lead terminal has the same thin thickness as the external lead terminal, and its mechanical strength is greatly reduced. When an external force is applied to the band-shaped metal member, the band-shaped metal member is easily deformed by the external force. As a result, the external lead terminals connected to the band-shaped metal member are also greatly deformed, and the external lead terminals are connected to an external electric circuit. There is also a disadvantage that the connection cannot be made accurately and securely.

[0007]

According to the present invention, there is provided an insulating base comprising a mounting portion on which a semiconductor element is mounted and a plurality of metal layers to which electrodes of the semiconductor element are electrically connected. A lead frame in which one end of each of the plurality of external lead terminals is commonly connected to the inner side of a band-shaped metal member forming a frame, and a metal layer provided on the upper surface of the insulating base,
A semiconductor element housing package having the other end of each external lead terminal brazed, wherein an outer diameter of the band-shaped metal member is larger than an outer dimension of the band-shaped metal member, and a width of the band-shaped metal member is provided. A frame-shaped metal reinforcing member having a wider width is arranged, and the band-shaped metal member and the frame-shaped metal reinforcing member are joined via a joining member, and the supporting member which abuts on the lower surface of the insulating base is connected to the frame-shaped metal reinforcing member. The insulating base is sandwiched between an external lead terminal connected to the band-shaped metal member and a supporting member formed on the frame-shaped metal reinforcing member.

[0008]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail with reference to the accompanying drawings.

FIGS. 1 and 2 show an embodiment of a lead frame used in the present invention and a package for accommodating a semiconductor device using the lead frame. The lead frame indicated generally by 1 has a plurality of external lead terminals. 2 and a frame-shaped band-shaped metal member 3.

The external lead terminal 2 serves to electrically connect the semiconductor element housed in the insulating container of the semiconductor element housing package to an external electric circuit, one end of which constitutes the insulating container. The metallized metal layer 7 connected to the electrode of the semiconductor element provided on the upper surface of the metal layer 6 is brazed through a brazing material 8 such as silver brazing.

The plurality of external lead terminals 2 are connected in common to the inner side of a band-shaped metal member 3 whose other end side is formed in a frame shape. Each position is regulated, and a metal having excellent workability when brazing one end of the external lead terminal 2 to the metallized metal layer 7 of the insulating base 6 and an excellent corrosion resistance on the outer surface of the external lead terminal 2 are deposited by plating. It has the effect of improving the workability when performing.

The connection of the external lead terminals 2 to the strip-shaped metal member 3 is such that the distance between adjacent external lead terminals 2 corresponds to the distance between the metallized metal layers 7 provided on the insulating base 6.

Both the external lead terminal 2 and the frame-shaped band-shaped metal member 3 are made of Kovar metal (Fe-Ni-Co).
Alloy) and 42 alloy (Fe-Ni alloy), and are formed simultaneously by forming an ingot (lump) of Kovar metal or the like into a thin plate by a rolling process and punching it into a predetermined shape by a metal punching process. .

The lead frame 1 has an inner diameter larger than the outer dimension of the band-shaped metal member 3 outside the band-shaped metal member 3 constituting the lead frame 1, and has a width wider than the width of the band-shaped metal member 3 by, for example, 2 mm or more. And a frame-shaped metal reinforcing member 4 having the same.
Are joined at the corner 3a via the joining member 4a. The frame-shaped metal reinforcing member 4 has a large mechanical strength due to its wide width. Therefore, even if the band-shaped metal member 3 has a small thickness and a low mechanical strength, the strength is not reduced by the joining member to the band-shaped metal member 3. It is reinforced by the frame-shaped metal reinforcing member 4 joined via the 4a, and is not easily deformed even when an external force is applied to the band-shaped metal member 3.

Since the frame-shaped metal reinforcing member 4 is made of a metal material and is disposed outside the band-shaped metal member 3, a metal having excellent corrosion resistance is coated on the outer surface of the external lead terminal 2 by an electrolytic plating method. At the time of attachment, the charged particles of the electrolytic plating concentrate on the end of the strip-shaped metal member 3 and the external lead terminals 2
The variation is effectively prevented by the frame-shaped metal reinforcing member 4 even if the deposition amount of the plating metal is varied in the above, and a plating metal layer having a uniform thickness is formed on almost the entire outer surface of the external lead terminal 2. It becomes possible to wear.

The frame-shaped metal reinforcing member 4 has an inner diameter larger than the outer dimension of the band-shaped metal member 3 formed by punching a metal plate, and is larger than the width of the band-shaped metal member 3. It is formed with a wide width.

Further, the frame-shaped metal reinforcing member 4 has a support member 5 formed at a part thereof, one end of which is in contact with the lower surface of the insulating base 6. A metallized metal layer which is sandwiched from above and below to effectively prevent the weight of the insulating base 6 from being applied to the external lead terminals 2 to cause deformation of the external lead terminals 2 and to provide the external lead terminals 2 on the upper surface of the insulating base 6 When brazing to 7, the external lead terminal 2 has an effect of making the workability of alignment easier.

The support member 5 is formed on the inner side of the metal reinforcing member 4 at the same time as the frame-shaped metal reinforcing member 4 is formed by punching a metal plate. It is formed into a shape that abuts on the lower surface of the mounted insulating base 6 and easily supports the insulating base 6.

Next, a method of manufacturing the semiconductor device housing package of the present invention will be described with reference to an example shown in FIG.

First, as shown in FIG. 2, one end of an insulating base 6 and a plurality of external lead terminals 2 constituting an insulating container for accommodating a semiconductor element are commonly connected to the inner side of a band-shaped metal member 3 having a frame shape. Prepared lead frame 1 and frame-shaped metal reinforcing member 4 joined to band-shaped metal member 3 of lead frame 1 via a joining member and partially formed with supporting member 5.

The insulating substrate 6 has a plurality of metallized metal layers 7 on the upper surface thereof. The insulating substrate 6 having the metallized metal group 7 is an unfired ceramic sheet (green sheet) having a surface coated with a metal paste by printing. ) Are stacked and fired at a temperature of about 1400 to 1600 ° C. in a reducing atmosphere (in an H ₂ —N ₂ gas).

The unsintered ceramic sheet is formed into a slurry by adding a suitable solvent and a solvent to a ceramic raw material powder such as alumina (Al ₂ O ₃ ), silica (SlO ₂ ) or the like to form a slurry. It is formed by forming a sheet by a doctor blade method.

The metal paste is prepared by adding a suitable solvent and a solvent to a high melting point metal powder such as tungsten, molybdenum, manganese or the like, and mixing the powder with a known thick film method such as screen printing on the surface of the unfired ceramic sheet. Print applied.

The lead frame 1 in which one end of each of the plurality of external lead terminals 2 is commonly connected to the inner side of a band-shaped metal member 3 having a frame shape is made of a metal such as Kovar metal or 42 alloy. The ingot (lumps) is formed into a predetermined thickness and a predetermined shape by employing a conventionally known rolling method, punching method, or the like.

Further, the frame-shaped metal reinforcing member 4 partially formed with the supporting member 5 is made of a metal material.
According to the same method as that described above, the outside diameter of the band-shaped metal member 3 forming the frame shape constituting the lead frame 1 is larger than the outer dimension of the band-shaped metal member 3 and wider than the width of the band-shaped metal member 3. The frame-shaped metal reinforcing member 4 and the band-shaped metal member 3 of the lead frame 1 are joined to each other via a joining member 4a so as to be arranged and joined to the outside of the lead frame 1.

Next, an insulating substrate 6 having the metallized metal layer 7, a lead frame 1 and a frame-shaped metal reinforcing member 4 are provided on the upper surface of the insulating substrate 6 in a jig (not shown) made of carbon. Is set so that one end of the external lead terminal 2 is placed on the exposed portion with a brazing material 8 such as silver brazing therebetween, and the supporting member 5 is in contact with the lower surface of the insulating base 6.

In this case, one end of each external lead terminal 2 is connected to a band-shaped metal member 3 having a frame shape, and all the external lead terminals 2 are placed on the upper surface of the insulating base 6 because their positions are regulated. At a time on the metallized metal layer 7 provided,
At the same time, the insulating substrate 6 is sandwiched between the supporting member 5 abutting on the lower surface of the insulating substrate 6 and the external lead terminal 2 placed on the metallized metal layer 7 on the upper surface of the insulating substrate 6. Accordingly, the occurrence of displacement of the external lead terminals 2 can be more effectively prevented, and the reliability of the positioning of the external lead terminals 2 to the metallized metal layer 7 can be increased.

Next, the insulating substrate 6, the lead frame 1 and the frame-shaped metal reinforcing member 4 which have been aligned are placed in the
It is passed through a furnace heated to a temperature of 0 ° C., and the brazing material 8 is heated and melted to be brazed to the rise metal layer 7 having the external lead terminals 2.

Finally, a metal having excellent corrosion resistance such as nickel (Ni) or gold (Au) is deposited on the outer surface of the external lead terminal 2 brazed to the metallized metal layer 7 by electrolytic plating. As a result, a semiconductor element storage package as a product is completed.

In this case, one end of each of the external lead terminals 2 is commonly connected to the band-shaped metal member 3 having a frame shape. Therefore, only an electrode for electrolytic plating is connected to the band-shaped metal member 3. Thus, an electric field for plating can be applied to all the external lead terminals 2 in common, and the workability of electrolytic plating becomes extremely easy.

Further, since the frame-shaped metal reinforcing member 4 is joined to the outside of the band-shaped metal member 3, the charged particles during electrolytic plating do not concentrate on the end of the band-shaped metal member 3, and as a result, In addition, it is possible to deposit a plated metal layer to a uniform thickness on the outer surface of the external lead terminal 2 commonly connected to the band-shaped metal member 3.

