JP2024525835A5 - - Google Patents

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Publication number
JP2024525835A5
JP2024525835A5 JP2024502178A JP2024502178A JP2024525835A5 JP 2024525835 A5 JP2024525835 A5 JP 2024525835A5 JP 2024502178 A JP2024502178 A JP 2024502178A JP 2024502178 A JP2024502178 A JP 2024502178A JP 2024525835 A5 JP2024525835 A5 JP 2024525835A5
Authority
JP
Japan
Prior art keywords
gate insulator
semiconductor device
power semiconductor
region
channel region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024502178A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024525835A (ja
Filing date
Publication date
Priority claimed from EP21186089.5A external-priority patent/EP4120360A1/en
Application filed filed Critical
Publication of JP2024525835A publication Critical patent/JP2024525835A/ja
Publication of JP2024525835A5 publication Critical patent/JP2024525835A5/ja
Pending legal-status Critical Current

Links

JP2024502178A 2021-07-16 2022-07-13 パワー半導体デバイスおよび製造方法 Pending JP2024525835A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP21186089.5A EP4120360A1 (en) 2021-07-16 2021-07-16 Power semiconductor device
EP21186089.5 2021-07-16
PCT/EP2022/069637 WO2023285550A1 (en) 2021-07-16 2022-07-13 Power semiconductor device and production method

Publications (2)

Publication Number Publication Date
JP2024525835A JP2024525835A (ja) 2024-07-12
JP2024525835A5 true JP2024525835A5 (cg-RX-API-DMAC10.html) 2025-06-24

Family

ID=76958797

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024502178A Pending JP2024525835A (ja) 2021-07-16 2022-07-13 パワー半導体デバイスおよび製造方法

Country Status (5)

Country Link
EP (1) EP4120360A1 (cg-RX-API-DMAC10.html)
JP (1) JP2024525835A (cg-RX-API-DMAC10.html)
CN (1) CN117652033A (cg-RX-API-DMAC10.html)
DE (1) DE212022000251U1 (cg-RX-API-DMAC10.html)
WO (1) WO2023285550A1 (cg-RX-API-DMAC10.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102023121453A1 (de) * 2023-08-10 2025-02-13 Infineon Technologies Ag Halbleitervorrichtung mit breiter bandlücke und verfahren zum herstellen einer halbleitervorrichtung mit breiter bandlücke
CN119947212A (zh) * 2023-10-30 2025-05-06 安世半导体科技(上海)有限公司 半导体器件及其制造方法
CN117650164A (zh) * 2023-10-31 2024-03-05 海信家电集团股份有限公司 半导体装置
EP4694615A1 (en) * 2024-08-09 2026-02-11 Hitachi Energy Ltd Semiconductor device

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6262453B1 (en) * 1998-04-24 2001-07-17 Magepower Semiconductor Corp. Double gate-oxide for reducing gate-drain capacitance in trenched DMOS with high-dopant concentration buried-region under trenched gate
JP4371521B2 (ja) * 2000-03-06 2009-11-25 株式会社東芝 電力用半導体素子およびその製造方法
KR100858556B1 (ko) 2000-08-08 2008-09-16 마이크로세미 코포레이션 비대칭적 채널 구조를 가지는 전력 ｍｏｓ 소자
JP4460741B2 (ja) * 2000-09-27 2010-05-12 株式会社東芝 電力用半導体素子及びその製造方法
JP4073176B2 (ja) * 2001-04-02 2008-04-09 新電元工業株式会社 半導体装置およびその製造方法
DE102004026233B4 (de) * 2004-05-28 2015-02-12 Infineon Technologies Ag Trenchtransistor
US7382019B2 (en) * 2005-04-26 2008-06-03 Fairchild Semiconductor Corporation Trench gate FETs with reduced gate to drain charge
US20070063269A1 (en) 2005-09-20 2007-03-22 International Rectifier Corp. Trench IGBT with increased short circuit capability
US8592894B2 (en) * 2008-06-30 2013-11-26 Freescale Semiconductor, Inc. Method of forming a power semiconductor device and power semiconductor device
JP2012204377A (ja) * 2011-03-23 2012-10-22 Toshiba Corp 電力用半導体装置
JP2012234848A (ja) * 2011-04-28 2012-11-29 Sanken Electric Co Ltd 半導体装置
JP6048317B2 (ja) * 2013-06-05 2016-12-21 株式会社デンソー 炭化珪素半導体装置
JP6199755B2 (ja) * 2014-01-27 2017-09-20 トヨタ自動車株式会社 半導体装置
JP6279927B2 (ja) * 2014-02-17 2018-02-14 トヨタ自動車株式会社 絶縁ゲート型スイッチング素子を製造する方法及び絶縁ゲート型スイッチング素子
JP2016054181A (ja) * 2014-09-03 2016-04-14 トヨタ自動車株式会社 絶縁ゲート型スイッチング素子
JP6203697B2 (ja) * 2014-09-30 2017-09-27 株式会社東芝 半導体装置およびその製造方法
JP6335089B2 (ja) * 2014-10-03 2018-05-30 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US10204909B2 (en) 2015-12-22 2019-02-12 Varian Semiconductor Equipment Associates, Inc. Non-uniform gate oxide thickness for DRAM device

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