FR3127330B1 - Procede de fabrication d’un substrat support en carbure de silicium poly-cristallin - Google Patents

Procede de fabrication d’un substrat support en carbure de silicium poly-cristallin Download PDF

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Publication number
FR3127330B1
FR3127330B1 FR2109961A FR2109961A FR3127330B1 FR 3127330 B1 FR3127330 B1 FR 3127330B1 FR 2109961 A FR2109961 A FR 2109961A FR 2109961 A FR2109961 A FR 2109961A FR 3127330 B1 FR3127330 B1 FR 3127330B1
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FR
France
Prior art keywords
silicon carbide
substrate
initial substrate
poly
rear face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2109961A
Other languages
English (en)
French (fr)
Other versions
FR3127330A1 (fr
Inventor
Hugo Biard
Mélanie Lagrange
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR2109961A priority Critical patent/FR3127330B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Priority to EP22789252.8A priority patent/EP4406004B1/fr
Priority to PCT/FR2022/051682 priority patent/WO2023047035A1/fr
Priority to CN202280063331.2A priority patent/CN117999633A/zh
Priority to US18/692,239 priority patent/US20240379351A1/en
Priority to JP2024516866A priority patent/JP2024535267A/ja
Priority to KR1020247012435A priority patent/KR20240056832A/ko
Priority to TW111133825A priority patent/TW202323603A/zh
Publication of FR3127330A1 publication Critical patent/FR3127330A1/fr
Application granted granted Critical
Publication of FR3127330B1 publication Critical patent/FR3127330B1/fr
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2903—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3208—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3406—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
FR2109961A 2021-09-22 2021-09-22 Procede de fabrication d’un substrat support en carbure de silicium poly-cristallin Active FR3127330B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR2109961A FR3127330B1 (fr) 2021-09-22 2021-09-22 Procede de fabrication d’un substrat support en carbure de silicium poly-cristallin
PCT/FR2022/051682 WO2023047035A1 (fr) 2021-09-22 2022-09-06 Procede de fabrication d'un substrat support en carbure de silicium poly-cristallin
CN202280063331.2A CN117999633A (zh) 2021-09-22 2022-09-06 多晶碳化硅支撑衬底的制造方法
US18/692,239 US20240379351A1 (en) 2021-09-22 2022-09-06 Method for fabricating a polycrystalline silicon carbide carrier substrate
EP22789252.8A EP4406004B1 (fr) 2021-09-22 2022-09-06 Procede de fabrication d'un substrat support en carbure de silicium poly-cristallin
JP2024516866A JP2024535267A (ja) 2021-09-22 2022-09-06 多結晶炭化ケイ素支持基板を製造するためのプロセス
KR1020247012435A KR20240056832A (ko) 2021-09-22 2022-09-06 다결정 탄화규소 지지 기판의 제조 방법
TW111133825A TW202323603A (zh) 2021-09-22 2022-09-07 用於製作多晶碳化矽支撐底材之方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2109961A FR3127330B1 (fr) 2021-09-22 2021-09-22 Procede de fabrication d’un substrat support en carbure de silicium poly-cristallin
FR2109961 2021-09-22

Publications (2)

Publication Number Publication Date
FR3127330A1 FR3127330A1 (fr) 2023-03-24
FR3127330B1 true FR3127330B1 (fr) 2023-09-22

Family

ID=78770758

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2109961A Active FR3127330B1 (fr) 2021-09-22 2021-09-22 Procede de fabrication d’un substrat support en carbure de silicium poly-cristallin

Country Status (8)

Country Link
US (1) US20240379351A1 (https=)
EP (1) EP4406004B1 (https=)
JP (1) JP2024535267A (https=)
KR (1) KR20240056832A (https=)
CN (1) CN117999633A (https=)
FR (1) FR3127330B1 (https=)
TW (1) TW202323603A (https=)
WO (1) WO2023047035A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117690780B (zh) * 2023-12-08 2024-06-14 松山湖材料实验室 氮化铝单晶复合衬底的制备方法
FR3160507B1 (fr) * 2024-03-20 2026-03-27 Soitec Silicon On Insulator Procede de traitement d’un substrat presentant une surface en un materiau semiconducteur
FR3166782A1 (fr) * 2024-09-25 2026-03-27 Alpsemi Procédé de fabrication d’un substrat

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08188408A (ja) * 1994-12-29 1996-07-23 Toyo Tanso Kk 化学蒸着法による炭化ケイ素成形体及びその製造方法
FR2738671B1 (fr) * 1995-09-13 1997-10-10 Commissariat Energie Atomique Procede de fabrication de films minces a materiau semiconducteur
FR2810448B1 (fr) * 2000-06-16 2003-09-19 Soitec Silicon On Insulator Procede de fabrication de substrats et substrats obtenus par ce procede
JP6619874B2 (ja) 2016-04-05 2019-12-11 株式会社サイコックス 多結晶ＳｉＣ基板およびその製造方法
KR102473088B1 (ko) * 2017-03-02 2022-12-01 신에쓰 가가꾸 고교 가부시끼가이샤 탄화규소 기판의 제조 방법 및 탄화규소 기판

Also Published As

Publication number Publication date
EP4406004C0 (fr) 2025-07-30
JP2024535267A (ja) 2024-09-30
CN117999633A (zh) 2024-05-07
US20240379351A1 (en) 2024-11-14
WO2023047035A1 (fr) 2023-03-30
FR3127330A1 (fr) 2023-03-24
EP4406004A1 (fr) 2024-07-31
TW202323603A (zh) 2023-06-16
EP4406004B1 (fr) 2025-07-30
KR20240056832A (ko) 2024-04-30

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