JPS63314841A - Metal mold for resin seal of semiconductor device - Google Patents
Metal mold for resin seal of semiconductor deviceInfo
- Publication number
- JPS63314841A JPS63314841A JP15184387A JP15184387A JPS63314841A JP S63314841 A JPS63314841 A JP S63314841A JP 15184387 A JP15184387 A JP 15184387A JP 15184387 A JP15184387 A JP 15184387A JP S63314841 A JPS63314841 A JP S63314841A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- lead frame
- mold
- groove
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011347 resin Substances 0.000 title claims abstract description 45
- 229920005989 resin Polymers 0.000 title claims abstract description 45
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 239000002184 metal Substances 0.000 title abstract description 5
- 238000007789 sealing Methods 0.000 claims description 6
- 239000010409 thin film Substances 0.000 abstract description 13
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
- B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Injection Moulding Of Plastics Or The Like (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は樹脂封止型半導体装置の組立に使用する樹脂封
止用金型に関し、特に、トランスファ成形法、又はイン
ジェクシコン成形法に用いられる樹脂封止用金型（以下
単に金型という）に関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a mold for resin encapsulation used in the assembly of resin-encapsulated semiconductor devices, and in particular, to a mold used for transfer molding or injecticon molding. The present invention relates to a mold for resin sealing (hereinafter simply referred to as a mold).
従来の樹脂封止方法によれば、半導体素子が搭載された
リードフレームを、プレス機に固定された上金型と下金
型の間に高圧クランプし、搭載された半導体素子の位置
に対応する金型のキャビティに、樹脂を射出注入し、半
導体素子を保＆する樹脂部を形成するものである。According to the conventional resin encapsulation method, a lead frame with a semiconductor element mounted thereon is clamped under high pressure between an upper mold and a lower mold fixed to a press machine, and the lead frame is clamped under high pressure to correspond to the position of the mounted semiconductor element. A resin is injected into a mold cavity to form a resin part that holds the semiconductor element.
第６図は、従来の金型１を用いて半導体素子２が搭載さ
れたリードフレーム３をクランプしている状態の部分断
面図である。第７図（ａ） 、 （ｂ）は、この金型１
を用いてキャビティ４に樹脂５を射出注入している途中
の状態およびキャビティ４に樹脂５が完全に充填した状
態の部分断面図である。この場合は、リードフレーム３
をクランプしている金型面６とリードフレーム３の界面
に、樹脂５の薄膜７が流れ出しリードフレーム３の先ま
で長く形成された状態となシ、第７図（ｃ）の部分正面
図に従来の金型１によって、樹脂封止を完了した半導体
装置が得られる。FIG. 6 is a partial cross-sectional view of a conventional mold 1 used to clamp a lead frame 3 on which a semiconductor element 2 is mounted. Figures 7(a) and (b) show this mold 1.
FIG. 2 is a partial cross-sectional view of a state in which resin 5 is being injected into cavity 4 using the method, and a state in which resin 5 is completely filled into cavity 4. FIG. In this case, lead frame 3
A thin film 7 of the resin 5 flows out at the interface between the mold surface 6 that clamps the lead frame 3 and extends to the tip of the lead frame 3, as shown in the partial front view of FIG. 7(c). With the conventional mold 1, a semiconductor device that has been completely resin-sealed can be obtained.
このように従来の金型」においては、リードフレーム３
をクランプする面が凹凸のない平滑な面であったため、
リードフレームをクランプする圧力が不足したり、樹脂
を射出する圧力が高過ぎたシ、また上金型と下金型のク
ランプする面の互の平行度が不均一な場合などに、キャ
ビティ４に充填された樹脂５が、リードフレームをクラ
ンプしている金型の面とリードフレームの界面に浸透し
、数ミクロンから数十ミクロンの厚さの樹脂の薄膜７を
リードフレーム３の上に形成する。In this way, in the conventional mold, the lead frame 3
Since the surface to be clamped was smooth with no unevenness,
If the pressure to clamp the lead frame is insufficient, the pressure to inject the resin is too high, or the parallelism of the clamping surfaces of the upper and lower molds is uneven, etc. The filled resin 5 permeates the interface between the lead frame and the surface of the mold that clamps the lead frame, forming a thin resin film 7 with a thickness of several microns to several tens of microns on the lead frame 3. .
