TW202340554A - 用於製作不易變形ｐ－ｓｉｃ晶圓的方法 - Google Patents

用於製作不易變形ｐ－ｓｉｃ晶圓的方法 Download PDF

Info

Publication number
TW202340554A
TW202340554A TW112101600A TW112101600A TW202340554A TW 202340554 A TW202340554 A TW 202340554A TW 112101600 A TW112101600 A TW 112101600A TW 112101600 A TW112101600 A TW 112101600A TW 202340554 A TW202340554 A TW 202340554A
Authority
TW
Taiwan
Prior art keywords
silicon carbide
polycrystalline silicon
heat treatment
temperature
plate
Prior art date
Application number
TW112101600A
Other languages
English (en)
Chinese (zh)
Inventor
弗雷德里克 奧利伯
艾利克斯 德朗
瑟弗林 盧西耶
華特 史瓦森巴赫
雨果 比阿德
科爾梅納斯 安德烈 金特羅
洛克 卡貝藍
奧列格 科諾強克
杰若米 羅依
西多尼 歐杜爾
Original Assignee
法商索泰克公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 法商索泰克公司 filed Critical 法商索泰克公司
Publication of TW202340554A publication Critical patent/TW202340554A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/124—Preparing bulk and homogeneous wafers by processing the backside of the wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/18—Preparing bulk and homogeneous wafers by shaping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)
TW112101600A 2022-01-28 2023-01-13 用於製作不易變形ｐ－ｓｉｃ晶圓的方法 TW202340554A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FRFR2200766 2022-01-28
FR2200766A FR3132381B1 (fr) 2022-01-28 2022-01-28 Procédé de fabrication d’une plaquette de p-SiC non déformable

Publications (1)

Publication Number Publication Date
TW202340554A true TW202340554A (zh) 2023-10-16

Family

ID=80999400

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112101600A TW202340554A (zh) 2022-01-28 2023-01-13 用於製作不易變形ｐ－ｓｉｃ晶圓的方法

Country Status (8)

Country Link
US (1) US20250125140A1 (https=)
EP (1) EP4470030A1 (https=)
JP (1) JP2025502947A (https=)
KR (1) KR20240141304A (https=)
CN (1) CN118575257A (https=)
FR (1) FR3132381B1 (https=)
TW (1) TW202340554A (https=)
WO (1) WO2023144493A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3160053A1 (fr) 2024-03-05 2025-09-12 Soitec Procede de preparation d’un substrat support en materiau polycristallin et procede de fabrication d’une structure composite incluant ledit substrat support
FR3160052A1 (fr) 2024-03-05 2025-09-12 Soitec Procede de preparation d’un substrat support en materiau polycristallin et procede de fabrication d’une structure composite incluant ledit substrat support
FR3165753A1 (fr) * 2024-08-21 2026-02-27 Soitec Procédé de fabrication d’une structure composite incluant une couche mince monocristalline transférée sur un substrat support

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014213403A (ja) * 2013-04-24 2014-11-17 住友金属鉱山株式会社 基板の反りの低減方法、基板の製造方法、サファイア基板
JP6572694B2 (ja) * 2015-09-11 2019-09-11 信越化学工業株式会社 ＳｉＣ複合基板の製造方法及び半導体基板の製造方法
JP7255473B2 (ja) * 2019-12-13 2023-04-11 住友金属鉱山株式会社 炭化ケイ素多結晶基板の製造方法

Also Published As

Publication number Publication date
WO2023144493A1 (fr) 2023-08-03
FR3132381A1 (fr) 2023-08-04
EP4470030A1 (fr) 2024-12-04
KR20240141304A (ko) 2024-09-26
FR3132381B1 (fr) 2025-10-17
US20250125140A1 (en) 2025-04-17
JP2025502947A (ja) 2025-01-30
CN118575257A (zh) 2024-08-30

Similar Documents

Publication Publication Date Title
TW202340554A (zh) 用於製作不易變形ｐ－ｓｉｃ晶圓的方法
TWI610373B (zh) 以更佳效能應用單晶材料之類底材
CN108140541B (zh) SiC复合基板的制造方法
CN108140540A (zh) SiC复合基板的制造方法和半导体基板的制造方法
CN108138358A (zh) SiC复合基板的制造方法
CN114730699B (zh) 制造包括位于由SiC制成的载体基板上的单晶SiC薄层的复合结构的方法
WO2020031829A1 (ja) ＧａＮ積層基板の製造方法
TW202141582A (zh) 用於製作複合結構之方法，該複合結構包含一單晶ＳｉＣ薄層在一ＳｉＣ支撐底材上
CN119790485A (zh) 用于处理多晶碳化硅晶片的方法
JP5703853B2 (ja) 貼り合わせウェーハの製造方法
JP2023064715A (ja) 応力緩和及び損傷回復のために薄いｓｉｃウエハに適用されるｃｍｐ処理
JP7620646B2 (ja) 非常に高い温度に対応する剥離可能な仮基板、及び前記基板から加工層を移動させるプロセス
CN120751921B (zh) 一种基于Si-SiC-石墨烯衬底的POI衬底及其制备方法
TWI883864B (zh) 碳化矽晶圓的製造方法
TWI861253B (zh) 用於製作複合結構之方法，該複合結構包含一單晶SiC薄層在一SiC載體底材上
CN116623297B (zh) 一种碳化硅复合衬底及其制备方法和应用
TWI877529B (zh) 多結晶ＳｉＣ膜及其製造方法、電漿蝕刻方法
WO2025052588A1 (ja) ＡｌＮ単結晶基板
WO2025052587A1 (ja) ＡｌＮ単結晶基板の製造方法及びＡｌＮ単結晶基板
CN118048691A (zh) 层叠晶片的制造方法和层叠晶片
TW202517847A (zh) SiC基板的製造方法、半導體裝置的製造方法、SiC基板、及半導體裝置
CN119050000A (zh) 碳化硅晶圆及其制备方法
KR20260038949A (ko) 변형층을 제조하는 공정
JPWO2023144493A5 (https=)
TW202513914A (zh) 用於處理碳化矽基體之方法