CN117652033A - 功率半导体器件及制造方法 - Google Patents

功率半导体器件及制造方法 Download PDF

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Publication number
CN117652033A
CN117652033A CN202280050300.3A CN202280050300A CN117652033A CN 117652033 A CN117652033 A CN 117652033A CN 202280050300 A CN202280050300 A CN 202280050300A CN 117652033 A CN117652033 A CN 117652033A
Authority
CN
China
Prior art keywords
gate insulator
region
semiconductor device
power semiconductor
channel region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280050300.3A
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English (en)
Chinese (zh)
Inventor
G·古普塔
L·德-米奇伊里斯
W·A·维塔勒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Energy Ltd
Original Assignee
Hitachi Energy Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Energy Ltd filed Critical Hitachi Energy Ltd
Publication of CN117652033A publication Critical patent/CN117652033A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN202280050300.3A 2021-07-16 2022-07-13 功率半导体器件及制造方法 Pending CN117652033A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP21186089.5A EP4120360A1 (en) 2021-07-16 2021-07-16 Power semiconductor device
EP21186089.5 2021-07-16
PCT/EP2022/069637 WO2023285550A1 (en) 2021-07-16 2022-07-13 Power semiconductor device and production method

Publications (1)

Publication Number Publication Date
CN117652033A true CN117652033A (zh) 2024-03-05

Family

ID=76958797

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280050300.3A Pending CN117652033A (zh) 2021-07-16 2022-07-13 功率半导体器件及制造方法

Country Status (5)

Country Link
EP (1) EP4120360A1 (cg-RX-API-DMAC10.html)
JP (1) JP2024525835A (cg-RX-API-DMAC10.html)
CN (1) CN117652033A (cg-RX-API-DMAC10.html)
DE (1) DE212022000251U1 (cg-RX-API-DMAC10.html)
WO (1) WO2023285550A1 (cg-RX-API-DMAC10.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102023121453A1 (de) * 2023-08-10 2025-02-13 Infineon Technologies Ag Halbleitervorrichtung mit breiter bandlücke und verfahren zum herstellen einer halbleitervorrichtung mit breiter bandlücke
CN119947212A (zh) * 2023-10-30 2025-05-06 安世半导体科技(上海)有限公司 半导体器件及其制造方法
CN117650164A (zh) * 2023-10-31 2024-03-05 海信家电集团股份有限公司 半导体装置
EP4694615A1 (en) * 2024-08-09 2026-02-11 Hitachi Energy Ltd Semiconductor device

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6262453B1 (en) * 1998-04-24 2001-07-17 Magepower Semiconductor Corp. Double gate-oxide for reducing gate-drain capacitance in trenched DMOS with high-dopant concentration buried-region under trenched gate
JP4371521B2 (ja) * 2000-03-06 2009-11-25 株式会社東芝 電力用半導体素子およびその製造方法
KR100858556B1 (ko) 2000-08-08 2008-09-16 마이크로세미 코포레이션 비대칭적 채널 구조를 가지는 전력 ｍｏｓ 소자
JP4460741B2 (ja) * 2000-09-27 2010-05-12 株式会社東芝 電力用半導体素子及びその製造方法
JP4073176B2 (ja) * 2001-04-02 2008-04-09 新電元工業株式会社 半導体装置およびその製造方法
DE102004026233B4 (de) * 2004-05-28 2015-02-12 Infineon Technologies Ag Trenchtransistor
US7382019B2 (en) * 2005-04-26 2008-06-03 Fairchild Semiconductor Corporation Trench gate FETs with reduced gate to drain charge
US20070063269A1 (en) 2005-09-20 2007-03-22 International Rectifier Corp. Trench IGBT with increased short circuit capability
US8592894B2 (en) * 2008-06-30 2013-11-26 Freescale Semiconductor, Inc. Method of forming a power semiconductor device and power semiconductor device
JP2012204377A (ja) * 2011-03-23 2012-10-22 Toshiba Corp 電力用半導体装置
JP2012234848A (ja) * 2011-04-28 2012-11-29 Sanken Electric Co Ltd 半導体装置
JP6048317B2 (ja) * 2013-06-05 2016-12-21 株式会社デンソー 炭化珪素半導体装置
JP6199755B2 (ja) * 2014-01-27 2017-09-20 トヨタ自動車株式会社 半導体装置
JP6279927B2 (ja) * 2014-02-17 2018-02-14 トヨタ自動車株式会社 絶縁ゲート型スイッチング素子を製造する方法及び絶縁ゲート型スイッチング素子
JP2016054181A (ja) * 2014-09-03 2016-04-14 トヨタ自動車株式会社 絶縁ゲート型スイッチング素子
JP6203697B2 (ja) * 2014-09-30 2017-09-27 株式会社東芝 半導体装置およびその製造方法
JP6335089B2 (ja) * 2014-10-03 2018-05-30 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US10204909B2 (en) 2015-12-22 2019-02-12 Varian Semiconductor Equipment Associates, Inc. Non-uniform gate oxide thickness for DRAM device

Also Published As

Publication number Publication date
JP2024525835A (ja) 2024-07-12
EP4120360A1 (en) 2023-01-18
DE212022000251U1 (de) 2024-04-15
WO2023285550A1 (en) 2023-01-19

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