JP2024525835A - パワー半導体デバイスおよび製造方法 - Google Patents

パワー半導体デバイスおよび製造方法 Download PDF

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Publication number
JP2024525835A
JP2024525835A JP2024502178A JP2024502178A JP2024525835A JP 2024525835 A JP2024525835 A JP 2024525835A JP 2024502178 A JP2024502178 A JP 2024502178A JP 2024502178 A JP2024502178 A JP 2024502178A JP 2024525835 A JP2024525835 A JP 2024525835A
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Japan
Prior art keywords
gate insulator
semiconductor device
region
power semiconductor
channel region
Prior art date
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Pending
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JP2024502178A
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English (en)
Japanese (ja)
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JP2024525835A5 (cg-RX-API-DMAC10.html
Inventor
グプタ，ガウラブ
デ－ミキエリス，ルカ
ビターレ，ボルフガング・アマデウス
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Hitachi Energy Ltd
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Hitachi Energy Ltd
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Publication date
Application filed by Hitachi Energy Ltd filed Critical Hitachi Energy Ltd
Publication of JP2024525835A publication Critical patent/JP2024525835A/ja
Publication of JP2024525835A5 publication Critical patent/JP2024525835A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions

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  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2024502178A 2021-07-16 2022-07-13 パワー半導体デバイスおよび製造方法 Pending JP2024525835A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP21186089.5A EP4120360A1 (en) 2021-07-16 2021-07-16 Power semiconductor device
EP21186089.5 2021-07-16
PCT/EP2022/069637 WO2023285550A1 (en) 2021-07-16 2022-07-13 Power semiconductor device and production method

Publications (2)

Publication Number Publication Date
JP2024525835A true JP2024525835A (ja) 2024-07-12
JP2024525835A5 JP2024525835A5 (cg-RX-API-DMAC10.html) 2025-06-24

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JP2024502178A Pending JP2024525835A (ja) 2021-07-16 2022-07-13 パワー半導体デバイスおよび製造方法

Country Status (5)

Country Link
EP (1) EP4120360A1 (cg-RX-API-DMAC10.html)
JP (1) JP2024525835A (cg-RX-API-DMAC10.html)
CN (1) CN117652033A (cg-RX-API-DMAC10.html)
DE (1) DE212022000251U1 (cg-RX-API-DMAC10.html)
WO (1) WO2023285550A1 (cg-RX-API-DMAC10.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102023121453A1 (de) * 2023-08-10 2025-02-13 Infineon Technologies Ag Halbleitervorrichtung mit breiter bandlücke und verfahren zum herstellen einer halbleitervorrichtung mit breiter bandlücke
CN119947212A (zh) * 2023-10-30 2025-05-06 安世半导体科技(上海)有限公司 半导体器件及其制造方法
CN117650164A (zh) * 2023-10-31 2024-03-05 海信家电集团股份有限公司 半导体装置
EP4694615A1 (en) * 2024-08-09 2026-02-11 Hitachi Energy Ltd Semiconductor device

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6262453B1 (en) * 1998-04-24 2001-07-17 Magepower Semiconductor Corp. Double gate-oxide for reducing gate-drain capacitance in trenched DMOS with high-dopant concentration buried-region under trenched gate
JP2001250947A (ja) * 2000-03-06 2001-09-14 Toshiba Corp 電力用半導体素子およびその製造方法
JP2002110980A (ja) * 2000-09-27 2002-04-12 Toshiba Corp 電力用半導体素子
JP2002299619A (ja) * 2001-04-02 2002-10-11 Shindengen Electric Mfg Co Ltd 半導体装置およびその製造方法
US20050275013A1 (en) * 2004-05-28 2005-12-15 Rainald Sander Power semiconductor with functional element guide structure
US20060237781A1 (en) * 2005-04-26 2006-10-26 Marchant Bruce D Structure and method for forming trench gate FETs with reduced gate to drain charge
JP2012204377A (ja) * 2011-03-23 2012-10-22 Toshiba Corp 電力用半導体装置
JP2012234848A (ja) * 2011-04-28 2012-11-29 Sanken Electric Co Ltd 半導体装置
JP2014236189A (ja) * 2013-06-05 2014-12-15 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP2015141919A (ja) * 2014-01-27 2015-08-03 トヨタ自動車株式会社 半導体装置
JP2015153948A (ja) * 2014-02-17 2015-08-24 トヨタ自動車株式会社 絶縁ゲート型スイッチング素子を製造する方法及び絶縁ゲート型スイッチング素子
JP2016054181A (ja) * 2014-09-03 2016-04-14 トヨタ自動車株式会社 絶縁ゲート型スイッチング素子
JP2016076553A (ja) * 2014-10-03 2016-05-12 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100858556B1 (ko) 2000-08-08 2008-09-16 마이크로세미 코포레이션 비대칭적 채널 구조를 가지는 전력 ｍｏｓ 소자
US20070063269A1 (en) 2005-09-20 2007-03-22 International Rectifier Corp. Trench IGBT with increased short circuit capability
US8592894B2 (en) * 2008-06-30 2013-11-26 Freescale Semiconductor, Inc. Method of forming a power semiconductor device and power semiconductor device
JP6203697B2 (ja) * 2014-09-30 2017-09-27 株式会社東芝 半導体装置およびその製造方法
US10204909B2 (en) 2015-12-22 2019-02-12 Varian Semiconductor Equipment Associates, Inc. Non-uniform gate oxide thickness for DRAM device

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6262453B1 (en) * 1998-04-24 2001-07-17 Magepower Semiconductor Corp. Double gate-oxide for reducing gate-drain capacitance in trenched DMOS with high-dopant concentration buried-region under trenched gate
JP2001250947A (ja) * 2000-03-06 2001-09-14 Toshiba Corp 電力用半導体素子およびその製造方法
JP2002110980A (ja) * 2000-09-27 2002-04-12 Toshiba Corp 電力用半導体素子
JP2002299619A (ja) * 2001-04-02 2002-10-11 Shindengen Electric Mfg Co Ltd 半導体装置およびその製造方法
US20050275013A1 (en) * 2004-05-28 2005-12-15 Rainald Sander Power semiconductor with functional element guide structure
US20060237781A1 (en) * 2005-04-26 2006-10-26 Marchant Bruce D Structure and method for forming trench gate FETs with reduced gate to drain charge
JP2012204377A (ja) * 2011-03-23 2012-10-22 Toshiba Corp 電力用半導体装置
JP2012234848A (ja) * 2011-04-28 2012-11-29 Sanken Electric Co Ltd 半導体装置
JP2014236189A (ja) * 2013-06-05 2014-12-15 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP2015141919A (ja) * 2014-01-27 2015-08-03 トヨタ自動車株式会社 半導体装置
JP2015153948A (ja) * 2014-02-17 2015-08-24 トヨタ自動車株式会社 絶縁ゲート型スイッチング素子を製造する方法及び絶縁ゲート型スイッチング素子
JP2016054181A (ja) * 2014-09-03 2016-04-14 トヨタ自動車株式会社 絶縁ゲート型スイッチング素子
JP2016076553A (ja) * 2014-10-03 2016-05-12 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

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CN117652033A (zh) 2024-03-05
EP4120360A1 (en) 2023-01-18
DE212022000251U1 (de) 2024-04-15
WO2023285550A1 (en) 2023-01-19

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