CN111226314A - 多层复合半导体基板结构及其制备方法 - Google Patents
多层复合半导体基板结构及其制备方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/04—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances mica
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
本公开提出了一种多层复合半导体基板结构及其制备方法，其中，该结构包括：一高热导率材料层、一键合界面层、一介电材料层、一器件功能层和一支撑衬底；所述键合界面层形成于所述高热导率材料层与所述介电材料层之间，所述高热导率材料层通过所述键合界面层与所述介电材料层键合；所述介电材料层形成于由所述支撑衬底支撑的所述器件功能层之上。该制备方法为低温工艺，将高热导率材料层的生长开始面与介电材料层键合或将高热导率材料层的生长停止面与介电材料层键合。本公开多层复合半导体基板结构及其制备方法改善了器件散热效果，避免了高热导率材料层的直接高温沉积工艺对器件功能层造成的热损伤及应力问题，节省了材料成本和研磨加工成本。
Description
PCT国内申请，说明书已公开。
Claims (15)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2018/097478 WO2020019312A1 (zh) | 2018-07-27 | 2018-07-27 | 多层复合半导体基板结构及其制备方法 |
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| CN111226314A true CN111226314A (zh) | 2020-06-02 |
| CN111226314B CN111226314B (zh) | 2023-12-22 |
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| CN201880040129.1A Active CN111226314B (zh) | 2018-07-27 | 2018-07-27 | 多层复合基板结构及其制备方法 |
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| WO (1) | WO2020019312A1 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111769191A (zh) * | 2020-07-31 | 2020-10-13 | 佛山紫熙慧众科技有限公司 | 一种紫外led芯片散热复合基板 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103682148A (zh) * | 2012-08-31 | 2014-03-26 | 三星显示有限公司 | 有机发光装置及其制造方法 |
| CN105826434A (zh) * | 2016-03-23 | 2016-08-03 | 陕西科技大学 | 一种金刚石热沉GaN基LED制作方法 |
| CN106783998A (zh) * | 2016-12-16 | 2017-05-31 | 中国电子科技集团公司第五十五研究所 | 一种基于金刚石衬底的氮化镓高电子迁移率晶体管及其制备方法 |
| CN107919413A (zh) * | 2017-11-17 | 2018-04-17 | 陕西科技大学 | 一种GaN基LED向金刚石热沉转移方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101524902A (zh) * | 2008-03-04 | 2009-09-09 | 佳邦科技股份有限公司 | 低热阻且高导热系数高分子介电复合材料 |
| US20140080951A1 (en) * | 2012-09-19 | 2014-03-20 | Chandrashekar Raman | Thermally conductive plastic compositions, extrusion apparatus and methods for making thermally conductive plastics |
| US9722011B2 (en) * | 2014-04-25 | 2017-08-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Film scheme for MIM device |
| JP2017531900A (ja) * | 2014-09-26 | 2017-10-26 | モメンティブ パフォーマンス マテリアルズ インコーポレイテッド | 変圧器用絶縁紙における窒化ホウ素積層複合体 |
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2018
- 2018-07-27 WO PCT/CN2018/097478 patent/WO2020019312A1/zh active Application Filing
- 2018-07-27 CN CN201880040129.1A patent/CN111226314B/zh active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103682148A (zh) * | 2012-08-31 | 2014-03-26 | 三星显示有限公司 | 有机发光装置及其制造方法 |
| CN105826434A (zh) * | 2016-03-23 | 2016-08-03 | 陕西科技大学 | 一种金刚石热沉GaN基LED制作方法 |
| CN106783998A (zh) * | 2016-12-16 | 2017-05-31 | 中国电子科技集团公司第五十五研究所 | 一种基于金刚石衬底的氮化镓高电子迁移率晶体管及其制备方法 |
| CN107919413A (zh) * | 2017-11-17 | 2018-04-17 | 陕西科技大学 | 一种GaN基LED向金刚石热沉转移方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111769191A (zh) * | 2020-07-31 | 2020-10-13 | 佛山紫熙慧众科技有限公司 | 一种紫外led芯片散热复合基板 |
| CN111769191B (zh) * | 2020-07-31 | 2022-04-08 | 佛山紫熙慧众科技有限公司 | 一种紫外led芯片散热复合基板 |
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| Publication number | Publication date |
|---|---|
| CN111226314B (zh) | 2023-12-22 |
| WO2020019312A1 (zh) | 2020-01-30 |
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