TWI473267B - 金氧半場效電晶體元件 - Google Patents

金氧半場效電晶體元件 Download PDF

Info

Publication number
TWI473267B
TWI473267B TW101141197A TW101141197A TWI473267B TW I473267 B TWI473267 B TW I473267B TW 101141197 A TW101141197 A TW 101141197A TW 101141197 A TW101141197 A TW 101141197A TW I473267 B TWI473267 B TW I473267B
Authority
TW
Taiwan
Prior art keywords
region
effect transistor
field effect
doped
doped region
Prior art date
Application number
TW101141197A
Other languages
English (en)
Other versions
TW201419528A (zh
Inventor
Chee Wee Liu
Hui Hsuan Wang
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Priority to TW101141197A priority Critical patent/TWI473267B/zh
Priority to US13/914,640 priority patent/US9018638B2/en
Publication of TW201419528A publication Critical patent/TW201419528A/zh
Application granted granted Critical
Publication of TWI473267B publication Critical patent/TWI473267B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H01L29/0623—Buried supplementary region, e.g. buried guard ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66416—Static induction transistors [SIT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Description

金氧半場效電晶體元件
本發明是有關於一種半導體元件，且特別是有關於一種金氧半場效電晶體(metal oxide semiconductor field effect transistor；MOSFET)元件。
金氧半場效電晶體(MOSFET)元件由於其耗電量非常小，並且適合高密度的積集製造等諸多優點，為現今半導體製程中最重要而且應用最廣泛的一種積體電路元件。
一種常見的金氧半場效電晶體元件為雙擴散金氧半場效電晶體(double-diffused MOSFET；DMOSFET)。雙擴散金氧半場效電晶體常見的有橫向雙擴散金氧半場效電晶體(lateral double-diffused MOSFET；LDMOSFET)及垂直雙擴散金氧半場效電晶體(vertical double-diffused MOSFET；VDMOSFET)兩種。
然而，對於傳統的雙擴散金氧半場效電晶體而言，不論是LDMOSFET元件或是VDMOSFET元件對於提高崩潰電壓(breakdown voltage)的能力均有限。
有鑑於此，本發明提出一種金氧半場效電晶體元件，可有效提高崩潰電壓，提升元件效能。
本發明提出一種金氧半場效電晶體元件。具有第一導電型之磊晶層配置於具有第一導電型之基底上。絕緣溝渠配置於磊晶層中。具有第二導電型之井區配置於絕緣溝渠 一側之磊晶層中。第一導電型之重摻雜區配置於井區中。閘極結構配置於磊晶層上，且與重摻雜區部分重疊。具有第二導電型之至少二第一摻雜區配置於磊晶層中之井區下方。具有第二導電型之至少一第二摻雜區配置於磊晶層中且位於第一摻雜區之間。此外，第一摻雜區與第二摻雜區此分開，第一摻雜區沿第一方向延伸，第二摻雜區沿第二方向延伸，且第二方向與第一方向不同。
