CN116636012A - 具有绝缘沟槽栅电极的功率半导体器件和生产功率半导体器件的方法 - Google Patents

具有绝缘沟槽栅电极的功率半导体器件和生产功率半导体器件的方法 Download PDF

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Publication number
CN116636012A
CN116636012A CN202180085877.3A CN202180085877A CN116636012A CN 116636012 A CN116636012 A CN 116636012A CN 202180085877 A CN202180085877 A CN 202180085877A CN 116636012 A CN116636012 A CN 116636012A
Authority
CN
China
Prior art keywords
trench
power semiconductor
semiconductor device
layer
extending
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180085877.3A
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English (en)
Chinese (zh)
Inventor
L·德-米奇伊里斯
G·古普塔
W·A·维塔勒
E·布伊特拉戈
C·科瓦斯塞
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Energy Co ltd
Original Assignee
Hitachi Energy Switzerland AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Energy Switzerland AG filed Critical Hitachi Energy Switzerland AG
Publication of CN116636012A publication Critical patent/CN116636012A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/232—Emitter electrodes for IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN202180085877.3A 2020-12-21 2021-12-17 具有绝缘沟槽栅电极的功率半导体器件和生产功率半导体器件的方法 Pending CN116636012A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP20216115.4A EP4016638A1 (en) 2020-12-21 2020-12-21 Power semiconductor device with an insulated trench gate electrode
EP20216115.4 2020-12-21
PCT/EP2021/086590 WO2022136179A1 (en) 2020-12-21 2021-12-17 Power semiconductor device with an insulated trench gate electrode and method of producing a power semiconductor device

Publications (1)

Publication Number Publication Date
CN116636012A true CN116636012A (zh) 2023-08-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180085877.3A Pending CN116636012A (zh) 2020-12-21 2021-12-17 具有绝缘沟槽栅电极的功率半导体器件和生产功率半导体器件的方法

Country Status (6)

Country Link
US (1) US20240038879A1 (enExample)
EP (1) EP4016638A1 (enExample)
JP (1) JP2024501237A (enExample)
CN (1) CN116636012A (enExample)
DE (1) DE212021000529U1 (enExample)
WO (1) WO2022136179A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4394889A1 (en) * 2022-12-30 2024-07-03 Hitachi Energy Ltd Semiconductor device and method for producing a semiconductor device
EP4394888A1 (en) * 2022-12-30 2024-07-03 Hitachi Energy Ltd Semiconductor device and method for producing a semiconductor device
EP4394881B1 (en) * 2022-12-30 2025-07-30 Hitachi Energy Ltd Semiconductor device and method for producing a semiconductor device
CN116230760A (zh) * 2023-02-23 2023-06-06 成都森未科技有限公司 一种沟槽栅型igbt

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09331062A (ja) * 1996-06-11 1997-12-22 Mitsubishi Electric Corp 半導体装置およびその製造方法
EP2546882B1 (en) * 2010-03-09 2018-04-18 Fuji Electric Co., Ltd. Semiconductor device
JP5621703B2 (ja) * 2011-04-26 2014-11-12 三菱電機株式会社 半導体装置
JP5973730B2 (ja) * 2012-01-05 2016-08-23 ルネサスエレクトロニクス株式会社 Ｉｅ型トレンチゲートｉｇｂｔ
WO2015022989A1 (ja) * 2013-08-15 2015-02-19 富士電機株式会社 半導体装置
CN105745758B (zh) 2013-11-29 2019-05-10 Abb瑞士股份有限公司 绝缘栅双极晶体管
KR101917485B1 (ko) * 2014-01-29 2018-11-09 미쓰비시덴키 가부시키가이샤 전력용 반도체 장치
JP6353804B2 (ja) * 2015-03-27 2018-07-04 株式会社 日立パワーデバイス 半導体装置及びそれを用いた電力変換装置
JP6605870B2 (ja) * 2015-07-30 2019-11-13 ルネサスエレクトロニクス株式会社 半導体装置
JP2017174923A (ja) * 2016-03-23 2017-09-28 ルネサスエレクトロニクス株式会社 半導体装置
CN109219888B (zh) * 2016-12-08 2022-03-29 富士电机株式会社 半导体装置
JP6835568B2 (ja) * 2016-12-22 2021-02-24 ルネサスエレクトロニクス株式会社 トレンチゲートｉｇｂｔ
DE102017107174B4 (de) 2017-04-04 2020-10-08 Infineon Technologies Ag IGBT mit dV/dt-Steuerbarkeit und Verfahren zum Verarbeiten eines IGBT
DE102017129955B4 (de) * 2017-12-14 2021-10-07 Infineon Technologies Austria Ag Halbleitervorrichtung mit einem barrierengebiet sowie elektrische vorrichtung
JP7125339B2 (ja) * 2018-12-26 2022-08-24 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JP2024501237A (ja) 2024-01-11
US20240038879A1 (en) 2024-02-01
WO2022136179A1 (en) 2022-06-30
DE212021000529U1 (de) 2023-12-01
EP4016638A1 (en) 2022-06-22

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Applicant before: Hitachi energy Switzerland AG

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