JP2024501237A - 絶縁トレンチゲート電極を有するパワー半導体デバイスおよびパワー半導体デバイスを製造する方法 - Google Patents

絶縁トレンチゲート電極を有するパワー半導体デバイスおよびパワー半導体デバイスを製造する方法 Download PDF

Info

Publication number
JP2024501237A
JP2024501237A JP2023537636A JP2023537636A JP2024501237A JP 2024501237 A JP2024501237 A JP 2024501237A JP 2023537636 A JP2023537636 A JP 2023537636A JP 2023537636 A JP2023537636 A JP 2023537636A JP 2024501237 A JP2024501237 A JP 2024501237A
Authority
JP
Japan
Prior art keywords
trench
power semiconductor
semiconductor device
extending
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023537636A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024501237A5 (enExample
Inventor
デ－ミキエリス，ルカ
グプタ，ガウラブ
ビターレ，ボルフガング・アマデウス
ブイトラゴ，エリザベス
コルバシェ，キアラ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Energy Ltd
Original Assignee
Hitachi Energy Switzerland AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Energy Switzerland AG filed Critical Hitachi Energy Switzerland AG
Publication of JP2024501237A publication Critical patent/JP2024501237A/ja
Publication of JP2024501237A5 publication Critical patent/JP2024501237A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/232—Emitter electrodes for IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2023537636A 2020-12-21 2021-12-17 絶縁トレンチゲート電極を有するパワー半導体デバイスおよびパワー半導体デバイスを製造する方法 Pending JP2024501237A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP20216115.4A EP4016638A1 (en) 2020-12-21 2020-12-21 Power semiconductor device with an insulated trench gate electrode
EP20216115.4 2020-12-21
PCT/EP2021/086590 WO2022136179A1 (en) 2020-12-21 2021-12-17 Power semiconductor device with an insulated trench gate electrode and method of producing a power semiconductor device

Publications (2)

Publication Number Publication Date
JP2024501237A true JP2024501237A (ja) 2024-01-11
JP2024501237A5 JP2024501237A5 (enExample) 2024-12-20

Family

ID=73856430

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023537636A Pending JP2024501237A (ja) 2020-12-21 2021-12-17 絶縁トレンチゲート電極を有するパワー半導体デバイスおよびパワー半導体デバイスを製造する方法

Country Status (6)

Country Link
US (1) US20240038879A1 (enExample)
EP (1) EP4016638A1 (enExample)
JP (1) JP2024501237A (enExample)
CN (1) CN116636012A (enExample)
DE (1) DE212021000529U1 (enExample)
WO (1) WO2022136179A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4394889A1 (en) * 2022-12-30 2024-07-03 Hitachi Energy Ltd Semiconductor device and method for producing a semiconductor device
EP4394888A1 (en) * 2022-12-30 2024-07-03 Hitachi Energy Ltd Semiconductor device and method for producing a semiconductor device
EP4394881B1 (en) * 2022-12-30 2025-07-30 Hitachi Energy Ltd Semiconductor device and method for producing a semiconductor device
CN116230760A (zh) * 2023-02-23 2023-06-06 成都森未科技有限公司 一种沟槽栅型igbt

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09331062A (ja) * 1996-06-11 1997-12-22 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2016184712A (ja) * 2015-03-27 2016-10-20 株式会社日立製作所 半導体装置及びそれを用いた電力変換装置
JP2017034040A (ja) * 2015-07-30 2017-02-09 ルネサスエレクトロニクス株式会社 半導体装置
JP2017174923A (ja) * 2016-03-23 2017-09-28 ルネサスエレクトロニクス株式会社 半導体装置
JP2018107186A (ja) * 2016-12-22 2018-07-05 ルネサスエレクトロニクス株式会社 トレンチゲートｉｇｂｔ
JP2020107670A (ja) * 2018-12-26 2020-07-09 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2546882B1 (en) * 2010-03-09 2018-04-18 Fuji Electric Co., Ltd. Semiconductor device
JP5621703B2 (ja) * 2011-04-26 2014-11-12 三菱電機株式会社 半導体装置
JP5973730B2 (ja) * 2012-01-05 2016-08-23 ルネサスエレクトロニクス株式会社 Ｉｅ型トレンチゲートｉｇｂｔ
WO2015022989A1 (ja) * 2013-08-15 2015-02-19 富士電機株式会社 半導体装置
CN105745758B (zh) 2013-11-29 2019-05-10 Abb瑞士股份有限公司 绝缘栅双极晶体管
KR101917485B1 (ko) * 2014-01-29 2018-11-09 미쓰비시덴키 가부시키가이샤 전력용 반도체 장치
CN109219888B (zh) * 2016-12-08 2022-03-29 富士电机株式会社 半导体装置
DE102017107174B4 (de) 2017-04-04 2020-10-08 Infineon Technologies Ag IGBT mit dV/dt-Steuerbarkeit und Verfahren zum Verarbeiten eines IGBT
DE102017129955B4 (de) * 2017-12-14 2021-10-07 Infineon Technologies Austria Ag Halbleitervorrichtung mit einem barrierengebiet sowie elektrische vorrichtung

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09331062A (ja) * 1996-06-11 1997-12-22 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2016184712A (ja) * 2015-03-27 2016-10-20 株式会社日立製作所 半導体装置及びそれを用いた電力変換装置
JP2017034040A (ja) * 2015-07-30 2017-02-09 ルネサスエレクトロニクス株式会社 半導体装置
JP2017174923A (ja) * 2016-03-23 2017-09-28 ルネサスエレクトロニクス株式会社 半導体装置
JP2018107186A (ja) * 2016-12-22 2018-07-05 ルネサスエレクトロニクス株式会社 トレンチゲートｉｇｂｔ
JP2020107670A (ja) * 2018-12-26 2020-07-09 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
US20240038879A1 (en) 2024-02-01
CN116636012A (zh) 2023-08-22
WO2022136179A1 (en) 2022-06-30
DE212021000529U1 (de) 2023-12-01
EP4016638A1 (en) 2022-06-22

Similar Documents

Publication Publication Date Title
US11094808B2 (en) Semiconductor device
JP7182594B2 (ja) ゲート・トレンチと、埋め込まれた終端構造とを有するパワー半導体デバイス、及び、関連方法
EP3659180B1 (en) Insulated gate power semiconductor device and method for manufacturing such device
US10600867B2 (en) Semiconductor device having an emitter region and a contact region inside a mesa portion
US10930647B2 (en) Semiconductor device including trenches formed in transistor or diode portions
US11569371B2 (en) Semiconductor device
JP7327672B2 (ja) 半導体装置
JP2024511552A (ja) 信頼性及び導通が向上したトレンチ型パワー・デバイス
US9064952B2 (en) Semiconductor device
CN111081779A (zh) 一种屏蔽栅沟槽式mosfet及其制造方法
JP6698697B2 (ja) 絶縁ゲートパワー半導体デバイスおよびそのデバイスの製造方法
US20240038879A1 (en) Power semiconductor device with an insulated trench gate electrode and method of producing a power semiconductor device
US8829563B2 (en) Power semiconductor device and method for manufacturing such a power semiconductor device
US20230411511A1 (en) Power semiconductor device with dual shield structure in silicon carbide and manufacturing method thereof
EP3154091A1 (en) Reverse-conducting semiconductor device
US10886389B2 (en) Semiconductor device
JP4975618B2 (ja) ショットキー接合を有するデバイス
CN120091612A (zh) 半导体结构元件和用于制造半导体结构元件的方法
US10910486B2 (en) Semiconductor device
CN114402438B (zh) 半导体设备以及用于制造半导体设备的方法
JP7545585B2 (ja) 絶縁トレンチゲート電極を有するパワー半導体デバイス
JP7662431B2 (ja) 半導体装置
KR20190100598A (ko) 향상된 채널 이동도를 갖는 전력 반도체 및 그 제조 방법
JP2021129027A (ja) スイッチング素子
US20230163167A1 (en) Semiconductor device including a trench gate structure

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20240130

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20240205

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240301

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20241211

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20241211

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250603

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20250612

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250828

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20250909

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20260106