JP2024535267A5 - - Google Patents
Info
- Publication number
- JP2024535267A5 JP2024535267A5 JP2024516866A JP2024516866A JP2024535267A5 JP 2024535267 A5 JP2024535267 A5 JP 2024535267A5 JP 2024516866 A JP2024516866 A JP 2024516866A JP 2024516866 A JP2024516866 A JP 2024516866A JP 2024535267 A5 JP2024535267 A5 JP 2024535267A5
- Authority
- JP
- Japan
- Prior art keywords
- process according
- substrate
- initial substrate
- stiffening
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR2109961A FR3127330B1 (fr) | 2021-09-22 | 2021-09-22 | Procede de fabrication d’un substrat support en carbure de silicium poly-cristallin |
| FR2109961 | 2021-09-22 | ||
| PCT/FR2022/051682 WO2023047035A1 (fr) | 2021-09-22 | 2022-09-06 | Procede de fabrication d'un substrat support en carbure de silicium poly-cristallin |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024535267A JP2024535267A (ja) | 2024-09-30 |
| JP2024535267A5 true JP2024535267A5 (https=) | 2025-07-16 |
Family
ID=78770758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024516866A Pending JP2024535267A (ja) | 2021-09-22 | 2022-09-06 | 多結晶炭化ケイ素支持基板を製造するためのプロセス |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20240379351A1 (https=) |
| EP (1) | EP4406004B1 (https=) |
| JP (1) | JP2024535267A (https=) |
| KR (1) | KR20240056832A (https=) |
| CN (1) | CN117999633A (https=) |
| FR (1) | FR3127330B1 (https=) |
| TW (1) | TW202323603A (https=) |
| WO (1) | WO2023047035A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117690780B (zh) * | 2023-12-08 | 2024-06-14 | 松山湖材料实验室 | 氮化铝单晶复合衬底的制备方法 |
| FR3160507B1 (fr) * | 2024-03-20 | 2026-03-27 | Soitec Silicon On Insulator | Procede de traitement d’un substrat presentant une surface en un materiau semiconducteur |
| FR3166782A1 (fr) * | 2024-09-25 | 2026-03-27 | Alpsemi | Procédé de fabrication d’un substrat |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08188408A (ja) * | 1994-12-29 | 1996-07-23 | Toyo Tanso Kk | 化学蒸着法による炭化ケイ素成形体及びその製造方法 |
| FR2738671B1 (fr) * | 1995-09-13 | 1997-10-10 | Commissariat Energie Atomique | Procede de fabrication de films minces a materiau semiconducteur |
| FR2810448B1 (fr) * | 2000-06-16 | 2003-09-19 | Soitec Silicon On Insulator | Procede de fabrication de substrats et substrats obtenus par ce procede |
| JP6619874B2 (ja) | 2016-04-05 | 2019-12-11 | 株式会社サイコックス | 多結晶ＳｉＣ基板およびその製造方法 |
| KR102473088B1 (ko) * | 2017-03-02 | 2022-12-01 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 탄화규소 기판의 제조 방법 및 탄화규소 기판 |
-
2021
- 2021-09-22 FR FR2109961A patent/FR3127330B1/fr active Active
-
2022
- 2022-09-06 US US18/692,239 patent/US20240379351A1/en active Pending
- 2022-09-06 KR KR1020247012435A patent/KR20240056832A/ko active Pending
- 2022-09-06 JP JP2024516866A patent/JP2024535267A/ja active Pending
- 2022-09-06 CN CN202280063331.2A patent/CN117999633A/zh active Pending
- 2022-09-06 WO PCT/FR2022/051682 patent/WO2023047035A1/fr not_active Ceased
- 2022-09-06 EP EP22789252.8A patent/EP4406004B1/fr active Active
- 2022-09-07 TW TW111133825A patent/TW202323603A/zh unknown
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