JP2025143329A5 - - Google Patents
Info
- Publication number
- JP2025143329A5 JP2025143329A5 JP2025107900A JP2025107900A JP2025143329A5 JP 2025143329 A5 JP2025143329 A5 JP 2025143329A5 JP 2025107900 A JP2025107900 A JP 2025107900A JP 2025107900 A JP2025107900 A JP 2025107900A JP 2025143329 A5 JP2025143329 A5 JP 2025143329A5
- Authority
- JP
- Japan
- Prior art keywords
- metal layer
- layer
- semiconductor device
- device structure
- ferroelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202263319842P | 2022-03-15 | 2022-03-15 | |
| US63/319,842 | 2022-03-15 | ||
| US17/850,429 | 2022-06-27 | ||
| US17/850,429 US20230301114A1 (en) | 2022-03-15 | 2022-06-27 | Ferroelectric devices and methods of forming the same |
| JP2023017216A JP7704791B2 (ja) | 2022-03-15 | 2023-02-08 | 強誘電体デバイスの製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023017216A Division JP7704791B2 (ja) | 2022-03-15 | 2023-02-08 | 強誘電体デバイスの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2025143329A JP2025143329A (ja) | 2025-10-01 |
| JP2025143329A5 true JP2025143329A5 (https=) | 2025-10-08 |
Family
ID=87048750
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023017216A Active JP7704791B2 (ja) | 2022-03-15 | 2023-02-08 | 強誘電体デバイスの製造方法 |
| JP2025107900A Pending JP2025143329A (ja) | 2022-03-15 | 2025-06-26 | 強誘電体デバイス及びその製造方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023017216A Active JP7704791B2 (ja) | 2022-03-15 | 2023-02-08 | 強誘電体デバイスの製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20230301114A1 (https=) |
| JP (2) | JP7704791B2 (https=) |
| CN (1) | CN116419575A (https=) |
| TW (1) | TWI859692B (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20250070297A (ko) * | 2023-11-13 | 2025-05-20 | 에스케이하이닉스 주식회사 | 반도체 장치 및 이의 제조 방법 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19630883A1 (de) * | 1996-07-31 | 1998-02-05 | Philips Patentverwaltung | Bauteil mit einem Kondensator |
| JP4163164B2 (ja) * | 2004-09-07 | 2008-10-08 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
| JP5531259B2 (ja) * | 2009-03-19 | 2014-06-25 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP2014053568A (ja) * | 2012-09-10 | 2014-03-20 | Toshiba Corp | 強誘電体メモリ及びその製造方法 |
| US20140175367A1 (en) * | 2012-12-20 | 2014-06-26 | Intermolecular Inc. | Materials for Thin Resisive Switching Layers of Re-RAM Cells |
| KR20190008049A (ko) * | 2017-07-14 | 2019-01-23 | 에스케이하이닉스 주식회사 | 강유전성 메모리 소자의 제조 방법 |
| US11121139B2 (en) * | 2017-11-16 | 2021-09-14 | International Business Machines Corporation | Hafnium oxide and zirconium oxide based ferroelectric devices with textured iridium bottom electrodes |
| CN109980014B (zh) * | 2019-03-26 | 2023-04-18 | 湘潭大学 | 一种后栅极铁电栅场效应晶体管及其制备方法 |
| US11227872B2 (en) * | 2019-04-25 | 2022-01-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | FeRAM MFM structure with selective electrode etch |
| US11502104B2 (en) * | 2019-08-15 | 2022-11-15 | Sandisk Technologies Llc | Antiferroelectric memory devices and methods of making the same |
| KR102903263B1 (ko) * | 2019-12-30 | 2025-12-22 | 삼성전자주식회사 | 강유전성의 커패시터, 트랜지스터, 메모리 소자 및 강유전성의 커패시터의 제조방법 |
| DE102020135119B4 (de) * | 2020-05-28 | 2024-08-08 | Taiwan Semiconductor Manufacturing Co. Ltd. | Ferroelektrische speichervorrichtung und verfahren zu deren herstellung |
| JP7547795B2 (ja) * | 2020-06-04 | 2024-09-10 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
| CN112635670A (zh) * | 2020-12-22 | 2021-04-09 | 电子科技大学 | 一种钇掺杂氧化铪基铁电薄膜材料及其制备方法与应用 |
| US11594553B2 (en) * | 2021-01-15 | 2023-02-28 | Sandisk Technologies Llc | Three-dimensional ferroelectric memory device containing lattice-matched templates and methods of making the same |
| EP4040488A1 (en) * | 2021-02-08 | 2022-08-10 | Imec VZW | Ferroelectric device based on hafnium zirconate |
| US20240172451A1 (en) * | 2021-03-26 | 2024-05-23 | Ferroelectric Memory Gmbh | Capacitive memory structure, memory cell, electronic device, and methods thereof |
| US12144270B2 (en) * | 2021-08-11 | 2024-11-12 | International Business Machines Corporation | Back end of line embedded RRAM structure with grain growth enhancement |
-
2022
- 2022-06-27 US US17/850,429 patent/US20230301114A1/en active Pending
-
2023
- 2023-01-07 TW TW112100737A patent/TWI859692B/zh active
- 2023-02-08 JP JP2023017216A patent/JP7704791B2/ja active Active
- 2023-02-15 CN CN202310115882.5A patent/CN116419575A/zh active Pending
-
2025
- 2025-06-26 JP JP2025107900A patent/JP2025143329A/ja active Pending
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