この半導体素子の樹脂封止が終了して、樹脂封止済半導
体装置を金型１から取り出した後、樹脂の薄膜７が半導
体装置の外部引き出しリード線上に付着した状態で残っ
てしまう。この樹脂薄膜７は、通常、薄パリ、又はフラ
ッシュなどと呼ばれているもので、外部引き出しリード
線に付着している長さが外部引き出しリード線の方向に
、一定の長さ以上に長い場合は半導体装置の外観を損っ
たシ、外部引き出しリード線の半田付は性を阻害するな
ど゛の不具合が発生する為、樹脂薄膜が長い場合には、
これを除去する必要が生ずるという欠点があった。After the resin sealing of the semiconductor element is completed and the resin-sealed semiconductor device is taken out from the mold 1, the thin resin film 7 remains attached to the external lead wire of the semiconductor device. This resin thin film 7 is usually called thin film or flash, and if the length attached to the external lead wire is longer than a certain length in the direction of the external lead wire. If the resin thin film is long, it may cause problems such as damaging the appearance of the semiconductor device and inhibiting soldering of external lead wires.
This has the disadvantage that it becomes necessary to remove it.
本発明の目的は、このような欠点を除き、樹脂薄膜を発
生し難くして薄膜の除去を不要とした半導体装置の樹脂
封止小金型を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a resin-sealed small mold for a semiconductor device that eliminates the above-mentioned drawbacks, makes it difficult to form a resin thin film, and eliminates the need to remove the thin film.
本発明の半導体装置の樹脂封止用金型の構成は、リード
フレームをクランプする一対の金型面上に、樹脂の注入
されるキャビティ部の外周辺と平行に、かつこの外周辺
に近接して少くとも１本の溝部を設けたことにより、こ
の溝部から先のリードフレーム上に樹脂薄膜が形成され
ないようにしたことを特徴とする。The structure of the mold for resin-sealing a semiconductor device of the present invention is such that a pair of mold surfaces for clamping a lead frame are arranged parallel to and close to the outer periphery of a cavity portion into which resin is injected. By providing at least one groove, a thin resin film is prevented from being formed on the lead frame beyond this groove.
次に本発明を図面によシ詳細に説明する。 Next, the present invention will be explained in detail with reference to the drawings.
第１図（ａ） 、 （ｂ）は本発明の一実施例の金型１
を使用してキャビティ４に樹脂を射出注入している途中
およびそのキャビティ４に樹脂５を完全に充填した後の
各状態を示す部分拡大断面図である。FIGS. 1(a) and 1(b) show a mold 1 according to an embodiment of the present invention.
FIG. 4 is a partially enlarged cross-sectional view showing each state during injection and injection of resin into the cavity 4 using the resin and after the cavity 4 is completely filled with the resin 5.
本実施例において、金型ｌは、リードフレーム３に当る
部分に溝８が設けられている。この＋７−ドフレーム子
をクランプしている金型１と面６とリードフレーム３と
の界面に樹脂薄膜７を形成し始峠たが、従来の金型で形
成されていた長い樹脂薄膜７に相轡する量の樹脂５が溝
８に充填され、溝８の位置で薄膜７が止まった状態とな
っている。In this embodiment, the mold l is provided with a groove 8 in a portion that corresponds to the lead frame 3. Initially, a resin thin film 7 was formed at the interface between the mold 1, surface 6, and lead frame 3 that clamps this +7-deframe element, but the long resin film 7 formed with the conventional mold was The grooves 8 are filled with matching amounts of the resin 5, and the thin film 7 is stopped at the grooves 8.
この金型１によれば、第１図（ｃ）のよ５に、樹脂封止
を完了しても樹脂薄膜７のない半導体装置が得られる。According to this mold 1, a semiconductor device without the resin thin film 7 even after resin sealing is completed, as shown in FIG. 1(c).
第２図は本発明の第２の実施例の金型の部分域面図であ
る。本実施例は、互いに反対の方向に外部引き出しリー
ド線を有する半導体装置に適用するもので、キャビティ
４０両側に溝８，８′を有す ・るものである。FIG. 2 is a partial cross-sectional view of a mold according to a second embodiment of the present invention. This embodiment is applied to a semiconductor device having external lead wires in opposite directions, and has grooves 8 and 8' on both sides of the cavity 40.
第３図、第４図は本発明の第３．第４の実施例の部分底
面図で、四つの方向に外部引き出しリード線を有す透半
導体装置に適用され、四方向に溝８．８′を備えている
。第５、図は本発明の第５の実施例の部分底面図である
。リードフレーム３をクランプする面６に設ける溝８．
８”が２本設けられた場合である。１つの方向の外部引
き出しリード線に対して、１本の隣で樹脂薄ＪＩｌｉ７
の形成を溝の位置におさえる機能を有するが、本実施例
のように必要に応じて２本以上設けてもよい。FIGS. 3 and 4 show the third embodiment of the present invention. Partial bottom view of the fourth embodiment, applied to a transparent semiconductor device with external lead wires in four directions, and provided with grooves 8,8' in four directions. Figure 5 is a partial bottom view of the fifth embodiment of the present invention. A groove 8 provided in the surface 6 for clamping the lead frame 3.
