JPH10107240A - Package for containing image sensor device - Google Patents
Package for containing image sensor deviceInfo
- Publication number
- JPH10107240A JPH10107240A JP8256674A JP25667496A JPH10107240A JP H10107240 A JPH10107240 A JP H10107240A JP 8256674 A JP8256674 A JP 8256674A JP 25667496 A JP25667496 A JP 25667496A JP H10107240 A JPH10107240 A JP H10107240A
- Authority
- JP
- Japan
- Prior art keywords
- image sensor
- mounting portion
- sensor element
- metal layer
- metallized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Die Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、イメージセンサー
素子を収容するイメージセンサー素子収納用パッケージ
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a package for housing an image sensor element for housing an image sensor element.
【０００２】[0002]
【従来の技術】従来、イメージセンサー素子を収容する
ためのイメージセンサー素子収納用パッケージは、図２
に示すように酸化アルミニウム質焼結体、窒化アルミニ
ウム質焼結体、ムライト質焼結体、炭化珪素質焼結体、
ガラスセラミックス等のセラミックスから成り、その上
面略中央部にイメージセンサー素子１３を搭載するため
の搭載部１１ａ及び該搭載部１１ａ周辺から外周部に導
出する複数のメタライズ配線層１２を有する絶縁基体１
１と、前記絶縁基体１１の外周部に導出したメタライズ
配線層１２に銀ロウ等のロウ材を介して取着される外部
リード端子１４と、蓋体１５とから構成されており、前
記絶縁基体１１の搭載部１１ａに、上面に複数の電極が
形成されたイメージセンサー素子１３を導電性接着部材
１６を介して接着固定するとともに該イメージセンサー
素子１３の電極をボンディングワイヤ１７を介して前記
メタライズ配線層１２に電気的に接続し、しかる後、前
記絶縁基体１１上面にガラス、サファイア等の透光性材
料から成る蓋体１５を樹脂、半田等の封止材を介して接
合させ、絶縁基体１１と蓋体１５とから成る容器内部に
イメージセンサー素子１３を気密に収容することによっ
て製品としてのイメージセンサー装置となる。2. Description of the Related Art Conventionally, an image sensor element housing package for housing an image sensor element is shown in FIG.
As shown in the figure, aluminum oxide sintered body, aluminum nitride sintered body, mullite sintered body, silicon carbide sintered body,
An insulating substrate 1 made of ceramics such as glass ceramic and having a mounting portion 11a for mounting an image sensor element 13 at a substantially central portion of the upper surface thereof and a plurality of metallized wiring layers 12 extending from the periphery of the mounting portion 11a to the outer peripheral portion.
1, an external lead terminal 14 attached to a metallized wiring layer 12 led to the outer peripheral portion of the insulating base 11 via a brazing material such as silver brazing, and a lid 15. An image sensor element 13 having a plurality of electrodes formed on an upper surface thereof is bonded and fixed to a mounting portion 11a of the substrate 11 via a conductive adhesive member 16 and the electrodes of the image sensor element 13 are connected to the metallized wiring via bonding wires 17. After electrically connecting to the layer 12, a lid 15 made of a light-transmitting material such as glass or sapphire is bonded to the upper surface of the insulating base 11 via a sealing material such as resin or solder. The image sensor device 13 as a product is obtained by hermetically housing the image sensor element 13 inside the container including the lid 15 and the lid 15.
【０００３】また、前記イメージセンサー素子１３は、
シリコン等の半導体材料から成る半導体基板上面にイメ
ージセンサー回路を構成するダイオードやトランジスタ
が形成されているとともに半導体基板がこれらのダイオ
ードやトランジスタの電極から電気的に浮いた構造とな
っており、半導体基板が電気的に浮いているとイメージ
センサー素子１３の作動が不安定なものとなるため、通
常、半導体基板の下面をサブストレート電圧と呼ばれる
電圧（０ボルト又は所定のバイアス電圧）に接続するこ
とによりイメージセンサー素子の作動を安定なものとし
ている。[0003] The image sensor element 13 includes:
Diodes and transistors forming an image sensor circuit are formed on the upper surface of a semiconductor substrate made of a semiconductor material such as silicon, and the semiconductor substrate has a structure electrically floating from the electrodes of these diodes and transistors. Since the operation of the image sensor element 13 becomes unstable when is electrically floating, the lower surface of the semiconductor substrate is usually connected to a voltage (0 volt or a predetermined bias voltage) called a substrate voltage. The operation of the image sensor element is stabilized.