在本發明之一實施例中，上述第二方向垂直於第一方向。
在本發明之一實施例中，上述第一摻雜區為水平摻雜區，第二摻雜區為垂直摻雜區。
在本發明之一實施例中，上述第二摻雜區的頂面與實質上不高於第一摻雜區的頂面。
在本發明之一實施例中，上述第二摻雜區的頂面與實質上齊平於第一摻雜區的頂面。
在本發明之一實施例中，上述至少二第一摻雜區包括四個第一摻雜區，其配置於第二摻雜區的兩側。
在本發明之一實施例中，上述第二摻雜區的頂面實質上不高於第一摻雜區的最高頂面。
在本發明之一實施例中，上述第二摻雜區的頂面實質上不低於第一摻雜區的最低底面。
在本發明之一實施例中，上述第二摻雜區的底面位於磊晶層之約70~80%的深度處。
在本發明之一實施例中，上述第二摻雜區的摻雜濃度 小於第一摻雜區的摻雜濃度。
在本發明之一實施例中，上述第二摻雜區的摻雜濃度大於磊晶層的摻雜濃度。
在本發明之一實施例中，上述金氧半場效電晶體元件更包括配置於重摻雜區的表面上的蕭特基接點。
在本發明之一實施例中，上述閘極結構包括閘絕緣層及閘極。
在本發明之一實施例中，上述基底和磊晶層的材料包括矽或碳化矽。
在本發明之一實施例中，上述第一導電型為N型，第二導電型為P型；或第一導電型為P型，第二導電型為N型。
基於上述，在本發明之金氧半場效電晶體元件之N型磊晶層中的P型井區下方，配置有至少二P型水平摻雜區及位於上述P型水平摻雜區之間的至少一P型垂直摻雜區。藉由此種組態可降低P型井區與N型磊晶層之間的電場，並減少P型水平摻雜區的電場，以有效提高元件的崩潰電壓及元件效能。
為讓本發明之上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
圖1A為根據本發明一實施例所繪示之金氧半場效電晶體元件的剖面示意圖。
請參照圖1A，本發明之金氧半場效電晶體元件10a 包括具有第一導電型之基底100、具有第一導電型之磊晶層102、絕緣溝渠104、具有第二導電型之井區106、第一導電型之重摻雜區108及閘極結構110。
基底100例如是具有N型重摻雜(N+ )之基底，例如是矽基底或碳化矽基底。此具有N型重摻雜之碳化矽基底可作為金氧半場效電晶體10之汲極。磊晶層102例如是具有N型輕摻雜(N- )之磊晶層，其可配置於基底100上。磊晶層102的材料包括矽或碳化矽。N+ 表示具有較高濃度之N型雜質者；N- 表示具有較低濃度之N型雜質者。
絕緣溝渠104配置於磊晶層102中。絕緣溝渠104內填充的材料可以是氧化矽、氮化矽或氮氧化矽，且上述材料可以單獨使用或組合使用。在一實施例中，絕緣溝渠104貫穿磊晶層102並與基底100接觸，如圖1A所示。在另一實施例中(未繪示)，絕緣溝渠104也可以配置為不與基底接觸。
井區106例如是P型井區，其配置於絕緣溝渠104一側之102磊晶層中。具體言之，井區106緊鄰於絕緣溝渠104的側壁並與絕緣溝渠104接觸。
重摻雜區108例如是具有N型重摻雜(N+ )之摻雜區，其可作為金氧半場效電晶體10之源極。重摻雜區108配置於井區106中。具體言之，井區106包圍重摻雜區108的側面與底面，使得重摻雜區108未與絕緣溝渠104的側壁接觸。在一實施例中，蕭特基接點107也可以配置於重摻雜區108表面上，以降低源極的電阻。蕭特基接點107的 材料為金屬，例如是鎳或是鋁。
閘極結構110配置於磊晶層102上，且與重摻雜區108部分重疊。閘極結構110包括閘絕緣層109及閘極111。閘絕緣層109的材料例如是氧化矽。閘極111的材料例如是摻雜多晶矽。
此外，本發明之金氧半場效電晶體元件10更包括具有第二導電型之至少二第一摻雜區112及具有第二導電型之至少一第二摻雜區114。
第一摻雜區112例如是P型摻雜區，其配置於磊晶層102中之井區106下方。第二摻雜區114例如是P型摻雜區，其配置於磊晶層102中且位於第一摻雜區112之間。此外，第二摻雜區114的摻雜濃度小於第一摻雜區112的摻雜濃度，但第二摻雜區114的摻雜濃度大於磊晶層102的摻雜濃度。
特別要說明的是，第一摻雜區112與第二摻雜區114彼此分開，第一摻雜區112沿第一方向延伸，第二摻雜區114沿第二方向延伸，且第二方向與第一方向不同。在一實施例中，第二方向垂直於第一方向。舉例來說，第一方向例如是X方向，第二方向例如是Y方向，亦即第一摻雜區112為水平摻雜區(或稱水平島嶼)，而第二摻雜區114為垂直摻雜區(或稱垂直島嶼)，如圖1A所示。然而，本發明並不以此為限。在另一實施例中，當第一方向例如是X方向時，第二方向也可以是與Y方向具有夾角θ之方向，而夾角θ的範圍為大於0度且小於90度，如圖1B所 示。
第二摻雜區114的頂面與實質上不高於第一摻雜區112的頂面。在一實施例中，第二摻雜區114的頂面與實質上齊平於第一摻雜區112的頂面，如圖1A所示。此外，第二摻雜區114的底面位於磊晶層102之從其表面算起之約70~80%的深度處。
在上述實施例中，是以兩個第一摻雜區112及一個第二摻雜區114為例來說明之，但不用以限定本發明。換言之，本發明並不對第一摻雜區112及第二摻雜區114的數量作限制。
在另一實施例中，本發明之金氧半場效電晶體元件也可以具有四個第一摻雜區112及一個第二摻雜區114，這些第一摻雜區112配置於第二摻雜區114的兩側。舉例來說，第二摻雜區114的兩側各設有兩個第一摻雜區112，且這些第一摻雜區112呈對稱配置，如圖1C所示。在此實施例中，第二摻雜區114的頂面實質上不高於第一摻雜區112的最高頂面，且不低於第一摻雜區112的最低底面。舉例來說，第二摻雜區114的頂面可與第一摻雜區112的最高頂面齊平(如圖1C所示)，或者可介於第一層之第一摻雜區112與第二層之第一摻雜區112之間(如圖1D所示)。
在又一實施例中，本發明之金氧半場效電晶體元件也可以具有兩個第一摻雜區112及兩個第二摻雜區114，且上述摻雜區的頂面大致上齊平，如圖1E所示。
特別要說明的是，在本發明之金氧半場效電晶體元件中，至少一個P型垂直摻雜區配置於至少兩個P型水平摻雜區之間，藉由電荷共享效應(charge sharing effect)，可降低P型水平摻雜區與N型磊晶層之間的電場。此外，上述組態亦可降低P型井區與N型磊晶層之間的電場，進而提升元件的崩潰電壓。
此外，在具有相同水平島嶼層數的條件下，與需要滿足電荷平衡(charge balance)(即受體數量等於供體數量：Qa=Qd)之超接面(super junction)元件相比，本發明之金氧半場效電晶體元件只要滿足垂直摻雜區的摻雜濃度大於磊晶層的摻雜濃度(即受體的摻雜濃度大於供體的摻雜濃度：Na>Nd)，即可輕易提高崩潰電壓。換言之，就提高崩潰電壓而言，本發明之金氧半場效電晶體元件較習知之超接面元件具有更大的製程裕度。
在以上的實施例中，是以第一導電型為N型，第二導電型為P型為例來說明之，但本發明並不以此為限。熟知此技藝者應了解，第一導電型也可以為P型，而第二導電型為N型。
以下，將列舉多個實例及比較例以驗證本發明的功效。
實例1
實例1的結構如圖1A所示，其中N+ 基底的摻雜濃度為1×1018 ，N- 磊晶層的摻雜濃度為1.1×1015 ，P型井區的摻雜濃度為5×1016 ，N+ 重摻雜區的摻雜濃度為1×1018 ，兩個 第一摻雜區(水平摻雜區)的摻雜濃度為4×1016 ，一個第二摻雜區(垂直摻雜區)的摻雜濃度為2×1016 。
實例2
實例2的結構如圖1C所示，其中N+ 基底的摻雜濃度為1×1018 ，N- 磊晶層的摻雜濃度為1.1×1015 ，P型井區的摻雜濃度為5×1016 ，N+ 重摻雜區的摻雜濃度為1×1018 ，四個第一摻雜區(水平摻雜區)的摻雜濃度為4×1016 ，一個第二摻雜區(垂直摻雜區)的摻雜濃度為2×1016 。
比較例1
比較例1的結構與實例1的結構類似，其差異之處在於比較例1的結構不具有水平摻雜區及垂直摻雜區，如圖2A所示。
比較例2
比較例2的結構與實例1的結構類似，其差異之處在於比較例2的結構不具有垂直摻雜區，僅具有單層之水平摻雜區212，如圖2B所示。
比較例3
比較例3的結構與實例2的結構類似，其差異之處在於比較例3的結構不具有垂直摻雜區，僅具有雙層之水平摻雜區212，如圖2C所示。
圖3為實例1之金氧半場效電晶體元件的電場分布圖。圖4為比較例2之金氧半場效電晶體元件的電場分布圖。比較圖3及圖4可得知，藉由於兩個水平摻雜區中配置一個垂直摻雜區，可有效降低P型井區的電場。具體言 之，於相同偏壓(Vd =2400 V)時，相較於比較例2之不具有垂直摻雜區之金氧半場效電晶體元件20b，實例1之具有垂直摻雜區之金氧半場效電晶體元件10a可有效縮小1.73×106 之電場的分布面積。
圖5為實例及比較例之電場對垂直方向距離的關係圖。請參照圖5，由於不具有水平及垂直摻雜區，比較例1之金氧半場效電晶體元件20a的曲線僅具有一個波峰，其表示P型井區的電場。此外，由於配置單層之水平摻雜區及一個垂直摻雜區，實例1之金氧半場效電晶體元件10a的曲線可具有兩個波峰，第一個波峰表示P型井區的電場，而第二個波峰表示水平摻雜區的電場。另外，由於配置雙層之水平摻雜區及一個垂直摻雜區，實例2之金氧半場效電晶體元件10c的曲線可具有三個波峰，第一個波峰表示P型井區的電場，第二個波峰表示上層之水平摻雜區的電場，而第三個波峰表示下層之水平摻雜區的電場。如圖5所示，就P型井區的波峰看來，比較例1之波峰大於實例1及實例2之波峰。因此，本發明於至少二個水平摻雜區之間配置一個垂直摻雜區，確實可有效降低P型井區的電場。此外，實例2具有比實例1較低的P型井區波峰和上層水平摻雜區波峰，以進一步提升崩潰電壓。
圖6為實例2及比較例3之I-V圖，其中閘極電壓Vg 為10V。圖6之曲線的斜率可表示開啟電阻(ON-resistance，RON )。可看出，實例2及比較例3之曲線幾乎重疊，表示垂直摻雜區的配置並不會改變開啟電阻。
圖7為實例及比較例之I-V圖，其中閘極與源極接地。如圖7所示，可看出逆向電流很小，幾乎等於零，直到達到崩潰電壓後，電流才快速增加。具體而言，比較例1之崩潰電壓約為2400 V左右，比較例2之崩潰電壓約為2700 V左右，比較例3之崩潰電壓約為2800 V左右，而實例1之崩潰電壓約為3100 V左右，實例2之崩潰電壓約為3180 V左右。由此得知，垂直摻雜區的配置可有效提升崩潰電壓。
圖8為實例及比較例之崩潰電壓對垂直摻雜區的摻雜濃度的關係圖。如圖8所示，垂直摻雜區的配置可有效提升崩潰電壓，且垂直摻雜區的摻雜濃度會影響崩潰電壓，其中垂直摻雜區的摻雜濃度在大約為2×1016 時可使得元件之崩潰電壓達到最高值。
綜上所述，在本發明之金氧半場效電晶體元件之N型磊晶層中的P型井區下方，配置有至少二P型水平摻雜區及位於上述P型水平摻雜區之間的至少一P型垂直摻雜區。如此一來，藉由減少表面電場(reduced surface field；RESURF)效果，可降低P型井區與N型磊晶層之間的電場，以及減少P型水平摻雜區的電場。此外，與習知金氧半場效電晶體元件相比，本發明之金氧半場效電晶體元件可有效提高崩潰電壓，並提升元件效能。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，故本 發明之保護範圍當視後附之申請專利範圍所界定者為準。
10a~10e‧‧‧本發明之金氧半場效電晶體元件
20a~20c‧‧‧習知之金氧半場效電晶體元件
100‧‧‧基底
102‧‧‧磊晶層
104‧‧‧絕緣溝渠
106‧‧‧井區
107‧‧‧蕭特基接點
108‧‧‧重摻雜區
109‧‧‧閘絕緣層
110‧‧‧閘極結構
111‧‧‧閘極
112、212‧‧‧第一摻雜區
114‧‧‧第二摻雜區
圖1A為根據本發明一實施例所繪示之金氧半場效電晶體元件的剖面示意圖。
圖1B為根據本發明另一實施例所繪示之金氧半場效電晶體元件的剖面示意圖。
圖1C為根據本發明又一實施例所繪示之金氧半場效電晶體元件的剖面示意圖。
圖1D為根據本發明再一實施例所繪示之金氧半場效電晶體元件的剖面示意圖。
圖1E為根據本發明一實施例所繪示之金氧半場效電晶體元件的剖面示意圖。
圖2A為一習知金氧半場效電晶體元件的剖面示意圖。
圖2B為另一習知金氧半場效電晶體元件的剖面示意圖。
圖2C為又一習知金氧半場效電晶體元件的剖面示意圖。
圖3為實例1之金氧半場效電晶體元件的電場分布圖。
圖4為比較例2之金氧半場效電晶體元件的電場分布圖。
圖5為實例及比較例之電場對垂直方向距離的關係圖。
圖6為實例2及比較例3之I-V圖，其中閘極電壓Vg 為10V。
圖7為實例及比較例之I-V圖，其中閘極與源極接地。
圖8為實例及比較例之崩潰電壓對垂直摻雜區的摻雜濃度的關係圖。
10a‧‧‧本發明之金氧半場效電晶體元件
100‧‧‧基底
102‧‧‧磊晶層
104‧‧‧絕緣溝渠
106‧‧‧井區
107‧‧‧蕭特基接點
108‧‧‧重摻雜區
109‧‧‧閘絕緣層
110‧‧‧閘極結構
111‧‧‧閘極
112‧‧‧第一摻雜區
114‧‧‧第二摻雜區

Claims (15)

  1. 一種金氧半場效電晶體元件，包括：具有一第一導電型之一基底；具有該第一導電型之一磊晶層，配置於該基底上；一絕緣溝渠，配置於該磊晶層中；具有一第二導電型之一井區，配置於該絕緣溝渠一側之該磊晶層中；該第一導電型之一重摻雜區，配置於該井區中；一閘極結構，配置於該磊晶層上，且與該重摻雜區部分重疊；具有該第二導電型之至少二第一摻雜區，配置於該磊晶層中之該井區下方；以及具有該第二導電型之至少一第二摻雜區，配置於該磊晶層中且位於該些第一摻雜區之間，其中該些第一摻雜區與該第二摻雜區彼此分開，該些第一摻雜區沿一第一方向延伸，該第二摻雜區沿一第二方向延伸，且該第二方向與該第一方向不同。
  2. 如申請專利範圍第1項所述之金氧半場效電晶體元件，其中該第二方向垂直於該第一方向。
  3. 如申請專利範圍第1項所述之金氧半場效電晶體元件，其中該些第一摻雜區為水平摻雜區，該第二摻雜區為垂直摻雜區。
  4. 如申請專利範圍第1項所述之金氧半場效電晶體元件，其中該第二摻雜區的頂面與實質上不高於該些第一 摻雜區的頂面。
  5. 如申請專利範圍第1項所述之金氧半場效電晶體元件，其中該第二摻雜區的頂面與實質上齊平於該些第一摻雜區的頂面。
  6. 如申請專利範圍第1項所述之金氧半場效電晶體元件，其中該至少二第一摻雜區包括四個第一摻雜區，其配置於該第二摻雜區的兩側。
  7. 如申請專利範圍第6項所述之金氧半場效電晶體元件，其中該第二摻雜區的頂面實質上不高於該些第一摻雜區的最高頂面。
  8. 如申請專利範圍第6項所述之金氧半場效電晶體元件，其中該第二摻雜區的頂面實質上不低於該些第一摻雜區的最低底面。
  9. 如申請專利範圍第1項所述之金氧半場效電晶體元件，其中該第二摻雜區的底面位於該磊晶層之70~80%的深度處。
  10. 如申請專利範圍第1項所述之金氧半場效電晶體元件，其中該第二摻雜區的摻雜濃度小於該些第一摻雜區的摻雜濃度。
  11. 如申請專利範圍第1項所述之金氧半場效電晶體元件，其中該第二摻雜區的摻雜濃度大於該磊晶層的摻雜濃度。
  12. 如申請專利範圍第1項所述之金氧半場效電晶體元件，更包括一蕭特基接點，配置於該重摻雜區的表面上。
  13. 如申請專利範圍第1項所述之金氧半場效電晶體元件，其中該閘極結構包括一閘絕緣層及一閘極。
  14. 如申請專利範圍第1項所述之金氧半場效電晶體元件，其中該基底和該磊晶層的材料包括矽或碳化矽。
  15. 如申請專利範圍第1項所述之金氧半場效電晶體元件，其中該第一導電型為N型，該第二導電型為P型；或該第一導電型為P型，該第二導電型為N型。
TW101141197A 2012-11-06 2012-11-06 金氧半場效電晶體元件 TWI473267B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW101141197A TWI473267B (zh) 2012-11-06 2012-11-06 金氧半場效電晶體元件
US13/914,640 US9018638B2 (en) 2012-11-06 2013-06-11 MOSFET device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW101141197A TWI473267B (zh) 2012-11-06 2012-11-06 金氧半場效電晶體元件

Publications (2)

Publication Number Publication Date
TW201419528A TW201419528A (zh) 2014-05-16
TWI473267B true TWI473267B (zh) 2015-02-11

Family

ID=50621531

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101141197A TWI473267B (zh) 2012-11-06 2012-11-06 金氧半場效電晶體元件

Country Status (2)

Country Link
US (1) US9018638B2 (zh)
TW (1) TWI473267B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9306034B2 (en) * 2014-02-24 2016-04-05 Vanguard International Semiconductor Corporation Method and apparatus for power device with multiple doped regions
US9548354B1 (en) * 2015-12-17 2017-01-17 Vanguard International Semiconductor Corporation Semiconductor devices and methods for fabricating the same
TWI776015B (zh) * 2019-01-30 2022-09-01 晶喬科技股份有限公司 半導體元件的製程開發方法以及系統

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI272679B (en) * 2001-12-31 2007-02-01 Gen Semiconductor Inc Method for fabricating a high voltage power MOSFET having a voltage sustaining region that includes doped columns formed by rapid diffusion
TWI353025B (en) * 2005-08-01 2011-11-21 Semiconductor Components Ind Semiconductor structure with improved on resistanc
TWI371107B (en) * 2007-03-22 2012-08-21 Chao Cheng Lu Power mosfet diode
TWI374474B (en) * 2004-03-11 2012-10-11 Semiconductor Components Ind High voltage lateral fet structure with improved on resistance performance

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6037632A (en) * 1995-11-06 2000-03-14 Kabushiki Kaisha Toshiba Semiconductor device
US7102195B2 (en) 2000-12-20 2006-09-05 Winbond Electronics Corporation Transistor structure for electrostatic discharge protection circuit
US6803626B2 (en) * 2002-07-18 2004-10-12 Fairchild Semiconductor Corporation Vertical charge control semiconductor device
US6465304B1 (en) * 2001-10-04 2002-10-15 General Semiconductor, Inc. Method for fabricating a power semiconductor device having a floating island voltage sustaining layer
US7368777B2 (en) * 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
US8154073B2 (en) 2006-07-14 2012-04-10 Denso Corporation Semiconductor device
JP2008108962A (ja) * 2006-10-26 2008-05-08 Toshiba Corp 半導体装置
US8415671B2 (en) * 2010-04-16 2013-04-09 Cree, Inc. Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
US8525254B2 (en) 2010-08-12 2013-09-03 Infineon Technologies Austria Ag Silicone carbide trench semiconductor device
KR20120056956A (ko) 2010-11-26 2012-06-05 삼성전자주식회사 반도체 장치 및 그 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI272679B (en) * 2001-12-31 2007-02-01 Gen Semiconductor Inc Method for fabricating a high voltage power MOSFET having a voltage sustaining region that includes doped columns formed by rapid diffusion
TWI374474B (en) * 2004-03-11 2012-10-11 Semiconductor Components Ind High voltage lateral fet structure with improved on resistance performance
TWI353025B (en) * 2005-08-01 2011-11-21 Semiconductor Components Ind Semiconductor structure with improved on resistanc
TWI371107B (en) * 2007-03-22 2012-08-21 Chao Cheng Lu Power mosfet diode

Also Published As

Publication number Publication date
US9018638B2 (en) 2015-04-28
US20140124774A1 (en) 2014-05-08
TW201419528A (zh) 2014-05-16

Similar Documents

Publication Publication Date Title
US10453955B2 (en) Lateral DMOS device with dummy gate
US10199456B2 (en) Method of manufacturing a semiconductor device having a charge compensation region underneath a gate trench
US6833585B2 (en) High voltage lateral DMOS transistor having low on-resistance and high breakdown voltage
KR101128694B1 (ko) 반도체 장치
JP5718627B2 (ja) 半導体装置
TWI443827B (zh) 具有構槽邊緣終端結構的半導體裝置
US7928505B2 (en) Semiconductor device with vertical trench and lightly doped region
US9368617B2 (en) Superjunction device and semiconductor structure comprising the same
JP3721172B2 (ja) 半導体装置
US8704304B1 (en) Semiconductor structure
US20130248982A1 (en) Semiconductor device with enhanced mobility and method
US20150380545A1 (en) Power semiconductor device
US8482066B2 (en) Semiconductor device
US10020392B2 (en) Diode, junction field effect transistor, and semiconductor device
US9520493B1 (en) High voltage integrated circuits having improved on-resistance value and improved breakdown voltage
TWI550883B (zh) 橫向雙擴散金氧半導體元件及減少表面電場的結構
CN108258046B (zh) 半导体元件
US20030209741A1 (en) Insulated gate semiconductor device
KR20160108835A (ko) 반도체 장치
TWI473267B (zh) 金氧半場效電晶體元件
US20100244146A1 (en) Semiconductor device and method of manufacturing the same
US8680606B2 (en) Power semiconductor device
JP7487692B2 (ja) 電界効果トランジスタ
KR101127501B1 (ko) 트렌치 게이트 구조를 가지는 전력 반도체 소자
TW201824558A (zh) 半導體元件

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees