KR20240056832A - 다결정 탄화규소 지지 기판의 제조 방법 - Google Patents

다결정 탄화규소 지지 기판의 제조 방법 Download PDF

Info

Publication number
KR20240056832A
KR20240056832A KR1020247012435A KR20247012435A KR20240056832A KR 20240056832 A KR20240056832 A KR 20240056832A KR 1020247012435 A KR1020247012435 A KR 1020247012435A KR 20247012435 A KR20247012435 A KR 20247012435A KR 20240056832 A KR20240056832 A KR 20240056832A
Authority
KR
South Korea
Prior art keywords
substrate
manufacturing
silicon carbide
initial substrate
initial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247012435A
Other languages
English (en)
Korean (ko)
Inventor
휴고 비아르드
멜라니 라그랑지
Original Assignee
소이텍
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 소이텍 filed Critical 소이텍
Publication of KR20240056832A publication Critical patent/KR20240056832A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H01L21/02376—
    • H01L21/02378—
    • H01L21/02447—
    • H01L21/02527—
    • H01L21/0262—
    • H01L21/185—
    • H01L21/76254—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2903—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3208—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3406—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020247012435A 2021-09-22 2022-09-06 다결정 탄화규소 지지 기판의 제조 방법 Pending KR20240056832A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR2109961A FR3127330B1 (fr) 2021-09-22 2021-09-22 Procede de fabrication d’un substrat support en carbure de silicium poly-cristallin
FRFR2109961 2021-09-22
PCT/FR2022/051682 WO2023047035A1 (fr) 2021-09-22 2022-09-06 Procede de fabrication d'un substrat support en carbure de silicium poly-cristallin

Publications (1)

Publication Number Publication Date
KR20240056832A true KR20240056832A (ko) 2024-04-30

Family

ID=78770758

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247012435A Pending KR20240056832A (ko) 2021-09-22 2022-09-06 다결정 탄화규소 지지 기판의 제조 방법

Country Status (8)

Country Link
US (1) US20240379351A1 (https=)
EP (1) EP4406004B1 (https=)
JP (1) JP2024535267A (https=)
KR (1) KR20240056832A (https=)
CN (1) CN117999633A (https=)
FR (1) FR3127330B1 (https=)
TW (1) TW202323603A (https=)
WO (1) WO2023047035A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117690780B (zh) * 2023-12-08 2024-06-14 松山湖材料实验室 氮化铝单晶复合衬底的制备方法
FR3160507B1 (fr) * 2024-03-20 2026-03-27 Soitec Silicon On Insulator Procede de traitement d’un substrat presentant une surface en un materiau semiconducteur
FR3166782A1 (fr) * 2024-09-25 2026-03-27 Alpsemi Procédé de fabrication d’un substrat

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08188408A (ja) * 1994-12-29 1996-07-23 Toyo Tanso Kk 化学蒸着法による炭化ケイ素成形体及びその製造方法
FR2738671B1 (fr) * 1995-09-13 1997-10-10 Commissariat Energie Atomique Procede de fabrication de films minces a materiau semiconducteur
FR2810448B1 (fr) * 2000-06-16 2003-09-19 Soitec Silicon On Insulator Procede de fabrication de substrats et substrats obtenus par ce procede
JP6619874B2 (ja) 2016-04-05 2019-12-11 株式会社サイコックス 多結晶ＳｉＣ基板およびその製造方法
KR102473088B1 (ko) * 2017-03-02 2022-12-01 신에쓰 가가꾸 고교 가부시끼가이샤 탄화규소 기판의 제조 방법 및 탄화규소 기판

Also Published As

Publication number Publication date
EP4406004C0 (fr) 2025-07-30
JP2024535267A (ja) 2024-09-30
CN117999633A (zh) 2024-05-07
US20240379351A1 (en) 2024-11-14
WO2023047035A1 (fr) 2023-03-30
FR3127330A1 (fr) 2023-03-24
EP4406004A1 (fr) 2024-07-31
FR3127330B1 (fr) 2023-09-22
TW202323603A (zh) 2023-06-16
EP4406004B1 (fr) 2025-07-30

Similar Documents

Publication Publication Date Title
JP7708747B2 (ja) 結晶ＳｉＣのキャリア基材上に単結晶ＳｉＣの薄層を備える複合構造を作成するプロセス
KR20240056832A (ko) 다결정 탄화규소 지지 기판의 제조 방법
KR102711398B1 (ko) 다결정 sic로 이루어진 캐리어 기판 상에 단결정 sic의 박층을 포함하는 복합 구조체의 제조 방법
KR102862061B1 (ko) SiC로 이루어진 캐리어 기판 상에 단결정 SiC로 이루어진 박층을 포함하는 복합 구조체를 제조하기 위한 방법
TWI850519B (zh) 用於製作複合結構之方法，該複合結構包含一單晶ＳｉＣ薄層在一ＳｉＣ支撐底材上
KR102831711B1 (ko) SiC 캐리어 기재 상에 단결정 SiC의 박층을 포함하는 복합 구조체를 제조하기 위한 방법
TWI872240B (zh) 耐極高溫之可分離臨時底材，以及從該底材移轉有用層之方法
US20240170284A1 (en) Method for producing a silicon carbide-based semiconductor structure and intermediate composite structure
KR20230153476A (ko) 탄화 규소-기반 반도체 구조 및 중간 복합 구조의 제조 방법
TW201145360A (en) Semiconductor structure made using improved ion implantation process
US12622189B2 (en) Method for manufacturing a composite structure comprising a thin single-crystal semiconductor layer on a carrier substrate
TWI861253B (zh) 用於製作複合結構之方法，該複合結構包含一單晶SiC薄層在一SiC載體底材上
US20240112908A1 (en) Method for manufacturing a composite structure comprising a thin single-crystal semiconductor layer on a carrier substrate
CN118302839A (zh) 制造包括具有改进的电性能的由碳化硅制成的工作层的半导体结构体的方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

D21 Rejection of application intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902