【０００４】前記イメージセンサー素子１３を構成する
半導体基板下面をサブストレート電圧に接続するには、
絶縁基体１１の搭載部１１ａに予めメタライズ金属層１
８を設けるとともに該メタライズ金属１８層と前記メタ
ライズ配線層１２の一部とを電気的に接続しておき、し
かる後、前記搭載部１１ａに設けたメタライズ金属層１
８上にイメージセンサー素子１３の下面を半田、銀−エ
ポキシ樹脂等の導電性接着部材１６を介して接着固定す
るとともに前記メタライズ金属層１８に接続されたメタ
ライズ配線層１２を外部のサブストレート電圧に接続す
る方法が採られる。In order to connect the lower surface of the semiconductor substrate constituting the image sensor element 13 to a substrate voltage,
The metallized metal layer 1 is previously mounted on the mounting portion 11a of the insulating base 11.
8 and electrically connect the metallized metal layer 18 and a part of the metallized wiring layer 12 to the metallized metal layer 1 provided on the mounting portion 11a.
The lower surface of the image sensor element 13 is bonded and fixed to the metallized wiring layer 12 via a conductive bonding member 16 made of solder, silver-epoxy resin or the like, and the metallized wiring layer 12 connected to the metallized metal layer 18 is exposed to an external substrate voltage. The connection method is adopted.
【０００５】尚、前記従来のイメージセンサー素子収納
用パッケージは通常、その絶縁基体１１がセラミックグ
リーンシート積層法を採用して製作されており、具体的
には、セラミック原料粉末に適当なバインダー、溶剤等
を添加混合して得た泥漿物を従来周知のドクターブレー
ド法やカレンダーロール法によりシート状のセラミック
グリーンシートとなし、次に前記セラミックグリーンシ
ートに適当な打ち抜き加工を施すとともに該セラミック
グリーンシートの表面にメタライズ配線層１２及びメタ
ライズ金属層１８となる金属ペーストを従来周知のスク
リーン印刷法を採用して所定パターンに印刷塗布し、し
かる後、前記セラミックグリーンシートを複数枚積層
し、これを高温で焼成することによって製作される。In the conventional package for storing an image sensor element, the insulating substrate 11 is usually manufactured by using a ceramic green sheet laminating method. Specifically, a binder and a solvent suitable for a ceramic raw material powder are used. The slurry obtained by adding and mixing the ceramic green sheet is formed into a sheet-like ceramic green sheet by a conventionally known doctor blade method or calendar roll method, and then the ceramic green sheet is subjected to an appropriate punching process. A metal paste to be the metallized wiring layer 12 and the metallized metal layer 18 is printed and applied in a predetermined pattern on the surface by using a conventionally known screen printing method. Thereafter, a plurality of the ceramic green sheets are laminated, and this is laminated at a high temperature. It is manufactured by firing.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、この従
来のイメージセンサー素子収納用パッケージにおいて
は、絶縁基体が複数のセラミックグリーンシートを積層
し、これを焼成することによって製作されており、各セ
ラミックグリーンシートは焼成時の収縮量に差を有して
いることから得られる絶縁基体も前記収縮量の差に起因
して約１００μｍ程度の反りが発生してしまう。そのた
めこの絶縁基体の搭載部にイメージセンサー素子を導電
性接着部材を介して接着固定すると、イメージセンサー
素子が搭載部に傾いて固定され、その結果、イメージセ
ンサー素子と画像情報とが正確に対向せずにイメージセ
ンサー素子における画像情報の電気信号への変換が不正
確なものとなるという欠点を有していた。However, in this conventional package for housing an image sensor element, the insulating base is manufactured by laminating a plurality of ceramic green sheets and firing them. Because of the difference in the amount of shrinkage during baking, the insulating substrate obtained also has a warpage of about 100 μm due to the difference in the amount of shrinkage. Therefore, when the image sensor element is bonded and fixed to the mounting portion of the insulating base via a conductive adhesive member, the image sensor element is fixed to the mounting portion while being inclined, and as a result, the image sensor element and the image information are accurately opposed to each other. However, the conversion of image information into an electric signal in the image sensor element is inaccurate.
【０００７】そこで、上記欠点を解決するために絶縁基
体の搭載部を研削装置を用いて研削することによって平
坦なものとなすことが考えられる。[0007] In order to solve the above-mentioned drawbacks, it is conceivable that the mounting portion of the insulating substrate is ground by using a grinding device to make it flat.
【０００８】しかしながら、絶縁基体の搭載部上面には
メタライズ金属層が被着されており、該搭載部上面を研
削装置を用いて研削すると、前記メタライズ金属層を消
失させてしまうことになり、その結果、イメージセンサ
ー素子を構成する半導体基板をサブストレート電圧に電
気的に接続することができなくなってしまう。However, a metallized metal layer is adhered on the upper surface of the mounting portion of the insulating base, and if the upper surface of the mounting portion is ground using a grinding device, the metallized metal layer is lost. As a result, the semiconductor substrate forming the image sensor element cannot be electrically connected to the substrate voltage.
【０００９】[0009]
【課題を解決するための手段】本発明は、イメージセン
サー素子が搭載される搭載部と、該搭載部周辺に一端が
配設され、イメージセンサー素子の各電極が電気的に接
続される複数個のメタライズ配線層を有する絶縁基体
と、蓋体とから成るイメージセンサー素子収納用パッケ
ージであって、前記絶縁基体は搭載部が研削平坦化され
ているとともに搭載部下方にメタライズ金属層が埋設さ
れており、且つ該メタライズ金属層はその一部がスルー
ホールを介して搭載部に延出していることを特徴とする
ものであり、絶縁基体に設けた搭載部が研削平坦化され
ていることからイメージセンサー素子を搭載部に傾きな
く搭載することができ、また絶縁基体のイメージセンサ
ー素子が搭載される搭載部下方にメタライズ金属層を埋
設するとともにその一部を絶縁基体に設けたスルーホー
ルを介して搭載部に延出させたことから、搭載部を研削
平坦化する際、メタライズ金属層よりスルーホールを介
して延出する延出部の一部は研削除去されるもののメタ
ライズ金属層そのものが研削除去されることはなく、そ
の結果、搭載部に搭載されるイメージセンサー素子をメ
タライズ金属層にスルーホールを介して延出する延出部
を通じて確実に電気的接続させることが可能となる。According to the present invention, there is provided a mounting section on which an image sensor element is mounted, and a plurality of mounting sections each having one end disposed around the mounting section and electrically connecting each electrode of the image sensor element. A package for storing an image sensor element comprising an insulating base having a metallized wiring layer and a lid, wherein the insulating base has a mounting portion ground and flattened and a metallized metal layer buried under the mounting portion. In addition, the metallized metal layer is characterized in that a part thereof extends to the mounting portion via a through hole, and the mounting portion provided on the insulating base is ground and flattened. The sensor element can be mounted on the mounting part without tilt, and a metallized metal layer is buried below the mounting part of the insulating base where the image sensor element is mounted. Part is extended to the mounting part via the through hole provided in the insulating base, so when the mounting part is ground and flattened, a part of the extending part extending from the metallized metal layer via the through hole is Although the metallized metal layer itself is ground and removed, the metallized metal layer itself is not ground and removed, and as a result, the image sensor element mounted on the mounting part is surely electrically powered through the extended part that extends through the through hole to the metallized metal layer. Connection can be established.
【００１０】[0010]
【発明の実施の形態】次に本発明のイメージセンサー素
子収納用パッケージを添付図面に基づき詳細に説明す
る。図１は、本発明の一実施形態を示す断面図であり、
１は絶縁基体、２は蓋体、３はイメージセンサー素子で
あり、前記絶縁基体１と蓋体２とでイメージセンサー素
子３を収容する容器４が構成される。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, a package for storing an image sensor element according to the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a sectional view showing an embodiment of the present invention,
1 is an insulating base, 2 is a lid, and 3 is an image sensor element. The insulating base 1 and the lid 2 constitute a container 4 for housing the image sensor element 3.
【００１１】前記イメージセンサー素子収納用パッケー
ジを構成する絶縁基体１は、その上面中央部にイメージ
センサー素子３が搭載される搭載部１ａを有しており、
該搭載部１ａにはイメージセンサー素子３が半田、銀−
エポキシ樹脂等の導電性接着部材５を介して接着固定さ
れる。The insulating base 1 constituting the package for storing the image sensor element has a mounting portion 1a on which the image sensor element 3 is mounted at the center of the upper surface thereof.
The image sensor element 3 has solder, silver-
It is bonded and fixed via a conductive bonding member 5 such as an epoxy resin.
