JP2024516540A5 - - Google Patents

Info

Publication number
JP2024516540A5
JP2024516540A5 JP2023561208A JP2023561208A JP2024516540A5 JP 2024516540 A5 JP2024516540 A5 JP 2024516540A5 JP 2023561208 A JP2023561208 A JP 2023561208A JP 2023561208 A JP2023561208 A JP 2023561208A JP 2024516540 A5 JP2024516540 A5 JP 2024516540A5
Authority
JP
Japan
Prior art keywords
spiral coil
conductive layers
vias
spiral
coil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023561208A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024516540A (ja
Filing date
Publication date
Priority claimed from US17/226,744 external-priority patent/US12051534B2/en
Application filed filed Critical
Publication of JP2024516540A publication Critical patent/JP2024516540A/ja
Publication of JP2024516540A5 publication Critical patent/JP2024516540A5/ja
Pending legal-status Critical Current

Links

JP2023561208A 2021-04-09 2022-02-08 3次元(3d)垂直スパイラルインダクタおよび変圧器 Pending JP2024516540A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/226,744 2021-04-09
US17/226,744 US12051534B2 (en) 2021-04-09 2021-04-09 Three dimensional (3D) vertical spiral inductor and transformer
PCT/US2022/070566 WO2022217169A1 (en) 2021-04-09 2022-02-08 Three dimensional (3d) vertical spiral inductor and transformer

Publications (2)

Publication Number Publication Date
JP2024516540A JP2024516540A (ja) 2024-04-16
JP2024516540A5 true JP2024516540A5 (enExample) 2025-01-23

Family

ID=80461320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023561208A Pending JP2024516540A (ja) 2021-04-09 2022-02-08 3次元(3d)垂直スパイラルインダクタおよび変圧器

Country Status (8)

Country Link
US (1) US12051534B2 (enExample)
EP (1) EP4320634A1 (enExample)
JP (1) JP2024516540A (enExample)
KR (1) KR20230169949A (enExample)
CN (1) CN117063250A (enExample)
BR (1) BR112023019892A2 (enExample)
TW (1) TW202240614A (enExample)
WO (1) WO2022217169A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12224253B2 (en) * 2021-09-20 2025-02-11 Intel Corporation Magnetic inductor device and method
US12249618B2 (en) * 2022-02-28 2025-03-11 Analog Devices International Unlimited Company Shaped metal edge for galvanic or capacitive isolator
CN118919219A (zh) * 2024-08-13 2024-11-08 成都兴仁科技有限公司 一种三维立体pcb电感的结构

