FR3132381B1 - Procédé de fabrication d’une plaquette de p-SiC non déformable - Google Patents

Procédé de fabrication d’une plaquette de p-SiC non déformable

Info

Publication number
FR3132381B1
FR3132381B1 FR2200766A FR2200766A FR3132381B1 FR 3132381 B1 FR3132381 B1 FR 3132381B1 FR 2200766 A FR2200766 A FR 2200766A FR 2200766 A FR2200766 A FR 2200766A FR 3132381 B1 FR3132381 B1 FR 3132381B1
Authority
FR
France
Prior art keywords
deformable
manufacturing process
silicon carbide
polycrystalline silicon
sic wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2200766A
Other languages
English (en)
French (fr)
Other versions
FR3132381A1 (fr
Inventor
Andrea Quintero-Colmenares
Frédéric Allibert
Alexis Drouin
Séverin Rouchier
Walter Schwarzenbach
Hugo Biard
Loïc Kabelaan
Oleg Kononchuk
Sidoine Odoul
Jérémy Roi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR2200766A priority Critical patent/FR3132381B1/fr
Priority to TW112101600A priority patent/TW202340554A/zh
Priority to KR1020247028821A priority patent/KR20240141304A/ko
Priority to EP23706407.6A priority patent/EP4470030A1/fr
Priority to CN202380017903.8A priority patent/CN118575257A/zh
Priority to JP2024539977A priority patent/JP2025502947A/ja
Priority to US18/834,122 priority patent/US20250125140A1/en
Priority to PCT/FR2023/050109 priority patent/WO2023144493A1/fr
Publication of FR3132381A1 publication Critical patent/FR3132381A1/fr
Application granted granted Critical
Publication of FR3132381B1 publication Critical patent/FR3132381B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/124—Preparing bulk and homogeneous wafers by processing the backside of the wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/18—Preparing bulk and homogeneous wafers by shaping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)
FR2200766A 2022-01-28 2022-01-28 Procédé de fabrication d’une plaquette de p-SiC non déformable Active FR3132381B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR2200766A FR3132381B1 (fr) 2022-01-28 2022-01-28 Procédé de fabrication d’une plaquette de p-SiC non déformable
TW112101600A TW202340554A (zh) 2022-01-28 2023-01-13 用於製作不易變形ｐ－ｓｉｃ晶圓的方法
EP23706407.6A EP4470030A1 (fr) 2022-01-28 2023-01-27 Procédé de fabrication d'une plaquette de p-sic non déformable
CN202380017903.8A CN118575257A (zh) 2022-01-28 2023-01-27 用于制造不可变形的p-SiC晶片的方法
KR1020247028821A KR20240141304A (ko) 2022-01-28 2023-01-27 변형 불가능한 p-SiC 웨이퍼의 제조 공정
JP2024539977A JP2025502947A (ja) 2022-01-28 2023-01-27 非変形可能ｐ－ＳｉＣウェハの製造のためのプロセス
US18/834,122 US20250125140A1 (en) 2022-01-28 2023-01-27 Method for manufacturing a non-deformable p-sic wafer
PCT/FR2023/050109 WO2023144493A1 (fr) 2022-01-28 2023-01-27 Procédé de fabrication d'une plaquette de p-sic non déformable

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2200766A FR3132381B1 (fr) 2022-01-28 2022-01-28 Procédé de fabrication d’une plaquette de p-SiC non déformable
FR2200766 2022-01-28

Publications (2)

Publication Number Publication Date
FR3132381A1 FR3132381A1 (fr) 2023-08-04
FR3132381B1 true FR3132381B1 (fr) 2025-10-17

Family

ID=80999400

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2200766A Active FR3132381B1 (fr) 2022-01-28 2022-01-28 Procédé de fabrication d’une plaquette de p-SiC non déformable

Country Status (8)

Country Link
US (1) US20250125140A1 (https=)
EP (1) EP4470030A1 (https=)
JP (1) JP2025502947A (https=)
KR (1) KR20240141304A (https=)
CN (1) CN118575257A (https=)
FR (1) FR3132381B1 (https=)
TW (1) TW202340554A (https=)
WO (1) WO2023144493A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3160053A1 (fr) 2024-03-05 2025-09-12 Soitec Procede de preparation d’un substrat support en materiau polycristallin et procede de fabrication d’une structure composite incluant ledit substrat support
FR3160052A1 (fr) 2024-03-05 2025-09-12 Soitec Procede de preparation d’un substrat support en materiau polycristallin et procede de fabrication d’une structure composite incluant ledit substrat support
FR3165753A1 (fr) * 2024-08-21 2026-02-27 Soitec Procédé de fabrication d’une structure composite incluant une couche mince monocristalline transférée sur un substrat support

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014213403A (ja) * 2013-04-24 2014-11-17 住友金属鉱山株式会社 基板の反りの低減方法、基板の製造方法、サファイア基板
JP6572694B2 (ja) * 2015-09-11 2019-09-11 信越化学工業株式会社 ＳｉＣ複合基板の製造方法及び半導体基板の製造方法
JP7255473B2 (ja) * 2019-12-13 2023-04-11 住友金属鉱山株式会社 炭化ケイ素多結晶基板の製造方法

Also Published As

Publication number Publication date
WO2023144493A1 (fr) 2023-08-03
FR3132381A1 (fr) 2023-08-04
EP4470030A1 (fr) 2024-12-04
KR20240141304A (ko) 2024-09-26
TW202340554A (zh) 2023-10-16
US20250125140A1 (en) 2025-04-17
JP2025502947A (ja) 2025-01-30
CN118575257A (zh) 2024-08-30

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