【００１２】前記絶縁基体１は、酸化アルミニウム質焼
結体や窒化アルミニウム質焼結体、ムライト質焼結体、
炭化珪素質焼結体、ガラスセラミックス等のセラミック
スから成り、例えば酸化アルミニウ質焼結体から成る場
合、酸化アルミニウム、酸化珪素、酸化マグネシウム、
酸化カルシウム等の原料粉末に適当な有機バインダー、
溶剤、可塑剤、分散剤等を添加混合して泥漿物を作ると
ともに該泥漿物を従来周知のドクターブレード法等のシ
ート成形法を採用してシート状のセラミックグリーンシ
ートとなし、しかる後、前記セラミックグリーンシート
に適当な打ち抜き加工を施すとともにこれを複数枚積層
し、約１６００℃の温度で焼成することによって製作さ
れる。The insulating substrate 1 is made of an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body,
Silicon carbide sintered body, made of ceramics such as glass ceramics, for example, when made of aluminum oxide sintered body, aluminum oxide, silicon oxide, magnesium oxide,
Organic binder suitable for raw material powder such as calcium oxide,
A solvent, a plasticizer, a dispersant, etc. are added and mixed to form a slurry, and the slurry is formed into a sheet-like ceramic green sheet by using a conventionally known sheet forming method such as a doctor blade method. The ceramic green sheet is manufactured by performing an appropriate punching process, laminating a plurality of the sheets, and firing at a temperature of about 1600 ° C.
【００１３】また前記絶縁基体１は、その搭載部１ａが
例えば、機械的研削法により反りが５０μｍ以下となる
ように平坦化されており、これによって搭載部１ａにイ
メージセンサー素子３を搭載しても搭載部１ａが平坦で
あることからイメージセンサー素子３が傾いて搭載され
ることはなく、その結果、イメージセンサー素子３を常
に画像情報に正確に対向させることが可能となって、イ
メージセンサー素子３に画像情報の電気信号への変換を
正確に行わせることができる。The mounting portion 1a of the insulating base 1 is flattened by, for example, a mechanical grinding method so that the warp is 50 μm or less. With this, the image sensor element 3 is mounted on the mounting portion 1a. Also, since the mounting portion 1a is flat, the image sensor element 3 is not mounted with an inclination, and as a result, the image sensor element 3 can always always face the image information accurately, and the image sensor element 3 3 can accurately convert the image information into an electric signal.
【００１４】尚、前記絶縁基体１はその搭載部１ａの反
りが５０μｍを越えると、搭載部１ａにイメージセンサ
ー素子３を搭載する際、イメージセンサー素子３が搭載
部１ａの反りに起因して斜めに固定されやすく、イメー
ジセンサー素子３が傾いて搭載されるとイメージセンサ
ー素子３に画像情報を正確に電気信号に変換させること
ができなくなる。従って、前記絶縁基体１はその搭載部
１ａの反りが５０μｍ以下となるように研削平坦化され
ていることが好ましい。If the warpage of the mounting portion 1a of the insulating substrate 1 exceeds 50 μm, when mounting the image sensor element 3 on the mounting portion 1a, the image sensor element 3 is inclined due to the warpage of the mounting portion 1a. When the image sensor element 3 is mounted at an angle, the image sensor element 3 cannot accurately convert image information into an electric signal. Therefore, the insulating base 1 is preferably ground and flattened so that the warpage of the mounting portion 1a is 50 μm or less.
【００１５】更に、前記絶縁基体１は、搭載部１ａ周辺
から外周側面に導出するタングステン、モリブデン、マ
ンガン、銅、銀、金等の金属粉末から成る複数のメタラ
イズ配線層６が被着形成されている。Further, the insulating substrate 1 has a plurality of metallized wiring layers 6 made of metal powder such as tungsten, molybdenum, manganese, copper, silver, and gold, which are led out from the periphery of the mounting portion 1a to the outer peripheral side surface. I have.
【００１６】前記メタライズ配線層６は、容器４内部に
収容されるイメージセンサー素子３の各電極を容器４の
外部に電気的に導出する作用を為し、その搭載部１ａ周
辺部位にはイメージセンサー素子３の各電極がボンディ
ングワイヤー７を介して電気的に接続される。The metallized wiring layer 6 functions to electrically lead each electrode of the image sensor element 3 housed inside the container 4 to the outside of the container 4, and has an image sensor around the mounting portion 1a. Each electrode of the element 3 is electrically connected via a bonding wire 7.
