JP2532490B2 - Method for manufacturing resin-sealed semiconductor device - Google Patents

Method for manufacturing resin-sealed semiconductor device

Info

Publication number
JP2532490B2
JP2532490B2 JP62187188A JP18718887A JP2532490B2 JP 2532490 B2 JP2532490 B2 JP 2532490B2 JP 62187188 A JP62187188 A JP 62187188A JP 18718887 A JP18718887 A JP 18718887A JP 2532490 B2 JP2532490 B2 JP 2532490B2
Authority
JP
Japan
Prior art keywords
resin
lead frame
cavity
thin layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62187188A
Other languages
Japanese (ja)
Other versions
JPS6430237A (en
Inventor
裕 居相
年国 宮本
重樹 犬丸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP62187188A priority Critical patent/JP2532490B2/en
Publication of JPS6430237A publication Critical patent/JPS6430237A/en
Application granted granted Critical
Publication of JP2532490B2 publication Critical patent/JP2532490B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、樹脂封止形半導体装置の製造方法に関し、
特に樹脂封止時に、樹脂の薄層(通常バリなどと呼ばれ
る)の発生を無理に押さえようとせず、発生した薄層を
効率よく除去する方法に関するものである。
Description: TECHNICAL FIELD The present invention relates to a method for manufacturing a resin-sealed semiconductor device,
In particular, the present invention relates to a method for efficiently removing a thin layer of resin (usually called a burr) when the resin is sealed without forcibly suppressing the generation of the thin layer.

従来の技術 第4図,第5図に従来の樹脂封止形半導体装置の製造
方法を示す。
2. Description of the Related Art FIGS. 4 and 5 show a conventional method for manufacturing a resin-sealed semiconductor device.

第4図,第5図において、1,2はそれぞれ上下の金
型、3はこれらの金型1,2間に形成される空洞部、4は
金型1,2間に挟持されるリードフレーム、4aはリードフ
レーム4内にくし形に形成されている複数のリード部4b
を結ぶタイバー、5は上記空洞部3内に位置するリード
フレーム4上に溶着された半導体チップである。
In FIGS. 4 and 5, 1 and 2 are upper and lower molds, 3 is a cavity formed between these molds 1 and 2, and 4 is a lead frame sandwiched between the molds 1 and 2. , 4a are a plurality of lead portions 4b formed in the lead frame 4 in a comb shape.
A tie bar 5 connecting the two is a semiconductor chip welded onto the lead frame 4 located in the cavity 3.

上記構成において、上下の金型1,2間にリードフレー
ム4を挟持し、この状態で空洞部3内に溶融樹脂を注入
すると、樹脂が空洞部3内に充填される。この樹脂が冷
却固化した後、リードフレーム4を金型1,2から取出す
と、第5図に示すように、チップ5を保護するパッケー
ジ6が形成される。
In the above structure, when the lead frame 4 is sandwiched between the upper and lower molds 1 and the molten resin is injected into the cavity 3 in this state, the resin is filled in the cavity 3. After the resin is cooled and solidified, the lead frame 4 is taken out from the molds 1 and 2, and a package 6 for protecting the chip 5 is formed as shown in FIG.

発明が解決しようとする問題点 ところが溶融樹脂の注入時に金型1,2とリードフレー
ム4との間の薄い隙間にも樹脂が流れ込む。このため、
冷却固化後リードフレーム4を金型1,2から取外すと、
第5図に示すようにリードフレーム4のリード4b及びタ
イバー4aの表面に、いわゆる、バリと呼ばれる樹脂の薄
層7が付着する。このため、後工程でこの薄層7を除去
する必要があり、それだめ作業工程が多くなるという問
題があった。特に第4図,第5図に示す従来例では、薄
層7がタイバー4aを越える位置にまで達するため、薄層
7の除去作業は非常に煩雑になる。
Problems to be Solved by the Invention However, when the molten resin is injected, the resin also flows into the thin gap between the molds 1 and 2 and the lead frame 4. For this reason,
When the lead frame 4 is removed from the molds 1 and 2 after cooling and solidification,
As shown in FIG. 5, a thin layer 7 of resin called a burr is attached to the surfaces of the leads 4b and the tie bars 4a of the lead frame 4. For this reason, it is necessary to remove the thin layer 7 in a later step, and there is a problem that the number of additional work steps increases. Particularly, in the conventional example shown in FIGS. 4 and 5, since the thin layer 7 reaches a position beyond the tie bar 4a, the work of removing the thin layer 7 becomes very complicated.

一方このような薄層7の発生を抑えるためには、金型
の精度を極端に高くする必要があり、金型などの設備費
用が高価になるという欠点がある。
On the other hand, in order to suppress the generation of such a thin layer 7, it is necessary to make the precision of the mold extremely high, and there is a drawback that the facility cost of the mold and the like becomes expensive.

