JPS63314841A - Metal mold for resin seal of semiconductor device - Google Patents

Metal mold for resin seal of semiconductor device

Info

Publication number
JPS63314841A
JPS63314841A JP15184387A JP15184387A JPS63314841A JP S63314841 A JPS63314841 A JP S63314841A JP 15184387 A JP15184387 A JP 15184387A JP 15184387 A JP15184387 A JP 15184387A JP S63314841 A JPS63314841 A JP S63314841A
Authority
JP
Japan
Prior art keywords
resin
lead frame
mold
groove
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15184387A
Other languages
Japanese (ja)
Inventor
Takeshi Nito
仁藤 剛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Yamagata Ltd
Original Assignee
NEC Yamagata Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Yamagata Ltd filed Critical NEC Yamagata Ltd
Priority to JP15184387A priority Critical patent/JPS63314841A/en
Publication of JPS63314841A publication Critical patent/JPS63314841A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/14Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
    • B29C45/14639Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
    • B29C45/14655Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)

Abstract

PURPOSE:To prevent formation of resin at the tip part of a lead frame from a groove, by forming at least one groove parallel to and neighboring the outer peripheral side of a cavity in which resin is injected on the surface of a metal mold. CONSTITUTION:In a metal mold 1, a groove 8 is arranged at the part against which a lead frame 3 abuts. When a resin thin film begin to be formed on the boudary surface between the metal mold 1 clamping the lead frame 3 and a surface 6, the groove 8 is filled with resin 5, and the thin film is interrupted at a position of the groove 8. As the result, unnecessary resin burr can be prevented from generating on the lead frame.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は樹脂封止型半導体装置の組立に使用する樹脂封
止用金型に関し、特に、トランスファ成形法、又はイン
ジェクシコン成形法に用いられる樹脂封止用金型(以下
単に金型という)に関する。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a mold for resin encapsulation used in the assembly of resin-encapsulated semiconductor devices, and in particular, to a mold used for transfer molding or injecticon molding. The present invention relates to a mold for resin sealing (hereinafter simply referred to as a mold).

〔従来の技術〕[Conventional technology]

従来の樹脂封止方法によれば、半導体素子が搭載された
リードフレームを、プレス機に固定された上金型と下金
型の間に高圧クランプし、搭載された半導体素子の位置
に対応する金型のキャビティに、樹脂を射出注入し、半
導体素子を保&する樹脂部を形成するものである。
According to the conventional resin encapsulation method, a lead frame with a semiconductor element mounted thereon is clamped under high pressure between an upper mold and a lower mold fixed to a press machine, and the lead frame is clamped under high pressure to correspond to the position of the mounted semiconductor element. A resin is injected into a mold cavity to form a resin part that holds the semiconductor element.

第6図は、従来の金型1を用いて半導体素子2が搭載さ
れたリードフレーム3をクランプしている状態の部分断
面図である。第7図(a) 、 (b)は、この金型1
を用いてキャビティ4に樹脂5を射出注入している途中
の状態およびキャビティ4に樹脂5が完全に充填した状
態の部分断面図である。この場合は、リードフレーム3
をクランプしている金型面6とリードフレーム3の界面
に、樹脂5の薄膜7が流れ出しリードフレーム3の先ま
で長く形成された状態となシ、第7図(c)の部分正面
図に従来の金型1によって、樹脂封止を完了した半導体
装置が得られる。
FIG. 6 is a partial cross-sectional view of a conventional mold 1 used to clamp a lead frame 3 on which a semiconductor element 2 is mounted. Figures 7(a) and (b) show this mold 1.
FIG. 2 is a partial cross-sectional view of a state in which resin 5 is being injected into cavity 4 using the method, and a state in which resin 5 is completely filled into cavity 4. FIG. In this case, lead frame 3
A thin film 7 of the resin 5 flows out at the interface between the mold surface 6 that clamps the lead frame 3 and extends to the tip of the lead frame 3, as shown in the partial front view of FIG. 7(c). With the conventional mold 1, a semiconductor device that has been completely resin-sealed can be obtained.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

このように従来の金型」においては、リードフレーム3
をクランプする面が凹凸のない平滑な面であったため、
リードフレームをクランプする圧力が不足したり、樹脂
を射出する圧力が高過ぎたシ、また上金型と下金型のク
ランプする面の互の平行度が不均一な場合などに、キャ
ビティ4に充填された樹脂5が、リードフレームをクラ
ンプしている金型の面とリードフレームの界面に浸透し
、数ミクロンから数十ミクロンの厚さの樹脂の薄膜7を
リードフレーム3の上に形成する。
In this way, in the conventional mold, the lead frame 3
Since the surface to be clamped was smooth with no unevenness,
If the pressure to clamp the lead frame is insufficient, the pressure to inject the resin is too high, or the parallelism of the clamping surfaces of the upper and lower molds is uneven, etc. The filled resin 5 permeates the interface between the lead frame and the surface of the mold that clamps the lead frame, forming a thin resin film 7 with a thickness of several microns to several tens of microns on the lead frame 3. .