【００１７】前記メタライズ配線層６は、例えばタング
ステン粉末から成る場合、タングステン粉末に適当な有
機バインダー、溶剤を添加混合して得た金属ペーストを
絶縁基体１となるセラミックグリーンシートに従来周知
のスクリーン印刷法を採用して所定パターンに印刷塗布
しておき、これを該セラミックグリーンシートとともに
焼成することによって絶縁基体１の搭載部１ａ周辺から
外周側面にかけて導出するように被着形成される。When the metallized wiring layer 6 is made of, for example, tungsten powder, a metal paste obtained by adding a suitable organic binder and a solvent to the tungsten powder and mixing the same is screen-printed on a ceramic green sheet serving as the insulating substrate 1 by a conventionally well-known technique. A predetermined pattern is printed and applied by employing a method, and the resultant is baked together with the ceramic green sheet to be formed so as to be led out from the periphery of the mounting portion 1a of the insulating base 1 to the outer peripheral side surface.
【００１８】尚、前記メタライズ配線層６は、その露出
する表面にニッケル、金等の耐蝕性に優れ、且つボンデ
ィングワイヤやロウ材との接合性に優れる金属をめっき
法により１乃至２０μｍの厚みに鍍着させておくと、メ
タライズ配線層６が酸化腐蝕するのを有効に防止するこ
とができるとともにメタライズ配線層６とボンディング
ワイヤ７及びメタライズ配線層６と後述する外部リード
端子８との接合を強固、且つ容易なものとすることがで
きる。従って、前記メタライズ配線層６はその露出する
表面にニッケル、金等の耐蝕性に優れ、且つボンディン
グワイヤやロウ材との接合性に優れる金属をめっき法に
より１乃至２０μｍの厚みに鍍着させておくことが好ま
しい。The metallized wiring layer 6 has a thickness of 1 to 20 μm formed by plating a metal having excellent corrosion resistance, such as nickel and gold, and excellent bondability with a bonding wire or a brazing material on the exposed surface. By plating, the metallized wiring layer 6 can be effectively prevented from being oxidized and corroded, and the bonding between the metallized wiring layer 6 and the bonding wire 7 and the bonding between the metallized wiring layer 6 and the external lead terminals 8 described later are firmly strengthened. And it can be made easy. Accordingly, the metallized wiring layer 6 is formed by plating a metal having excellent corrosion resistance, such as nickel and gold, and excellent bonding with a bonding wire or a brazing material to a thickness of 1 to 20 μm on the exposed surface by a plating method. Preferably.
【００１９】また前記メタライズ配線層６の外周側面に
導出した部位には、イメージセンサー素子３の電極を外
部電気回路に接続するための外部リード端子８が銀ロウ
等のロウ材を介して取着されており、該外部リード端子
８を外部電気回路基板の配線導体に電気的に接続するこ
とにより容器４内部に収容されるイメージセンサー素子
３の各電極が外部電気回路に電気的に接続されることと
なる。An external lead terminal 8 for connecting an electrode of the image sensor element 3 to an external electric circuit is attached via a brazing material such as silver brazing to a portion led out to the outer peripheral side surface of the metallized wiring layer 6. Each electrode of the image sensor element 3 housed inside the container 4 is electrically connected to the external electric circuit by electrically connecting the external lead terminal 8 to the wiring conductor of the external electric circuit board. It will be.
【００２０】前記外部リード端子８は、鉄−ニッケル−
コバルト合金や鉄−ニッケル合金等の金属から成り、鉄
−ニッケル−コバルト合金や鉄−ニッケル合金等の金属
から成る薄い板材に従来周知のパンチング加工やエッチ
ング加工を施すことによって、所定の形状に製作され
る。The external lead terminal 8 is made of iron-nickel-
It is made of a metal such as a cobalt alloy or an iron-nickel alloy, and is formed into a predetermined shape by subjecting a thin plate made of a metal such as an iron-nickel-cobalt alloy or an iron-nickel alloy to a conventionally known punching or etching process. Is done.
【００２１】前記外部リード端子８をメタライズ配線層
６に銀ロウ等のロウ材を介して取着するには、前記メタ
ライズ配線層６と外部リード端子８とを間に銀ロウ等の
ロウ材を介して当接させるとともに、これらを還元雰囲
気炉中で約８００〜９００℃の温度に加熱することによ
って前記ロウ材を溶融させ、該溶融したロウ材をメタラ
イズ配線層６と外部リード端子８との間に濡れ広がらせ
た後、該ロウ材を冷却固化する方法が採用される。In order to attach the external lead terminals 8 to the metallized wiring layer 6 via a brazing material such as silver brazing, a brazing material such as silver brazing is interposed between the metallized wiring layer 6 and the external lead terminals 8. The brazing material is melted by heating them to a temperature of about 800 to 900 ° C. in a reducing atmosphere furnace, and the molten brazing material is brought into contact with the metallized wiring layer 6 and the external lead terminals 8. A method is employed in which the brazing material is cooled and solidified after being wet-spread in between.
