JPWO2022249872A5 - - Google Patents
Download PDFInfo
- Publication number
- JPWO2022249872A5 JPWO2022249872A5 JP2023523394A JP2023523394A JPWO2022249872A5 JP WO2022249872 A5 JPWO2022249872 A5 JP WO2022249872A5 JP 2023523394 A JP2023523394 A JP 2023523394A JP 2023523394 A JP2023523394 A JP 2023523394A JP WO2022249872 A5 JPWO2022249872 A5 JP WO2022249872A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- semiconductor device
- layer
- semiconductor
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 21
- 238000004519 manufacturing process Methods 0.000 claims 5
- 238000000034 method Methods 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021088679 | 2021-05-26 | ||
| JP2021088679 | 2021-05-26 | ||
| PCT/JP2022/019691 WO2022249872A1 (ja) | 2021-05-26 | 2022-05-09 | 半導体装置、電子デバイス、ｐＨセンサ、バイオセンサ、半導体装置の製造方法、及び電子デバイスの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022249872A1 JPWO2022249872A1 (https=) | 2022-12-01 |
| JPWO2022249872A5 true JPWO2022249872A5 (https=) | 2024-02-26 |
| JP7632606B2 JP7632606B2 (ja) | 2025-02-19 |
Family
ID=84229946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023523394A Active JP7632606B2 (ja) | 2021-05-26 | 2022-05-09 | 半導体装置、電子デバイス、ｐＨセンサ、バイオセンサ、半導体装置の製造方法、及び電子デバイスの製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240201125A1 (https=) |
| JP (1) | JP7632606B2 (https=) |
| KR (1) | KR102813570B1 (https=) |
| CN (1) | CN117716515A (https=) |
| WO (1) | WO2022249872A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20250234597A1 (en) * | 2023-04-28 | 2025-07-17 | Hefei Xinsheng Optoelectronics Technology Co., Ltd. | Thin film transistor and method for manufacturing same, and method for manufacturing display substrate |
| JP7457311B1 (ja) | 2023-09-11 | 2024-03-28 | 株式会社Pxp | 太陽電池及び太陽電池の製造方法 |
| WO2025141646A1 (ja) * | 2023-12-25 | 2025-07-03 | 株式会社ニコン | 半導体装置、電子デバイス、ｐＨセンサ、バイオセンサ、及び半導体装置の製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5095864B2 (ja) | 2009-12-09 | 2012-12-12 | シャープ株式会社 | 半導体装置およびその製造方法 |
| US9356156B2 (en) * | 2013-05-24 | 2016-05-31 | Cbrite Inc. | Stable high mobility MOTFT and fabrication at low temperature |
| US9806200B2 (en) * | 2015-03-27 | 2017-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JPWO2018025647A1 (ja) * | 2016-08-03 | 2019-06-20 | 株式会社ニコン | 半導体装置、ｐＨセンサ、バイオセンサ、及び半導体装置の製造方法 |
| JP7147953B2 (ja) * | 2019-02-25 | 2022-10-05 | 株式会社ニコン | 半導体装置、ｐＨセンサ及びバイオセンサ並びに半導体装置の製造方法 |
-
2022
- 2022-05-09 JP JP2023523394A patent/JP7632606B2/ja active Active
- 2022-05-09 KR KR1020237039432A patent/KR102813570B1/ko active Active
- 2022-05-09 CN CN202280046363.1A patent/CN117716515A/zh active Pending
- 2022-05-09 WO PCT/JP2022/019691 patent/WO2022249872A1/ja not_active Ceased
-
2023
- 2023-11-21 US US18/516,083 patent/US20240201125A1/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPWO2022249872A5 (https=) | ||
| JP2024079844A5 (ja) | 半導体装置の作製方法 | |
| CN102651401B (zh) | 一种薄膜晶体管、阵列基板及其制造方法和显示器件 | |
| TWI397184B (zh) | 氧化物半導體薄膜電晶體 | |
| US9768306B2 (en) | Array substrate and display device | |
| DE602008003796D1 (de) | Tors mit einem oxidhalbleiter | |
| CN103151305B (zh) | 一种薄膜晶体管阵列基板、制备方法以及显示装置 | |
| JP2010093240A5 (https=) | ||
| WO2009041713A3 (en) | Method for manufacturing an oxide semiconductor field-effect transistor | |
| CN107293493A (zh) | 铟镓锌氧化物薄膜晶体管的制作方法 | |
| TW200616079A (en) | Etchant for conductive materials and method of manufacturing a thin film transistor array panel using the same | |
| WO2018010214A1 (zh) | 金属氧化物薄膜晶体管阵列基板的制作方法 | |
| KR20110069454A (ko) | 박막 트랜지스터 및 그 형성방법 | |
| JP2009026800A5 (https=) | ||
| CN102738243B (zh) | 晶体管、阵列基板及其制造方法、液晶面板和显示装置 | |
| WO2018149027A1 (zh) | 一种薄膜晶体管及其制备方法 | |
| JPH10125928A5 (https=) | ||
| CN103474439A (zh) | 一种显示装置、阵列基板及其制作方法 | |
| JP2005109389A5 (https=) | ||
| CN104362180B (zh) | 一种薄膜晶体管及其制作方法、显示基板和显示装置 | |
| CN110646490A (zh) | 一种基于二硒化钨的离子敏场效应晶体管传感器及其制备方法 | |
| KR102097692B1 (ko) | 박막 트랜지스터 및 그 제조 방법 | |
| CN108711548A (zh) | 金属氧化物薄膜晶体管及其制作方法、显示器 | |
| TW201515234A (zh) | 主動元件及其製作方法 | |
| WO2016165511A1 (zh) | 薄膜晶体管及制作方法、阵列基板、显示装置 |