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003051501A (ja) * 2001-05-30 2003-02-21 Mitsubishi Electric Corp 半導体装置及びその製造方法
US6667536B2 (en) * 2001-06-28 2003-12-23 Agere Systems Inc. Thin film multi-layer high Q transformer formed in a semiconductor substrate
US6949442B2 (en) * 2003-05-05 2005-09-27 Infineon Technologies Ag Methods of forming MIM capacitors
TWI226647B (en) * 2003-06-11 2005-01-11 Via Tech Inc Inductor formed between two layout layers
US7253497B2 (en) 2003-07-02 2007-08-07 Lsi Corporation Integrated circuit with inductor having horizontal magnetic flux lines
US6903644B2 (en) * 2003-07-28 2005-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Inductor device having improved quality factor
JP4150689B2 (ja) * 2004-03-29 2008-09-17 富士通株式会社 半導体集積回路装置内に形成された多層配線構造
US7436281B2 (en) * 2004-07-30 2008-10-14 Texas Instruments Incorporated Method to improve inductance with a high-permeability slotted plate core in an integrated circuit
KR100650907B1 (ko) * 2005-12-29 2006-11-28 동부일렉트로닉스 주식회사 구리 금속으로 된 집적회로 인덕터 및 그 제조 방법
US20080204183A1 (en) * 2007-02-23 2008-08-28 Infineon Technologies Ag 3d-coil for saving area used by inductances
US7812424B2 (en) * 2007-12-21 2010-10-12 Infineon Technologies Ag Moisture barrier capacitors in semiconductor components
US8101495B2 (en) * 2008-03-13 2012-01-24 Infineon Technologies Ag MIM capacitors in semiconductor components
US8143987B2 (en) * 2010-04-07 2012-03-27 Xilinx, Inc. Stacked dual inductor structure
JP2012222252A (ja) * 2011-04-12 2012-11-12 Renesas Electronics Corp 半導体装置
US9559053B2 (en) * 2011-04-21 2017-01-31 Taiwan Semiconductor Manufacturing Company, Ltd. Compact vertical inductors extending in vertical planes
JP2013038138A (ja) * 2011-08-04 2013-02-21 Renesas Electronics Corp 半導体装置
US20140203404A1 (en) * 2013-01-21 2014-07-24 Qualcomm Incorporated Spiral metal-on-metal (smom) capacitors, and related systems and methods
US8836079B2 (en) * 2013-01-24 2014-09-16 Qualcomm Incorporated Metal-on-metal (MoM) capacitors having laterally displaced layers, and related systems and methods
US9373434B2 (en) * 2013-06-20 2016-06-21 Taiwan Semiconductor Manufacturing Co., Ltd. Inductor assembly and method of using same
TW201532247A (zh) * 2013-10-16 2015-08-16 康佛森智財管理公司 形成嵌入動態隨機存取記憶體電容器的成本效益佳的方法
TW201545184A (zh) * 2014-05-23 2015-12-01 力晶科技股份有限公司 電容器結構及其製造方法
US9831171B2 (en) * 2014-11-12 2017-11-28 Infineon Technologies Ag Capacitors with barrier dielectric layers, and methods of formation thereof
US10032711B2 (en) * 2016-07-25 2018-07-24 International Business Machines Corporation Integrating metal-insulator-metal capacitors with air gap process flow
US10643782B2 (en) * 2016-10-28 2020-05-05 Delta Electronics (Shanghai) Co., Ltd. Magnetic component and power module
US10559530B2 (en) * 2017-12-27 2020-02-11 International Business Machines Corporation Forming dual metallization interconnect structures in single metallization level
US10686031B2 (en) * 2018-03-27 2020-06-16 Qualcomm Incorporated Finger metal-oxide-metal (FMOM) capacitor
US10553339B1 (en) * 2018-03-30 2020-02-04 Universal Lighting Technologies, Inc. Common-mode choke with integrated RF inductor winding
FR3082046A1 (fr) * 2018-05-30 2019-12-06 Commissariat A L'energie Atomique Et Aux Energies Alternatives Circuit integre comportant une inductance
US10972001B2 (en) * 2018-08-13 2021-04-06 Intel Corporation Multi-terminal inductors for voltage regulators
US11011303B2 (en) * 2018-08-21 2021-05-18 Globalfoundries U.S. Inc. Dummy fill with eddy current self-canceling element for inductor component
JP7163962B2 (ja) * 2018-08-30 2022-11-01 株式会社村田製作所 電力分配/結合回路および電力分配/結合部品
US11004784B2 (en) * 2018-10-12 2021-05-11 Qualcomm Incorporated Metal-on-metal capacitor
US12308309B2 (en) * 2021-11-17 2025-05-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with integrated metal-insulator-metal capacitors

Similar Documents

Publication Publication Date Title
JP2024516540A5 (enExample)
JP6247308B2 (ja) 半導体デバイス上のハイブリッド変圧器構造
US9659850B2 (en) Package substrate comprising capacitor, redistribution layer and discrete coaxial connection
US10115661B2 (en) Substrate-less discrete coupled inductor structure
KR102142937B1 (ko) 매립 수직 커패시터들을 형성하는 방법들 및 그에 의해 형성되는 구조들
US8079134B2 (en) Method of enhancing on-chip inductance structure utilizing silicon through via technology
US9247647B1 (en) High quality factor inductor and high quality factor filter in package substrate or printed circuit board (PCB)
US20090066457A1 (en) Electronic device having transformer
TW201234941A (en) Integrated digital-and radio-frequency system-on-chip devices with integral passive devices in package substrates, and methods of making same
TW202327138A (zh) 多層式晶片內建電感結構
CN117178356A (zh) 金属氧化物金属(mom)电容器中的线路后端(beol)高电阻(hi-r)导体层
WO2016106085A1 (en) Substrate comprising an embedded elongated capacitor
WO2015005977A1 (en) Thick conductive stack plating process with fine critical dimension feature size for compact passive on glass technology
US9373583B2 (en) High quality factor filter implemented in wafer level packaging (WLP) integrated device
CN114300439B (zh) 巴伦集成结构及具有其的产品
US9560745B2 (en) Devices and methods to reduce stress in an electronic device
US9748227B2 (en) Dual-sided silicon integrated passive devices
CN115274271B (zh) 共模滤波器、滤波装置、具有滤波功能的装置及电子设备
TWI836197B (zh) 建構螺線管電感器的方法及以其建構的螺線管電感器
TW200917290A (en) Symmetrical inductor device
US12512401B2 (en) Integrated device substrate including embedded electromagnetic isolation structure
CN118971878B (zh) 一种sar adc分段电容阵列版图结构
CN115064524B (zh) 导电孔阵列电容、制备方法、芯片、制备方法和电子设备
JP2006049486A (ja) 半導体装置およびその製造方法
CN115298775B (zh) 分层工艺构建的双绕组嵌入式螺线管电感器