【００２２】更に、前記外部リード端子８及びロウ材
は、その露出する表面にニッケルや金等の耐蝕性に優れ
る金属をめっき法により１〜２０μｍの厚みに鍍着させ
ておくと、外部リード端子８やろう材が酸化腐食するの
を有効に防止することができる。従って、前記外部リー
ド端子８及びロウ材は、その露出する表面にニッケルや
金等の耐蝕性に優れる金属をめっき法により１〜２０μ
ｍの厚みに鍍着させておくことが好ましい。Further, the external lead terminal 8 and the brazing material are plated with a metal having excellent corrosion resistance, such as nickel or gold, to a thickness of 1 to 20 μm by a plating method. 8 and the brazing material can be effectively prevented from being oxidized and corroded. Therefore, the external lead terminals 8 and the brazing material are coated with a metal having excellent corrosion resistance, such as nickel or gold, by 1 to 20 μm on the exposed surfaces by plating.
It is preferable that the plating is performed to a thickness of m.
【００２３】前記絶縁基体１はまた更に、前記搭載部１
ａ下方にメタライズ金属層９が埋設されており、かつ該
メタライズ金属層９はその一部が絶縁基体１に設けたス
ルーホール１０を介して搭載部１ａに延出している。The insulating substrate 1 further includes the mounting portion 1
The metallized metal layer 9 is buried underneath a, and a part of the metallized metal layer 9 extends to the mounting portion 1a via a through hole 10 provided in the insulating base 1.
【００２４】前記メタライズ金属層９は、イメージセン
サー素子３の半導体基板にサブストレート電圧を供給す
る作用をなし、例えば、メタライズ金属層９をメタライ
ズ配線層６に電気的に接続させておき、該メタライズ金
属層９と電気的に接続するメタライズ配線層６に取着さ
れた外部リード端子８を外部のサブストレート電圧に接
続すれば、外部リード端子８、メタライズ配線層６及び
メタライズ金属層９を介してイメージセンサー素子３の
半導体基板にサブストレート電圧が供給されることとな
る。The metallized metal layer 9 acts to supply a substrate voltage to the semiconductor substrate of the image sensor element 3. For example, the metallized metal layer 9 is electrically connected to the metallized wiring layer 6, When the external lead terminal 8 attached to the metallized wiring layer 6 electrically connected to the metal layer 9 is connected to an external substrate voltage, the external lead terminal 8, the metallized wiring layer 6 and the metallized metal layer 9 are interposed. The substrate voltage is supplied to the semiconductor substrate of the image sensor element 3.
【００２５】前記メタライズ金属層９は、タングステ
ン、モリブデン、マンガン、銅、銀、金、パラジウム等
の金属粉末から成り、例えばタングステン粉末から成る
場合、タングステン粉末に適当な有機バインダー、溶剤
等を添加混合して得た金属ペーストを絶縁基体１となる
セラミックグリーンシートに従来周知のスクリーン印刷
法を採用して所定パターンに印刷塗布しておき、これを
該セラミックグリーンシートとともに焼成することによ
って絶縁基体１の搭載部１ａ下方に埋設される。The metallized metal layer 9 is made of a metal powder such as tungsten, molybdenum, manganese, copper, silver, gold, palladium, etc. For example, when the metallized metal layer 9 is made of tungsten powder, an appropriate organic binder, solvent and the like are added to the tungsten powder and mixed. The metal paste thus obtained is printed and applied in a predetermined pattern on a ceramic green sheet serving as the insulating substrate 1 by employing a conventionally known screen printing method, and is fired together with the ceramic green sheet to form the insulating substrate 1. It is buried under the mounting part 1a.
【００２６】また前記メタライズ金属層９より延出する
延出部は、絶縁基体１と成るセラミックグリーンシート
に適当な打ち抜き加工を施してスルーホール１０を形成
し、該スルーホール１０内にメタライズ金属層９を形成
するのと同じ金属ペーストを充填しておくことによって
形成される。The extending portion extending from the metallized metal layer 9 is formed by appropriately punching a ceramic green sheet serving as the insulating substrate 1 to form a through hole 10. The metallized metal layer is formed in the through hole 10. 9 is formed by filling the same metal paste as that used to form 9.