This is a case where two 8" wires are provided.For an external lead wire in one direction, a thin resin JIli7 is placed next to one lead wire.
Although it has the function of suppressing the formation of the groove at the groove position, two or more grooves may be provided as necessary as in this embodiment.
以上説明したように、本発明によれば、樹脂封止時の樹
脂薄膜が発生した場合に？いても、常にリードフレーム
をクランプする面に設けた溝の位置以下に樹脂薄膜が形
成されることを抑えることが可能となるので１．リード
フレーム上の樹脂薄膜を除去する必要がないという効果
がある。As explained above, according to the present invention, what happens when a thin resin film occurs during resin sealing? Even if the lead frame is clamped, it is possible to always prevent the resin thin film from being formed below the position of the groove provided on the surface where the lead frame is clamped.1. This has the advantage that there is no need to remove the resin thin film on the lead frame.
第１図（ａ） 、 （ｂ）は本発明の一実施例の金型を
使用してキャビティに樹脂を射出８注入している途中お
よびそのキャビティに樹脂を完、全に充填した後の状態
を示す部分拡大断面図、第１図（ｃ）は本実施例の金型
で形成された半導体装置の部分正面図、第２図、第３図
、第４図、第５図は本発明の第２゜第３．第４および第
５の２実施例の金−の部分底面図、第６図は従来の金型
の一例によプ半導体装置樹脂を射出注入している途中お
よびそのキャビティに樹脂が完全に充積した後の状態を
示す部分拡大断面図である。
１・・・・・・金型、２・・・・・・半導体素子、３・
旧・・リードフレーム、４・・・・・・キャビティ、５
・旧・・樹ｆＪｋ 、６ ｅ６′・・・・・・リードフ
レームをクランプする金型面、７ＩＩ又Figures 1 (a) and (b) show the state during injection of resin into the cavity using a mold according to an embodiment of the present invention, and after the cavity is completely filled with resin. FIG. 1(c) is a partial front view of a semiconductor device formed using the mold of this embodiment, and FIGS. 2nd゜3rd. FIG. 6 is a partial bottom view of the metal mold of the fourth and fifth embodiments, and FIG. 6 shows an example of a conventional mold. During the injection and injection of semiconductor device resin, the resin is completely filled in the cavity. FIG. 1...Mold, 2...Semiconductor element, 3.
Old... Lead frame, 4... Cavity, 5
・Old... Tree fJk, 6 e6'... Mold surface for clamping the lead frame, 7II or
Claims (1)
の注入されるキャビティ部の外周辺と平行に、かつこの
外周辺に近接して少くとも１本の溝部を設けたことによ
り、この溝部から先のリードフレーム上に樹脂薄膜が形
成されないようにしたことを特徴とする半導体装置の樹
脂封止用金型。At least one groove is provided on the pair of mold surfaces for clamping the lead frame, parallel to and close to the outer periphery of the cavity into which the resin is injected, so that the resin can be injected from this groove. A mold for resin sealing a semiconductor device, characterized in that a thin resin film is not formed on the lead frame.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15184387A JPS63314841A (en) | 1987-06-17 | 1987-06-17 | Metal mold for resin seal of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15184387A JPS63314841A (en) | 1987-06-17 | 1987-06-17 | Metal mold for resin seal of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63314841A true JPS63314841A (en) | 1988-12-22 |
Family
ID=15527496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15184387A Pending JPS63314841A (en) | 1987-06-17 | 1987-06-17 | Metal mold for resin seal of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63314841A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6430237A (en) * | 1987-07-27 | 1989-02-01 | Matsushita Electronics Corp | Manufacture of resin-sealed semiconductor device |
| CN114557145A (en) * | 2019-09-30 | 2022-05-27 | 西门子股份公司 | Housing for an electronic module and production thereof |
-
1987
- 1987-06-17 JP JP15184387A patent/JPS63314841A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6430237A (en) * | 1987-07-27 | 1989-02-01 | Matsushita Electronics Corp | Manufacture of resin-sealed semiconductor device |
| CN114557145A (en) * | 2019-09-30 | 2022-05-27 | 西门子股份公司 | Housing for an electronic module and production thereof |
| CN114557145B (en) * | 2019-09-30 | 2024-03-15 | 西门子股份公司 | Housing for an electronic module and production thereof |
| US12113324B2 (en) | 2019-09-30 | 2024-10-08 | Siemens Aktiengesellschaft | Housing of an electronic module and production thereof |
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