この半導体素子の樹脂封止が終了して、樹脂封止済半導
体装置を金型1から取り出した後、樹脂の薄膜7が半導
体装置の外部引き出しリード線上に付着した状態で残っ
てしまう。この樹脂薄膜7は、通常、薄パリ、又はフラ
ッシュなどと呼ばれているもので、外部引き出しリード
線に付着している長さが外部引き出しリード線の方向に
、一定の長さ以上に長い場合は半導体装置の外観を損っ
たシ、外部引き出しリード線の半田付は性を阻害するな
ど゛の不具合が発生する為、樹脂薄膜が長い場合には、
これを除去する必要が生ずるという欠点があった。
After the resin sealing of the semiconductor element is completed and the resin-sealed semiconductor device is taken out from the mold 1, the thin resin film 7 remains attached to the external lead wire of the semiconductor device. This resin thin film 7 is usually called thin film or flash, and if the length attached to the external lead wire is longer than a certain length in the direction of the external lead wire. If the resin thin film is long, it may cause problems such as damaging the appearance of the semiconductor device and inhibiting soldering of external lead wires.
This has the disadvantage that it becomes necessary to remove it.

本発明の目的は、このような欠点を除き、樹脂薄膜を発
生し難くして薄膜の除去を不要とした半導体装置の樹脂
封止小金型を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a resin-sealed small mold for a semiconductor device that eliminates the above-mentioned drawbacks, makes it difficult to form a resin thin film, and eliminates the need to remove the thin film.

〔問題点を解決するための手段〕[Means for solving problems]

本発明の半導体装置の樹脂封止用金型の構成は、リード
フレームをクランプする一対の金型面上に、樹脂の注入
されるキャビティ部の外周辺と平行に、かつこの外周辺
に近接して少くとも1本の溝部を設けたことにより、こ
の溝部から先のリードフレーム上に樹脂薄膜が形成され
ないようにしたことを特徴とする。
The structure of the mold for resin-sealing a semiconductor device of the present invention is such that a pair of mold surfaces for clamping a lead frame are arranged parallel to and close to the outer periphery of a cavity portion into which resin is injected. By providing at least one groove, a thin resin film is prevented from being formed on the lead frame beyond this groove.

〔実施例〕〔Example〕

次に本発明を図面によシ詳細に説明する。 Next, the present invention will be explained in detail with reference to the drawings.

第1図(a) 、 (b)は本発明の一実施例の金型1
を使用してキャビティ4に樹脂を射出注入している途中
およびそのキャビティ4に樹脂5を完全に充填した後の
各状態を示す部分拡大断面図である。
FIGS. 1(a) and 1(b) show a mold 1 according to an embodiment of the present invention.
FIG. 4 is a partially enlarged cross-sectional view showing each state during injection and injection of resin into the cavity 4 using the resin and after the cavity 4 is completely filled with the resin 5.

本実施例において、金型lは、リードフレーム3に当る
部分に溝8が設けられている。この+7−ドフレーム子
をクランプしている金型1と面6とリードフレーム3と
の界面に樹脂薄膜7を形成し始峠たが、従来の金型で形
成されていた長い樹脂薄膜7に相轡する量の樹脂5が溝
8に充填され、溝8の位置で薄膜7が止まった状態とな
っている。
In this embodiment, the mold l is provided with a groove 8 in a portion that corresponds to the lead frame 3. Initially, a resin thin film 7 was formed at the interface between the mold 1, surface 6, and lead frame 3 that clamps this +7-deframe element, but the long resin film 7 formed with the conventional mold was The grooves 8 are filled with matching amounts of the resin 5, and the thin film 7 is stopped at the grooves 8.

この金型1によれば、第1図(c)のよ5に、樹脂封止
を完了しても樹脂薄膜7のない半導体装置が得られる。
According to this mold 1, a semiconductor device without the resin thin film 7 even after resin sealing is completed, as shown in FIG. 1(c).

第2図は本発明の第2の実施例の金型の部分域面図であ
る。本実施例は、互いに反対の方向に外部引き出しリー
ド線を有する半導体装置に適用するもので、キャビティ
40両側に溝8,8′を有す ・るものである。
FIG. 2 is a partial cross-sectional view of a mold according to a second embodiment of the present invention. This embodiment is applied to a semiconductor device having external lead wires in opposite directions, and has grooves 8 and 8' on both sides of the cavity 40.