Further, in the completed package for accommodating a semiconductor element, an annular metal reinforcing member 4 which is wider and has higher mechanical strength than the band-shaped metal member 3 is joined to the outside of the band-shaped metal member 3 constituting the lead frame 1. Since the mechanical strength of the band-shaped metal member 3 is reinforced by the ring-shaped metal reinforcing member 4, even when an external force is applied to the band-shaped metal member 3 when transporting a semiconductor element storage package or the like, the band-shaped metal member 3 is not required. As a result, deformation of the external lead terminal 2 connected to the strip-shaped metal member 3 is effectively prevented, and the external lead terminal 2 can be accurately and reliably connected to a predetermined external electric circuit. Can be connected.

Further, in the completed semiconductor device housing package, the supporting member 5 formed on the annular metal reinforcing member 4 abuts on the lower surface of the insulating base 6 to support the insulating base 6, so that the weight of the insulating base 6 is reduced by the weight of the external lead. No voltage is applied to the terminal 2, and as a result, the deformation of the external lead terminal 2 can be more effectively prevented, and the external lead terminal 2 can be accurately and reliably connected to a predetermined external electric circuit. Become.

[0034]

According to the semiconductor device housing package of the present invention, one end of each external lead terminal is commonly connected to the inner side of the band-shaped metal member having a frame shape, and its position is regulated. Therefore, when external lead terminals are individually brazed to each of the metallized metal layers provided on the upper surface of the insulating base constituting the insulating container for accommodating the semiconductor element, the alignment of each metallized metal layer with the external lead terminals is performed. All at once, and the workability of brazing the external lead terminals becomes extremely easy.

Further, since each external lead terminal is commonly connected to the strip-shaped metal member, when a metal having excellent corrosion resistance is layered on the outer surface of the external lead terminal by electrolytic plating, an electrode for electrolytic plating is formed. By simply connecting to the strip-shaped metal member, an electric field for plating can be commonly applied to all the external lead terminals, and the workability of depositing the corrosion-resistant metal becomes extremely easy.

Further, a frame-shaped metal reinforcing member having an inner diameter larger than the outer dimension of the band-shaped metal member is joined to the outside of the frame-shaped band-shaped metal member. As a result, the plating metal layer can be deposited to a uniform thickness over the entire outer surface of the external lead terminal commonly connected to the strip-shaped metal member.

Further, a frame-shaped metal reinforcing member wider than the band-shaped metal member and having higher mechanical strength is joined to the outside of the frame-shaped band-shaped metal member, and the mechanical strength of the band-shaped metal member is reduced by the frame-shaped metal reinforcing member. Even when an external force is applied to the band-shaped metal member such as when transporting the semiconductor element storage package because the reinforcing member is reinforced, the band-shaped metal member does not deform, and as a result, it is connected to the band-shaped metal member. The external lead terminal is effectively prevented from being deformed, so that the external lead terminal can be accurately and reliably connected to a predetermined external electric circuit.

Further, in the completed package for housing a semiconductor element, the supporting member formed on the frame-shaped metal reinforcing member abuts on the lower surface of the insulating base, and the weight of the insulating base is applied to the external lead terminals to support the insulating base. As a result, the deformation of the external lead terminals can be more effectively prevented, and the external lead terminals can be accurately and reliably connected to a predetermined external electric circuit.

[Brief description of the drawings]

FIG. 1 is a plan view showing an embodiment of a lead frame used in a package for housing a semiconductor device according to the present invention.

FIG. 2 is a cross-sectional view illustrating an example of the semiconductor device storage package according to the present invention;

FIG. 3 is a cross-sectional view of a conventional semiconductor element storage package.

FIG. 4 is a plan view of a lead frame used in a conventional package for housing a semiconductor element.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Lead frame 2 ... External lead terminal 3 ... Band-shaped metal member 4 ... Frame-shaped metal reinforcement member 5 ... Support member

Claims (1)

(57) [Scope of request for utility model registration] 1. An insulating base comprising a mounting portion on which a semiconductor element is mounted on an upper surface, a plurality of metal layers to which respective electrodes of the semiconductor element are electrically connected, and a plurality of external lead terminals, respectively. And a lead frame in which one end of each of the external lead terminals is commonly connected to the inner side of a frame-shaped band-shaped metal member, and the other end of each external lead terminal is brazed to a metal layer provided on the upper surface of the insulating base. A package for storing semiconductor elements, wherein a frame-shaped metal reinforcing member having an inner diameter larger than an outer dimension of the band-shaped metal member and having a width larger than a width of the band-shaped metal member is arranged outside the band-shaped metal member. An outer lead connected to the band-shaped metal member by joining the band-shaped metal member and the frame-shaped metal reinforcement member via a joining member and forming a support member in contact with the lower surface of the insulating base on the frame-shaped metal reinforcement member; Terminal and Package for housing semiconductor chip, characterized in that the sandwich the insulating base between the support members formed on Jo metal reinforcing member.