JP2024525833A - パワー半導体デバイスおよび製造方法 - Google Patents

パワー半導体デバイスおよび製造方法 Download PDF

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Publication number
JP2024525833A
JP2024525833A JP2024502167A JP2024502167A JP2024525833A JP 2024525833 A JP2024525833 A JP 2024525833A JP 2024502167 A JP2024502167 A JP 2024502167A JP 2024502167 A JP2024502167 A JP 2024502167A JP 2024525833 A JP2024525833 A JP 2024525833A
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Japan
Prior art keywords
uniform
semiconductor device
channel region
profile
gate
Prior art date
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Pending
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JP2024502167A
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English (en)
Japanese (ja)
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JP2024525833A5 (cg-RX-API-DMAC10.html
Inventor
グプタ，ガウラブ
デ－ミキエリス，ルカ
ビターレ，ボルフガング・アマデウス
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Hitachi Energy Ltd
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Hitachi Energy Ltd
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Publication date
Application filed by Hitachi Energy Ltd filed Critical Hitachi Energy Ltd
Publication of JP2024525833A publication Critical patent/JP2024525833A/ja
Publication of JP2024525833A5 publication Critical patent/JP2024525833A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/683—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being parallel to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs

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  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
JP2024502167A 2021-07-16 2022-07-13 パワー半導体デバイスおよび製造方法 Pending JP2024525833A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP21186132.3A EP4120362A1 (en) 2021-07-16 2021-07-16 Power semiconductor device
EP21186132.3 2021-07-16
PCT/EP2022/069644 WO2023285555A1 (en) 2021-07-16 2022-07-13 Power semiconductor device and production method

Publications (2)

Publication Number Publication Date
JP2024525833A true JP2024525833A (ja) 2024-07-12
JP2024525833A5 JP2024525833A5 (cg-RX-API-DMAC10.html) 2025-06-24

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JP2024502167A Pending JP2024525833A (ja) 2021-07-16 2022-07-13 パワー半導体デバイスおよび製造方法

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EP (1) EP4120362A1 (cg-RX-API-DMAC10.html)
JP (1) JP2024525833A (cg-RX-API-DMAC10.html)
CN (1) CN117730417A (cg-RX-API-DMAC10.html)
DE (1) DE212022000255U1 (cg-RX-API-DMAC10.html)
WO (1) WO2023285555A1 (cg-RX-API-DMAC10.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102023121453A1 (de) * 2023-08-10 2025-02-13 Infineon Technologies Ag Halbleitervorrichtung mit breiter bandlücke und verfahren zum herstellen einer halbleitervorrichtung mit breiter bandlücke
WO2026098791A1 (en) * 2024-11-11 2026-05-15 Huawei Technologies Co., Ltd. Power device with composite gate dielectric layer

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020036311A1 (en) * 2000-09-27 2002-03-28 Hidetaka Hattori Power semiconductor device and manufacturing method thereof
JP2002299619A (ja) * 2001-04-02 2002-10-11 Shindengen Electric Mfg Co Ltd 半導体装置およびその製造方法
US20160064550A1 (en) * 2014-09-03 2016-03-03 Toyota Jidosha Kabushiki Kaisha Insulated gate type switching device
WO2016143126A1 (ja) * 2015-03-12 2016-09-15 株式会社日立製作所 半導体装置および電力変換装置
JP2017139441A (ja) * 2016-02-01 2017-08-10 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法

Family Cites Families (8)

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Publication number Priority date Publication date Assignee Title
US6225669B1 (en) 1998-09-30 2001-05-01 Advanced Micro Devices, Inc. Non-uniform gate/dielectric field effect transistor
KR100858556B1 (ko) 2000-08-08 2008-09-16 마이크로세미 코포레이션 비대칭적 채널 구조를 가지는 전력 ｍｏｓ 소자
US8592894B2 (en) * 2008-06-30 2013-11-26 Freescale Semiconductor, Inc. Method of forming a power semiconductor device and power semiconductor device
DE102011079747A1 (de) * 2010-07-27 2012-02-02 Denso Corporation Halbleitervorrichtung mit Schaltelement und Freilaufdiode, sowie Steuerverfahren hierfür
JP6048317B2 (ja) * 2013-06-05 2016-12-21 株式会社デンソー 炭化珪素半導体装置
KR20150090669A (ko) * 2014-01-29 2015-08-06 에스케이하이닉스 주식회사 듀얼일함수 매립게이트형 트랜지스터 및 그 제조 방법, 그를 구비한 전자장치
CN109087951A (zh) * 2018-08-23 2018-12-25 深圳市南硕明泰科技有限公司 功率器件及其制备方法
US11309413B2 (en) * 2019-10-10 2022-04-19 Wolfspeed, Inc. Semiconductor device with improved short circuit withstand time and methods for manufacturing the same

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020036311A1 (en) * 2000-09-27 2002-03-28 Hidetaka Hattori Power semiconductor device and manufacturing method thereof
JP2002110980A (ja) * 2000-09-27 2002-04-12 Toshiba Corp 電力用半導体素子
JP2002299619A (ja) * 2001-04-02 2002-10-11 Shindengen Electric Mfg Co Ltd 半導体装置およびその製造方法
US20160064550A1 (en) * 2014-09-03 2016-03-03 Toyota Jidosha Kabushiki Kaisha Insulated gate type switching device
JP2016054181A (ja) * 2014-09-03 2016-04-14 トヨタ自動車株式会社 絶縁ゲート型スイッチング素子
WO2016143126A1 (ja) * 2015-03-12 2016-09-15 株式会社日立製作所 半導体装置および電力変換装置
JP2017139441A (ja) * 2016-02-01 2017-08-10 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法

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WO2023285555A1 (en) 2023-01-19
EP4120362A1 (en) 2023-01-18
DE212022000255U1 (de) 2024-06-13
CN117730417A (zh) 2024-03-19

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