第3図、第4図は本発明の第3.第4の実施例の部分底
面図で、四つの方向に外部引き出しリード線を有す透半
導体装置に適用され、四方向に溝8.8′を備えている
。第5、図は本発明の第5の実施例の部分底面図である
。リードフレーム3をクランプする面6に設ける溝8.
8”が2本設けられた場合である。1つの方向の外部引
き出しリード線に対して、1本の隣で樹脂薄JIli7
の形成を溝の位置におさえる機能を有するが、本実施例
のように必要に応じて2本以上設けてもよい。
FIGS. 3 and 4 show the third embodiment of the present invention. Partial bottom view of the fourth embodiment, applied to a transparent semiconductor device with external lead wires in four directions, and provided with grooves 8,8' in four directions. Figure 5 is a partial bottom view of the fifth embodiment of the present invention. A groove 8 provided in the surface 6 for clamping the lead frame 3.
This is a case where two 8" wires are provided.For an external lead wire in one direction, a thin resin JIli7 is placed next to one lead wire.
Although it has the function of suppressing the formation of the groove at the groove position, two or more grooves may be provided as necessary as in this embodiment.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明によれば、樹脂封止時の樹
脂薄膜が発生した場合に?いても、常にリードフレーム
をクランプする面に設けた溝の位置以下に樹脂薄膜が形
成されることを抑えることが可能となるので1.リード
フレーム上の樹脂薄膜を除去する必要がないという効果
がある。
As explained above, according to the present invention, what happens when a thin resin film occurs during resin sealing? Even if the lead frame is clamped, it is possible to always prevent the resin thin film from being formed below the position of the groove provided on the surface where the lead frame is clamped.1. This has the advantage that there is no need to remove the resin thin film on the lead frame.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(a) 、 (b)は本発明の一実施例の金型を
使用してキャビティに樹脂を射出8注入している途中お
よびそのキャビティに樹脂を完、全に充填した後の状態
を示す部分拡大断面図、第1図(c)は本実施例の金型
で形成された半導体装置の部分正面図、第2図、第3図
、第4図、第5図は本発明の第2゜第3.第4および第
5の2実施例の金−の部分底面図、第6図は従来の金型
の一例によプ半導体装置樹脂を射出注入している途中お
よびそのキャビティに樹脂が完全に充積した後の状態を
示す部分拡大断面図である。 1・・・・・・金型、2・・・・・・半導体素子、3・
旧・・リードフレーム、4・・・・・・キャビティ、5
・旧・・樹fJk 、6 e6′・・・・・・リードフ
レームをクランプする金型面、7II又
Figures 1 (a) and (b) show the state during injection of resin into the cavity using a mold according to an embodiment of the present invention, and after the cavity is completely filled with resin. FIG. 1(c) is a partial front view of a semiconductor device formed using the mold of this embodiment, and FIGS. 2nd゜3rd. FIG. 6 is a partial bottom view of the metal mold of the fourth and fifth embodiments, and FIG. 6 shows an example of a conventional mold. During the injection and injection of semiconductor device resin, the resin is completely filled in the cavity. FIG. 1...Mold, 2...Semiconductor element, 3.
Old... Lead frame, 4... Cavity, 5
・Old... Tree fJk, 6 e6'... Mold surface for clamping the lead frame, 7II or

Claims (1)

【特許請求の範囲】[Claims] リードフレームをクランプする一対の金型面上に、樹脂
の注入されるキャビティ部の外周辺と平行に、かつこの
外周辺に近接して少くとも1本の溝部を設けたことによ
り、この溝部から先のリードフレーム上に樹脂薄膜が形
成されないようにしたことを特徴とする半導体装置の樹
脂封止用金型。
At least one groove is provided on the pair of mold surfaces for clamping the lead frame, parallel to and close to the outer periphery of the cavity into which the resin is injected, so that the resin can be injected from this groove. A mold for resin sealing a semiconductor device, characterized in that a thin resin film is not formed on the lead frame.
JP15184387A 1987-06-17 1987-06-17 Metal mold for resin seal of semiconductor device Pending JPS63314841A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15184387A JPS63314841A (en) 1987-06-17 1987-06-17 Metal mold for resin seal of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15184387A JPS63314841A (en) 1987-06-17 1987-06-17 Metal mold for resin seal of semiconductor device

Publications (1)

Publication Number Publication Date
JPS63314841A true JPS63314841A (en) 1988-12-22

Family

ID=15527496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15184387A Pending JPS63314841A (en) 1987-06-17 1987-06-17 Metal mold for resin seal of semiconductor device

Country Status (1)

Country Link
JP (1) JPS63314841A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6430237A (en) * 1987-07-27 1989-02-01 Matsushita Electronics Corp Manufacture of resin-sealed semiconductor device
CN114557145A (en) * 2019-09-30 2022-05-27 西门子股份公司 Housing for an electronic module and production thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6430237A (en) * 1987-07-27 1989-02-01 Matsushita Electronics Corp Manufacture of resin-sealed semiconductor device
CN114557145A (en) * 2019-09-30 2022-05-27 西门子股份公司 Housing for an electronic module and production thereof
CN114557145B (en) * 2019-09-30 2024-03-15 西门子股份公司 Housing for an electronic module and production thereof
US12113324B2 (en) 2019-09-30 2024-10-08 Siemens Aktiengesellschaft Housing of an electronic module and production thereof

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