JP2025502947A - 非変形可能ｐ－ＳｉＣウェハの製造のためのプロセス - Google Patents

非変形可能ｐ－ＳｉＣウェハの製造のためのプロセス Download PDF

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Publication number
JP2025502947A
JP2025502947A JP2024539977A JP2024539977A JP2025502947A JP 2025502947 A JP2025502947 A JP 2025502947A JP 2024539977 A JP2024539977 A JP 2024539977A JP 2024539977 A JP2024539977 A JP 2024539977A JP 2025502947 A JP2025502947 A JP 2025502947A
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JP
Japan
Prior art keywords
silicon carbide
slab
heat treatment
polycrystalline silicon
removal
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP2024539977A
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English (en)
Japanese (ja)
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JPWO2023144493A5 (https=
JP2025502947A5 (https=
Inventor
アンドレア キンテロ‐コルメナレス，
フレデリック アリベール，
アレクシス ドルーアン，
セヴラン ルーシェ，
ウォルター シュヴァルツェンバッハ，
ヒューゴ ビアード，
ロイック カベラーン，
オレグ コノンチュク，
シドワン オドゥール，
ジェレミー ロイ，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
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Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Publication of JP2025502947A publication Critical patent/JP2025502947A/ja
Publication of JPWO2023144493A5 publication Critical patent/JPWO2023144493A5/ja
Publication of JP2025502947A5 publication Critical patent/JP2025502947A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/124—Preparing bulk and homogeneous wafers by processing the backside of the wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/18—Preparing bulk and homogeneous wafers by shaping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)
JP2024539977A 2022-01-28 2023-01-27 非変形可能ｐ－ＳｉＣウェハの製造のためのプロセス Pending JP2025502947A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR2200766A FR3132381B1 (fr) 2022-01-28 2022-01-28 Procédé de fabrication d’une plaquette de p-SiC non déformable
FR2200766 2022-01-28
PCT/FR2023/050109 WO2023144493A1 (fr) 2022-01-28 2023-01-27 Procédé de fabrication d'une plaquette de p-sic non déformable

Publications (3)

Publication Number Publication Date
JP2025502947A true JP2025502947A (ja) 2025-01-30
JPWO2023144493A5 JPWO2023144493A5 (https=) 2025-12-05
JP2025502947A5 JP2025502947A5 (https=) 2025-12-05

Family

ID=80999400

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024539977A Pending JP2025502947A (ja) 2022-01-28 2023-01-27 非変形可能ｐ－ＳｉＣウェハの製造のためのプロセス

Country Status (8)

Country Link
US (1) US20250125140A1 (https=)
EP (1) EP4470030A1 (https=)
JP (1) JP2025502947A (https=)
KR (1) KR20240141304A (https=)
CN (1) CN118575257A (https=)
FR (1) FR3132381B1 (https=)
TW (1) TW202340554A (https=)
WO (1) WO2023144493A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3160053A1 (fr) 2024-03-05 2025-09-12 Soitec Procede de preparation d’un substrat support en materiau polycristallin et procede de fabrication d’une structure composite incluant ledit substrat support
FR3160052A1 (fr) 2024-03-05 2025-09-12 Soitec Procede de preparation d’un substrat support en materiau polycristallin et procede de fabrication d’une structure composite incluant ledit substrat support
FR3165753A1 (fr) * 2024-08-21 2026-02-27 Soitec Procédé de fabrication d’une structure composite incluant une couche mince monocristalline transférée sur un substrat support

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014213403A (ja) * 2013-04-24 2014-11-17 住友金属鉱山株式会社 基板の反りの低減方法、基板の製造方法、サファイア基板
JP6572694B2 (ja) * 2015-09-11 2019-09-11 信越化学工業株式会社 ＳｉＣ複合基板の製造方法及び半導体基板の製造方法
JP7255473B2 (ja) * 2019-12-13 2023-04-11 住友金属鉱山株式会社 炭化ケイ素多結晶基板の製造方法

Also Published As

Publication number Publication date
WO2023144493A1 (fr) 2023-08-03
FR3132381A1 (fr) 2023-08-04
EP4470030A1 (fr) 2024-12-04
KR20240141304A (ko) 2024-09-26
FR3132381B1 (fr) 2025-10-17
TW202340554A (zh) 2023-10-16
US20250125140A1 (en) 2025-04-17
CN118575257A (zh) 2024-08-30

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