JP2024525833A5 - - Google Patents
Info
- Publication number
- JP2024525833A5 JP2024525833A5 JP2024502167A JP2024502167A JP2024525833A5 JP 2024525833 A5 JP2024525833 A5 JP 2024525833A5 JP 2024502167 A JP2024502167 A JP 2024502167A JP 2024502167 A JP2024502167 A JP 2024502167A JP 2024525833 A5 JP2024525833 A5 JP 2024525833A5
- Authority
- JP
- Japan
- Prior art keywords
- uniform
- semiconductor device
- channel region
- power semiconductor
- profile
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP21186132.3A EP4120362A1 (en) | 2021-07-16 | 2021-07-16 | Power semiconductor device |
| EP21186132.3 | 2021-07-16 | ||
| PCT/EP2022/069644 WO2023285555A1 (en) | 2021-07-16 | 2022-07-13 | Power semiconductor device and production method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024525833A JP2024525833A (ja) | 2024-07-12 |
| JP2024525833A5 true JP2024525833A5 (cg-RX-API-DMAC10.html) | 2025-06-24 |
Family
ID=76958824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024502167A Pending JP2024525833A (ja) | 2021-07-16 | 2022-07-13 | パワー半導体デバイスおよび製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP4120362A1 (cg-RX-API-DMAC10.html) |
| JP (1) | JP2024525833A (cg-RX-API-DMAC10.html) |
| CN (1) | CN117730417A (cg-RX-API-DMAC10.html) |
| DE (1) | DE212022000255U1 (cg-RX-API-DMAC10.html) |
| WO (1) | WO2023285555A1 (cg-RX-API-DMAC10.html) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102023121453A1 (de) * | 2023-08-10 | 2025-02-13 | Infineon Technologies Ag | Halbleitervorrichtung mit breiter bandlücke und verfahren zum herstellen einer halbleitervorrichtung mit breiter bandlücke |
| WO2026098791A1 (en) * | 2024-11-11 | 2026-05-15 | Huawei Technologies Co., Ltd. | Power device with composite gate dielectric layer |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6225669B1 (en) | 1998-09-30 | 2001-05-01 | Advanced Micro Devices, Inc. | Non-uniform gate/dielectric field effect transistor |
| KR100858556B1 (ko) | 2000-08-08 | 2008-09-16 | 마이크로세미 코포레이션 | 비대칭적 채널 구조를 가지는 전력 ｍｏｓ 소자 |
| JP4460741B2 (ja) * | 2000-09-27 | 2010-05-12 | 株式会社東芝 | 電力用半導体素子及びその製造方法 |
| JP4073176B2 (ja) * | 2001-04-02 | 2008-04-09 | 新電元工業株式会社 | 半導体装置およびその製造方法 |
| US8592894B2 (en) * | 2008-06-30 | 2013-11-26 | Freescale Semiconductor, Inc. | Method of forming a power semiconductor device and power semiconductor device |
| DE102011079747A1 (de) * | 2010-07-27 | 2012-02-02 | Denso Corporation | Halbleitervorrichtung mit Schaltelement und Freilaufdiode, sowie Steuerverfahren hierfür |
| JP6048317B2 (ja) * | 2013-06-05 | 2016-12-21 | 株式会社デンソー | 炭化珪素半導体装置 |
| KR20150090669A (ko) * | 2014-01-29 | 2015-08-06 | 에스케이하이닉스 주식회사 | 듀얼일함수 매립게이트형 트랜지스터 및 그 제조 방법, 그를 구비한 전자장치 |
| JP2016054181A (ja) * | 2014-09-03 | 2016-04-14 | トヨタ自動車株式会社 | 絶縁ゲート型スイッチング素子 |
| JP6271078B2 (ja) * | 2015-03-12 | 2018-01-31 | 株式会社日立製作所 | 半導体装置および電力変換装置 |
| JP6472776B2 (ja) * | 2016-02-01 | 2019-02-20 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
| CN109087951A (zh) * | 2018-08-23 | 2018-12-25 | 深圳市南硕明泰科技有限公司 | 功率器件及其制备方法 |
| US11309413B2 (en) * | 2019-10-10 | 2022-04-19 | Wolfspeed, Inc. | Semiconductor device with improved short circuit withstand time and methods for manufacturing the same |
-
2021
- 2021-07-16 EP EP21186132.3A patent/EP4120362A1/en active Pending
-
2022
- 2022-07-13 JP JP2024502167A patent/JP2024525833A/ja active Pending
- 2022-07-13 DE DE212022000255.5U patent/DE212022000255U1/de active Active
- 2022-07-13 CN CN202280050142.1A patent/CN117730417A/zh active Pending
- 2022-07-13 WO PCT/EP2022/069644 patent/WO2023285555A1/en not_active Ceased
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