【００２７】尚、前記メタライズ金属層９は、絶縁基体
１の搭載部１ａ下方に埋設されているので絶縁基体１の
搭載部１ａを研削により平坦化してもメタライズ金属層
９が研削除去されることはない。Since the metallized metal layer 9 is buried under the mounting portion 1a of the insulating base 1, the metallized metal layer 9 is ground and removed even if the mounting portion 1a of the insulating base 1 is flattened by grinding. There is no.
【００２８】また、絶縁基体１の搭載部１ａ下方にメタ
ライズ金属層９を埋設するとともにその一部を絶縁基体
１に設けたスルーホール１０を介して搭載部１ａに延出
させたことから、搭載部１ａを研削平坦化する際、メタ
ライズ金属層９よりスルーホール１０を介して延出する
延出部の一部は研削除去されるもののメタライズ金属層
９そのものは研削除去されることがなく、その結果、搭
載部１ａに搭載されるイメージセンサー素子３をメタラ
イズ金属層９にスルーホール１０を介して延出する延出
部を通じて確実に電気的接続させることが可能となる。Further, since the metallized metal layer 9 is buried under the mounting portion 1a of the insulating base 1 and a part thereof is extended to the mounting portion 1a through a through hole 10 provided in the insulating base 1, the mounting is performed. When the portion 1a is ground and flattened, a part of the extended portion extending from the metallized metal layer 9 through the through hole 10 is ground and removed, but the metallized metal layer 9 itself is not ground and removed. As a result, it is possible to reliably electrically connect the image sensor element 3 mounted on the mounting portion 1a to the metallized metal layer 9 through the extending portion extending through the through hole 10.
【００２９】かくして、本発明のイメージセンサー素子
収納用パッケージによれば、絶縁基体１の搭載部１ａに
イメージセンサー素子３を半田、銀−エポキシ樹脂等の
導電性接着部材５を介して接着固定するとともに該イメ
ージセンサー素子３の下面をメタライズ金属層９に電気
的に接続させ、しかる後、イメージセンサー素子３の各
電極をボンディングワイヤ７を介してメタライズ配線層
６に電気的に接続し、最後に絶縁基体１上面に、ガラ
ス、サファイア、樹脂等の透光性材料から成る蓋体２を
半田、樹脂等の封止材を介して接合させ、絶縁基体１と
蓋体２とから成る容器４内部にイメージセンサー素子３
を気密に封入すれば最終製品としてのイメージセンサー
装置となる。Thus, according to the package for accommodating the image sensor element of the present invention, the image sensor element 3 is bonded and fixed to the mounting portion 1a of the insulating base 1 via the conductive adhesive member 5 such as solder or silver-epoxy resin. At the same time, the lower surface of the image sensor element 3 is electrically connected to the metallized metal layer 9. Thereafter, each electrode of the image sensor element 3 is electrically connected to the metallized wiring layer 6 via the bonding wire 7. A lid 2 made of a light-transmissive material such as glass, sapphire, or resin is joined to the upper surface of the insulating base 1 via a sealing material such as solder or resin. Image sensor element 3
If it is airtightly sealed, it becomes an image sensor device as a final product.
【００３０】[0030]
【発明の効果】本発明のイメージセンサー素子収納用パ
ッケージによれば、絶縁基体に設けたイメージセンサー
素子が搭載される搭載部を研削平坦化させたことから搭
載部にイメージセンサー素子を水平に固定することがで
き、イメージセンサー素子を常に画像情報に正確に対向
させることが可能となって、イメージセンサーに画像情
報の電気信号への変換を正確に行わせることができる。According to the package for storing an image sensor element of the present invention, the mounting section on which the image sensor element provided on the insulating substrate is mounted is ground and flattened, so that the image sensor element is fixed horizontally to the mounting section. This makes it possible to always make the image sensor element accurately face the image information, so that the image sensor can accurately convert the image information into an electric signal.
【００３１】また本発明のイメージセンサー素子収納用
パッケージによれば、絶縁基体のイメージセンサー素子
が搭載される搭載部下方にメタライズ金属層を埋設する
とともにその一部を絶縁基体に設けたスルーホールを介
して搭載部に延出させたことから、搭載部を研削平坦化
する際、メタライズ金属層よりスルーホールを介して延
出する延出部の一部は研削除去されるもののメタライズ
金属層そのものが研削除去されることはなく、その結
果、搭載部に搭載されるイメージセンサー素子をメタラ
イズ金属層にスルーホールを介して延出する延出部を通
じて確実に電気的接続させることが可能となり、これに
よってイメージセンサー素子を構成する半導体基板にサ
ブストレート電圧を確実に供給することができ、イメー
ジセンサー素子を安定に作動させることができる。According to the package for storing an image sensor element of the present invention, a metallized metal layer is buried below the mounting portion of the insulating base on which the image sensor element is mounted, and a through hole in which a part of the metallized metal layer is provided in the insulating base. When the mounting part is ground and flattened, a part of the extending part extending through the through hole from the metallized metal layer is ground and removed, but the metallized metal layer itself is As a result, the image sensor element mounted on the mounting portion can be reliably electrically connected to the metallized metal layer through the extending portion extending through the through-hole, thereby not being removed by grinding. The substrate voltage can be reliably supplied to the semiconductor substrate constituting the image sensor element, and the image sensor element can be used in a stable manner. It can be operated on.
