JP2024145782A5 - - Google Patents

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Publication number
JP2024145782A5
JP2024145782A5 JP2023058279A JP2023058279A JP2024145782A5 JP 2024145782 A5 JP2024145782 A5 JP 2024145782A5 JP 2023058279 A JP2023058279 A JP 2023058279A JP 2023058279 A JP2023058279 A JP 2023058279A JP 2024145782 A5 JP2024145782 A5 JP 2024145782A5
Authority
JP
Japan
Prior art keywords
oxide semiconductor
semiconductor device
semiconductor layer
region
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023058279A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024145782A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2023058279A priority Critical patent/JP2024145782A/ja
Priority claimed from JP2023058279A external-priority patent/JP2024145782A/ja
Priority to DE102024202034.6A priority patent/DE102024202034A1/de
Priority to US18/597,186 priority patent/US20240332308A1/en
Priority to TW113108273A priority patent/TW202441796A/zh
Priority to KR1020240036232A priority patent/KR102947071B1/ko
Priority to CN202410316931.6A priority patent/CN118738137A/zh
Publication of JP2024145782A publication Critical patent/JP2024145782A/ja
Publication of JP2024145782A5 publication Critical patent/JP2024145782A5/ja
Pending legal-status Critical Current

Links

JP2023058279A 2023-03-31 2023-03-31 半導体装置及びその製造方法 Pending JP2024145782A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2023058279A JP2024145782A (ja) 2023-03-31 2023-03-31 半導体装置及びその製造方法
DE102024202034.6A DE102024202034A1 (de) 2023-03-31 2024-03-05 Halbleitervorrichtung und verfahren zu ihrer herstellung
US18/597,186 US20240332308A1 (en) 2023-03-31 2024-03-06 Semiconductor device and manufacturing method thereof
TW113108273A TW202441796A (zh) 2023-03-31 2024-03-07 半導體裝置及其製造方法
KR1020240036232A KR102947071B1 (ko) 2023-03-31 2024-03-15 반도체 장치 및 그 제조 방법
CN202410316931.6A CN118738137A (zh) 2023-03-31 2024-03-19 半导体装置及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2023058279A JP2024145782A (ja) 2023-03-31 2023-03-31 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2024145782A JP2024145782A (ja) 2024-10-15
JP2024145782A5 true JP2024145782A5 (https=) 2026-03-19

Family

ID=92712789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023058279A Pending JP2024145782A (ja) 2023-03-31 2023-03-31 半導体装置及びその製造方法

Country Status (6)

Country Link
US (1) US20240332308A1 (https=)
JP (1) JP2024145782A (https=)
KR (1) KR102947071B1 (https=)
CN (1) CN118738137A (https=)
DE (1) DE102024202034A1 (https=)
TW (1) TW202441796A (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
SG11201505225TA (en) 2012-08-03 2015-08-28 Semiconductor Energy Lab Oxide semiconductor stacked film and semiconductor device
TWI761605B (zh) 2012-09-14 2022-04-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102220279B1 (ko) 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
US9425217B2 (en) 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2015119175A (ja) * 2013-11-15 2015-06-25 株式会社半導体エネルギー研究所 半導体装置及び表示装置
WO2017137869A1 (en) 2016-02-12 2017-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device

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