本発明は、このような従来の問題を解決する樹脂封止
形半導体装置の製造方法を提供することを目的とする。
It is an object of the present invention to provide a method of manufacturing a resin-sealed semiconductor device that solves such conventional problems.

問題点を解決するための手段 この目的を達成するために本発明は、金型に2つの突
起を形成し、これらの突起をリードフレームのタイバー
と樹脂封止体の形成されるべき部位の近傍のリードフレ
ーム上にそれぞれ押しつけることによって当接された上
下金型の隙間から流れ出す樹脂の流れをタイバー付近で
阻止し、また、後工程であるリードの折り曲げ加工時
に、リード自身の折り曲げを利用してリード表面に付着
した樹脂の薄層を剥離するようにしものである。
Means for Solving the Problems In order to achieve this object, the present invention forms two protrusions on a mold, and these protrusions are provided in the vicinity of the tie bar of the lead frame and the portion where the resin sealing body is to be formed. The resin flow that flows out from the gap between the upper and lower molds that are abutted by being pressed against each of the lead frames is blocked near the tie bars. The thin layer of resin adhering to the lead surface is peeled off.

作用 このようにすれば、高価な設備を必要とせず、しかも
薄層除去のための特別な工程を必要とせずに薄層を除去
することができる。
Function In this way, the thin layer can be removed without requiring expensive equipment and without requiring a special step for removing the thin layer.

実施例 第1図〜第3図は、本発明実施例の工程順の説明図で
あり、各図において、第4図,第5図の従来例と実質的
に同一機能をもつ部分には同一符号を付して説明を省略
し、従来例と異なる部分に着目して説明する。第1図に
示すように、上金型1の下面には幅約0.2mm程度の第1,
第2の突起1a,1bが設けられており、第1の突起1aはタ
イバー4aの端部に押し当てられ、第2の突起1bは空洞部
3のすぐ近傍のリードフレーム4の表面に押し当てられ
る。
Embodiment FIG. 1 to FIG. 3 are explanatory views in the order of steps of an embodiment of the present invention, and in each drawing, parts having substantially the same functions as those of the conventional example of FIG. 4 and FIG. The description is omitted by giving the reference numerals and omitting the description, focusing on the part different from the conventional example. As shown in FIG. 1, the lower surface of the upper die 1 has a width of about 0.2 mm.
The second protrusions 1a and 1b are provided, the first protrusion 1a is pressed against the end of the tie bar 4a, and the second protrusion 1b is pressed against the surface of the lead frame 4 in the immediate vicinity of the cavity 3. To be

この状態で空洞部3に溶融樹脂を注入すると、空洞部
3内に充填された樹脂によって半導体チップ5を保護す
る樹脂封止体であるパッケージ6が形成される。この
時、溶融樹脂の一部が金型1とリードフレーム4との間
の隙間に侵入する。第1,第2の突起1a,1bはタイバー4a
の端部と空洞部3の近傍に押し当てられ、一部はリード
フレーム4内に食い込むこともあるが、通常使用される
金型の精度及び製造機械の能力の関係から完全に食い込
んでしまう訳ではない。このため、空洞部3と第2の突
起1bの間はもとより第1の突起1aと第2の突起1b間にも
樹脂が侵入し、薄層を形成する。しかしながら、この薄
層は突起1aから外へはもれない上、突起1bによってパッ
ケージ6から殆ど遮断される。すなわち樹脂が冷却固化
した後に金型1,2からリードフレーム4を取出すと、各
リード4b上に第2図に示すように第1,第2の突起1a,1b
によって遮断された2種の薄層7a,7bが残ることにな
る。以上のようにしてパッケージ6を形成した後、タイ
バー4aが打抜き加工によって取り除かれ、更に各リード
4bが第3図a〜cに示されるように折り曲げ加工され
る。
When molten resin is injected into the cavity 3 in this state, the package 6 which is a resin sealing body that protects the semiconductor chip 5 is formed by the resin filled in the cavity 3. At this time, part of the molten resin enters the gap between the mold 1 and the lead frame 4. The first and second protrusions 1a and 1b are tie bars 4a
There is a case where it is pressed against the end of the mold and the vicinity of the cavity 3 and a part of it bites into the lead frame 4, but it completely bites due to the relationship between the precision of the mold and the capability of the manufacturing machine that are normally used. is not. Therefore, the resin penetrates not only between the cavity 3 and the second protrusion 1b but also between the first protrusion 1a and the second protrusion 1b to form a thin layer. However, this thin layer does not leak out from the protrusion 1a, and is almost shielded from the package 6 by the protrusion 1b. That is, when the lead frame 4 is taken out from the molds 1 and 2 after the resin is cooled and solidified, the first and second protrusions 1a and 1b are formed on the leads 4b as shown in FIG.
The two types of thin layers 7a and 7b that are blocked by this will remain. After the package 6 is formed as described above, the tie bar 4a is punched out and each lead is further removed.
4b is bent as shown in FIGS.

この折り曲げ加工時に、リード4bが折り曲げられる
と、パッケージ6とは分離された薄層7aはリード4bの折
り曲げに応じて第3図bに示すように自然に剥離され
る。このようにして薄層7aは特別な工程を必要とせずに
除去される。
When the lead 4b is bent during this bending process, the thin layer 7a separated from the package 6 is naturally peeled off as shown in FIG. 3b according to the bending of the lead 4b. In this way, the thin layer 7a is removed without any special steps.

なお、突起1a,1bは上下両方の金型に設けてもよい。 The protrusions 1a and 1b may be provided on both upper and lower molds.

発明の効果 以上のように本発明によれば、特別な工程を必要とせ
ず、また高価な金型や設備機械を必要とせずに、パッケ
ージ形成時の樹脂の薄層(バリ)を簡単にしかも確実に
除去することができる。
EFFECTS OF THE INVENTION As described above, according to the present invention, a thin resin layer (burr) can be easily formed at the time of forming a package without requiring a special process and without requiring an expensive mold or equipment. It can be reliably removed.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の一実施例に用いた金型部分の断面図、
第2図は同実施例で得られたリードフレームの要部の斜
視図、第3図a,b,cは同実施例のリード折り曲げ加工を
説明するための工程順側面図、第4図,第5図は従来例
の断面図及び要部斜視図である。 1……上金型、2……下金型、2a……第1の突起、2b…
…第2の突起、3……空洞部、4……リードフレーム、
4a……タイバー、4b……リード、5……半導体チップ、
6……パッケージ、7,7a,7b……薄層。
FIG. 1 is a sectional view of a mold part used in one embodiment of the present invention,
2 is a perspective view of a main part of the lead frame obtained in the same embodiment, and FIGS. 3a, 3b, 3c are side views in order of steps for explaining the lead bending process of the same embodiment, FIG. FIG. 5 is a cross-sectional view and a perspective view of a main part of a conventional example. 1 ... Upper mold, 2 ... Lower mold, 2a ... First protrusion, 2b ...
... second protrusion, 3 ... cavity, 4 ... lead frame,
4a ... tie bar, 4b ... lead, 5 ... semiconductor chip,
6 ... Package, 7, 7a, 7b ... Thin layer.

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】上下一対の金型で形成される空洞部に半導
体チップが位置するようにリードフレームを配置し、前
記金型に形成した第1,第2の突起を前記リードフレーム
のタイバーと前記空洞部の近傍にそれぞれ押し当てて、
前記リードフレームを挟持し、前記空洞部に樹脂を注入
して樹脂封止体を形成し、前記第1及び第2の突起間に
位置するリードフレーム上に残存する樹脂の薄層をリー
ドの折り曲げ加工によって剥離除去することを特徴とす
る樹脂封止形半導体装置の製造方法。
1. A lead frame is arranged so that a semiconductor chip is positioned in a cavity formed by a pair of upper and lower molds, and first and second protrusions formed on the mold are used as tie bars of the lead frame. Pressing in the vicinity of the cavity,
The lead frame is sandwiched, resin is injected into the cavity to form a resin sealing body, and a thin layer of resin remaining on the lead frame located between the first and second protrusions is bent into a lead. A method for manufacturing a resin-encapsulated semiconductor device, which comprises peeling and removing by processing.
JP62187188A 1987-07-27 1987-07-27 Method for manufacturing resin-sealed semiconductor device Expired - Lifetime JP2532490B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62187188A JP2532490B2 (en) 1987-07-27 1987-07-27 Method for manufacturing resin-sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62187188A JP2532490B2 (en) 1987-07-27 1987-07-27 Method for manufacturing resin-sealed semiconductor device

Publications (2)

Publication Number Publication Date
JPS6430237A JPS6430237A (en) 1989-02-01
JP2532490B2 true JP2532490B2 (en) 1996-09-11

Family

ID=16201647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62187188A Expired - Lifetime JP2532490B2 (en) 1987-07-27 1987-07-27 Method for manufacturing resin-sealed semiconductor device

Country Status (1)

Country Link
JP (1) JP2532490B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60175079A (en) * 1984-02-21 1985-09-09 株式会社ナムコ Driver using curved shaft
JP5755186B2 (en) * 2012-06-25 2015-07-29 三菱電機株式会社 Semiconductor device manufacturing method and semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5943090B2 (en) * 1979-06-22 1984-10-19 三菱電機株式会社 Molding equipment for resin-encapsulated semiconductor devices
JPS63314841A (en) * 1987-06-17 1988-12-22 Nec Yamagata Ltd Metal mold for resin seal of semiconductor device

Also Published As

Publication number Publication date
JPS6430237A (en) 1989-02-01

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