JP2534434B2 - 耐酸化性化合物およびその製造方法 - Google Patents
耐酸化性化合物およびその製造方法Info
- Publication number
- JP2534434B2 JP2534434B2 JP5073947A JP7394793A JP2534434B2 JP 2534434 B2 JP2534434 B2 JP 2534434B2 JP 5073947 A JP5073947 A JP 5073947A JP 7394793 A JP7394793 A JP 7394793A JP 2534434 B2 JP2534434 B2 JP 2534434B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- compound
- transition element
- copper
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H10W20/4421—
-
- H10D64/0112—
-
- H10W20/031—
-
- H10W20/4424—
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US87666992A | 1992-04-30 | 1992-04-30 | |
| US876669 | 1992-04-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0621056A JPH0621056A (ja) | 1994-01-28 |
| JP2534434B2 true JP2534434B2 (ja) | 1996-09-18 |
Family
ID=25368329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5073947A Expired - Fee Related JP2534434B2 (ja) | 1992-04-30 | 1993-03-31 | 耐酸化性化合物およびその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| EP (1) | EP0567867A2 (index.php) |
| JP (1) | JP2534434B2 (index.php) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6575165B1 (en) * | 2000-08-03 | 2003-06-10 | 3M Innovative Properties Company | Apparatus and method for breathing apparatus component coupling |
| US6703308B1 (en) | 2001-11-26 | 2004-03-09 | Advanced Micro Devices, Inc. | Method of inserting alloy elements to reduce copper diffusion and bulk diffusion |
| US7696092B2 (en) | 2001-11-26 | 2010-04-13 | Globalfoundries Inc. | Method of using ternary copper alloy to obtain a low resistance and large grain size interconnect |
| US6835655B1 (en) | 2001-11-26 | 2004-12-28 | Advanced Micro Devices, Inc. | Method of implanting copper barrier material to improve electrical performance |
| US6703307B2 (en) | 2001-11-26 | 2004-03-09 | Advanced Micro Devices, Inc. | Method of implantation after copper seed deposition |
| US6861349B1 (en) | 2002-05-15 | 2005-03-01 | Advanced Micro Devices, Inc. | Method of forming an adhesion layer with an element reactive with a barrier layer |
| US7169706B2 (en) | 2003-10-16 | 2007-01-30 | Advanced Micro Devices, Inc. | Method of using an adhesion precursor layer for chemical vapor deposition (CVD) copper deposition |
| CN112342422A (zh) * | 2020-10-27 | 2021-02-09 | 湖北新蓝天新材料股份有限公司 | 一种铜硅合金材料及其制备方法和应用 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2511289B2 (ja) * | 1988-03-30 | 1996-06-26 | 株式会社日立製作所 | 半導体装置 |
| EP0769808B1 (en) * | 1990-08-01 | 2001-11-28 | International Business Machines Corporation | Wet etching process with high selectivity between Cu and Cu3Ge |
| US5130274A (en) * | 1991-04-05 | 1992-07-14 | International Business Machines Corporation | Copper alloy metallurgies for VLSI interconnection structures |
| JP3220760B2 (ja) * | 1992-03-19 | 2001-10-22 | 株式会社日立製作所 | 半導体装置 |
-
1993
- 1993-03-31 JP JP5073947A patent/JP2534434B2/ja not_active Expired - Fee Related
- 1993-04-16 EP EP93106223A patent/EP0567867A2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| EP0567867A3 (index.php) | 1994-03-09 |
| JPH0621056A (ja) | 1994-01-28 |
| EP0567867A2 (en) | 1993-11-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |