JP7632606B2 - 半導体装置、電子デバイス、ｐＨセンサ、バイオセンサ、半導体装置の製造方法、及び電子デバイスの製造方法 - Google Patents

半導体装置、電子デバイス、ｐＨセンサ、バイオセンサ、半導体装置の製造方法、及び電子デバイスの製造方法 Download PDF

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JP7632606B2
JP7632606B2 JP2023523394A JP2023523394A JP7632606B2 JP 7632606 B2 JP7632606 B2 JP 7632606B2 JP 2023523394 A JP2023523394 A JP 2023523394A JP 2023523394 A JP2023523394 A JP 2023523394A JP 7632606 B2 JP7632606 B2 JP 7632606B2
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electrode
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誠 中積
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Nikon Corp
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    • G—PHYSICS
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    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
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    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/28—Electrolytic cell components
    • G01N27/30—Electrodes, e.g. test electrodes; Half-cells
    • G01N27/327—Biochemical electrodes, e.g. electrical or mechanical details for in vitro measurements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G—PHYSICS
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    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nanotechnology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)
JP2023523394A 2021-05-26 2022-05-09 半導体装置、電子デバイス、ｐＨセンサ、バイオセンサ、半導体装置の製造方法、及び電子デバイスの製造方法 Active JP7632606B2 (ja)

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JP2021088679 2021-05-26
JP2021088679 2021-05-26
PCT/JP2022/019691 WO2022249872A1 (ja) 2021-05-26 2022-05-09 半導体装置、電子デバイス、ｐＨセンサ、バイオセンサ、半導体装置の製造方法、及び電子デバイスの製造方法

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JPWO2022249872A5 JPWO2022249872A5 (https=) 2024-02-26
JP7632606B2 true JP7632606B2 (ja) 2025-02-19

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US (1) US20240201125A1 (https=)
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US20250234597A1 (en) * 2023-04-28 2025-07-17 Hefei Xinsheng Optoelectronics Technology Co., Ltd. Thin film transistor and method for manufacturing same, and method for manufacturing display substrate
JP7457311B1 (ja) 2023-09-11 2024-03-28 株式会社Pxp 太陽電池及び太陽電池の製造方法
WO2025141646A1 (ja) * 2023-12-25 2025-07-03 株式会社ニコン 半導体装置、電子デバイス、ｐＨセンサ、バイオセンサ、及び半導体装置の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016519443A (ja) 2013-05-24 2016-06-30 シーブライト・インコーポレイテッドＣｂｒｉｔｅ Ｉｎｃ． 安定した高移動度のｍｏｔｆｔおよび低温での製作
JP2016189461A (ja) 2015-03-27 2016-11-04 株式会社半導体エネルギー研究所 半導体装置
WO2018025647A1 (ja) 2016-08-03 2018-02-08 株式会社ニコン 半導体装置、ｐＨセンサ、バイオセンサ、及び半導体装置の製造方法
WO2020174540A1 (ja) 2019-02-25 2020-09-03 株式会社ニコン 半導体装置、ｐＨセンサ及びバイオセンサ並びに半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5095864B2 (ja) 2009-12-09 2012-12-12 シャープ株式会社 半導体装置およびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016519443A (ja) 2013-05-24 2016-06-30 シーブライト・インコーポレイテッドＣｂｒｉｔｅ Ｉｎｃ． 安定した高移動度のｍｏｔｆｔおよび低温での製作
JP2016189461A (ja) 2015-03-27 2016-11-04 株式会社半導体エネルギー研究所 半導体装置
WO2018025647A1 (ja) 2016-08-03 2018-02-08 株式会社ニコン 半導体装置、ｐＨセンサ、バイオセンサ、及び半導体装置の製造方法
WO2020174540A1 (ja) 2019-02-25 2020-09-03 株式会社ニコン 半導体装置、ｐＨセンサ及びバイオセンサ並びに半導体装置の製造方法

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US20240201125A1 (en) 2024-06-20
WO2022249872A1 (ja) 2022-12-01
KR102813570B1 (ko) 2025-05-27
CN117716515A (zh) 2024-03-15
JPWO2022249872A1 (https=) 2022-12-01
KR20230169355A (ko) 2023-12-15

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