JP2025502947A5 - - Google Patents
Info
- Publication number
- JP2025502947A5 JP2025502947A5 JP2024539977A JP2024539977A JP2025502947A5 JP 2025502947 A5 JP2025502947 A5 JP 2025502947A5 JP 2024539977 A JP2024539977 A JP 2024539977A JP 2024539977 A JP2024539977 A JP 2024539977A JP 2025502947 A5 JP2025502947 A5 JP 2025502947A5
- Authority
- JP
- Japan
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR2200766A FR3132381B1 (fr) | 2022-01-28 | 2022-01-28 | Procédé de fabrication d’une plaquette de p-SiC non déformable |
| FR2200766 | 2022-01-28 | ||
| PCT/FR2023/050109 WO2023144493A1 (fr) | 2022-01-28 | 2023-01-27 | Procédé de fabrication d'une plaquette de p-sic non déformable |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2025502947A JP2025502947A (ja) | 2025-01-30 |
| JPWO2023144493A5 JPWO2023144493A5 (https=) | 2025-12-05 |
| JP2025502947A5 true JP2025502947A5 (https=) | 2025-12-05 |
Family
ID=80999400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024539977A Pending JP2025502947A (ja) | 2022-01-28 | 2023-01-27 | 非変形可能ｐ－ＳｉＣウェハの製造のためのプロセス |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20250125140A1 (https=) |
| EP (1) | EP4470030A1 (https=) |
| JP (1) | JP2025502947A (https=) |
| KR (1) | KR20240141304A (https=) |
| CN (1) | CN118575257A (https=) |
| FR (1) | FR3132381B1 (https=) |
| TW (1) | TW202340554A (https=) |
| WO (1) | WO2023144493A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3160053A1 (fr) | 2024-03-05 | 2025-09-12 | Soitec | Procede de preparation d’un substrat support en materiau polycristallin et procede de fabrication d’une structure composite incluant ledit substrat support |
| FR3160052A1 (fr) | 2024-03-05 | 2025-09-12 | Soitec | Procede de preparation d’un substrat support en materiau polycristallin et procede de fabrication d’une structure composite incluant ledit substrat support |
| FR3165753A1 (fr) * | 2024-08-21 | 2026-02-27 | Soitec | Procédé de fabrication d’une structure composite incluant une couche mince monocristalline transférée sur un substrat support |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014213403A (ja) * | 2013-04-24 | 2014-11-17 | 住友金属鉱山株式会社 | 基板の反りの低減方法、基板の製造方法、サファイア基板 |
| JP6572694B2 (ja) * | 2015-09-11 | 2019-09-11 | 信越化学工業株式会社 | ＳｉＣ複合基板の製造方法及び半導体基板の製造方法 |
| JP7255473B2 (ja) * | 2019-12-13 | 2023-04-11 | 住友金属鉱山株式会社 | 炭化ケイ素多結晶基板の製造方法 |
-
2022
- 2022-01-28 FR FR2200766A patent/FR3132381B1/fr active Active
-
2023
- 2023-01-13 TW TW112101600A patent/TW202340554A/zh unknown
- 2023-01-27 EP EP23706407.6A patent/EP4470030A1/fr active Pending
- 2023-01-27 KR KR1020247028821A patent/KR20240141304A/ko active Pending
- 2023-01-27 CN CN202380017903.8A patent/CN118575257A/zh active Pending
- 2023-01-27 WO PCT/FR2023/050109 patent/WO2023144493A1/fr not_active Ceased
- 2023-01-27 JP JP2024539977A patent/JP2025502947A/ja active Pending
- 2023-01-27 US US18/834,122 patent/US20250125140A1/en active Pending