JP2526536Y2 - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JP2526536Y2 JP2526536Y2 JP1986158928U JP15892886U JP2526536Y2 JP 2526536 Y2 JP2526536 Y2 JP 2526536Y2 JP 1986158928 U JP1986158928 U JP 1986158928U JP 15892886 U JP15892886 U JP 15892886U JP 2526536 Y2 JP2526536 Y2 JP 2526536Y2
- Authority
- JP
- Japan
- Prior art keywords
- impurity diffusion
- wiring
- junction
- semiconductor device
- diffusion layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1986158928U JP2526536Y2 (ja) | 1986-10-16 | 1986-10-16 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1986158928U JP2526536Y2 (ja) | 1986-10-16 | 1986-10-16 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6364041U JPS6364041U (US06534493-20030318-C00166.png) | 1988-04-27 |
JP2526536Y2 true JP2526536Y2 (ja) | 1997-02-19 |
Family
ID=31082880
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1986158928U Expired - Lifetime JP2526536Y2 (ja) | 1986-10-16 | 1986-10-16 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2526536Y2 (US06534493-20030318-C00166.png) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2723539B2 (ja) * | 1988-06-10 | 1998-03-09 | 日本電気株式会社 | マスタースライス型半導体装置 |
JP6331447B2 (ja) * | 2014-02-14 | 2018-05-30 | オムロン株式会社 | 静電容量型圧力センサ及び入力装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5141977A (ja) * | 1974-10-07 | 1976-04-08 | Suwa Seikosha Kk | Handotaisochi |
JPS6112056A (ja) * | 1984-06-27 | 1986-01-20 | Toshiba Corp | 半導体装置 |
JPS62287643A (ja) * | 1986-06-06 | 1987-12-14 | Fujitsu Ltd | 半導体装置 |
-
1986
- 1986-10-16 JP JP1986158928U patent/JP2526536Y2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS6364041U (US06534493-20030318-C00166.png) | 1988-04-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS58210656A (ja) | 積層型cmosインバ−タ装置 | |
JPS62154778A (ja) | モノリシック集積回路の製造方法 | |
JPS6321351B2 (US06534493-20030318-C00166.png) | ||
US3942241A (en) | Semiconductor devices and methods of manufacturing same | |
JPS62162362A (ja) | Mos型集積回路及びその製造方法 | |
JP2526536Y2 (ja) | 半導体装置 | |
JPS58124243A (ja) | 半導体装置の製造方法 | |
JP2504498B2 (ja) | 半導体装置 | |
JPH0834286B2 (ja) | 集積回路装置 | |
JP2613939B2 (ja) | 半導体装置 | |
JP3417482B2 (ja) | 半導体装置の製造方法 | |
JP2993041B2 (ja) | 相補型mos半導体装置 | |
JPH0576770B2 (US06534493-20030318-C00166.png) | ||
JPH04361566A (ja) | 半導体集積回路 | |
JP2515040B2 (ja) | 半導体装置およびその製造方法 | |
JPH07221190A (ja) | 半導体集積回路装置 | |
JPH0618251B2 (ja) | 半導体装置 | |
JPH05211294A (ja) | 半導体装置 | |
JPH09219493A (ja) | 抵抗素子及びこの製造方法並びにそれが集積された半導体装置 | |
JPS62112359A (ja) | 半導体装置の製造方法 | |
JPS63177454A (ja) | 半導体装置の製造方法 | |
JPH01225349A (ja) | 電子素子形成用材料 | |
JPS63192249A (ja) | 半導体集積回路装置 | |
JPS60214569A (ja) | Mos型半導体装置 | |
JPS60134458A (ja) | 半導体装置 |