【図１】本発明のイメージセンサー素子収納用パッケー
ジの一実施形態を示す断面図である。FIG. 1 is a cross-sectional view illustrating an embodiment of an image sensor element storage package according to the present invention.
【図２】従来のイメージセンサー素子収納用パッケージ
を示す断面図である。FIG. 2 is a cross-sectional view illustrating a conventional image sensor element storage package.
１・・・・・・絶縁基体 １ａ・・・・・搭載部 ２・・・・・・蓋体 ３・・・・・・イメージセンサー素子 ４・・・・・・容器 ５・・・・・・導電性接着部材 ６・・・・・・メタライズ配線層 ９・・・・・・メタライズ金属層 １０・・・・・・スルーホール DESCRIPTION OF SYMBOLS 1 ... Insulating base 1a ... Mounting part 2 ... Lid 3 ... Image sensor element 4 ... Container 5 ... -Conductive adhesive member 6 ... Metallized wiring layer 9 Metallized metal layer 10 ... Through-hole
Claims (1)
と、該搭載部周辺に一端が配設され、イメージセンサー
素子の各電極が電気的に接続される複数個のメタライズ
配線層を有する絶縁基体と、蓋体とから成るイメージセ
ンサー素子収納用パッケージであって、前記絶縁基体は
搭載部が研削平坦化されているとともに搭載部下方にメ
タライズ金属層が埋設されており、且つ該メタライズ金
属層はその一部がスルーホールを介して搭載部に延出し
ていることを特徴とするイメージセンサー素子収納用パ
ッケージ。1. An insulating substrate having a mounting portion on which an image sensor element is mounted, and a plurality of metallized wiring layers, one end of which is disposed around the mounting portion, and each electrode of the image sensor element is electrically connected. And an image sensor element storage package comprising a lid, wherein the insulating base has a mounting portion ground and flattened, and a metallized metal layer is buried below the mounting portion, and the metallized metal layer is A package for storing an image sensor element, a part of which extends to a mounting portion through a through hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8256674A JPH10107240A (en) | 1996-09-27 | 1996-09-27 | Package for containing image sensor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8256674A JPH10107240A (en) | 1996-09-27 | 1996-09-27 | Package for containing image sensor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10107240A true JPH10107240A (en) | 1998-04-24 |
Family
ID=17295901
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8256674A Pending JPH10107240A (en) | 1996-09-27 | 1996-09-27 | Package for containing image sensor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10107240A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006296865A (en) * | 2005-04-22 | 2006-11-02 | Hamamatsu Photonics Kk | Photodetection unit, photodetector, and x-ray tomographic imaging apparatus |
| WO2010004860A1 (en) | 2008-07-09 | 2010-01-14 | エヌイーシー ショット コンポーネンツ株式会社 | Packaging device and base member for package |
| US9025061B2 (en) | 2010-04-01 | 2015-05-05 | Conti Temic Microelectronic Gmbh | Device having an optical module and a supporting plate |
-
1996
- 1996-09-27 JP JP8256674A patent/JPH10107240A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006296865A (en) * | 2005-04-22 | 2006-11-02 | Hamamatsu Photonics Kk | Photodetection unit, photodetector, and x-ray tomographic imaging apparatus |
| US8000437B2 (en) | 2005-04-22 | 2011-08-16 | Hamamatsu Photonics K.K. | Photodetection unit, photodetector, and x-ray computed tomography apparatus |
| WO2010004860A1 (en) | 2008-07-09 | 2010-01-14 | エヌイーシー ショット コンポーネンツ株式会社 | Packaging device and base member for package |
| US8884165B2 (en) | 2008-07-09 | 2014-11-11 | Nec Schott Components Corporation | Packaging device and base member for packaging |
| US9025061B2 (en) | 2010-04-01 | 2015-05-05 | Conti Temic Microelectronic Gmbh | Device having an optical module and a supporting plate |
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