JP2024026590A - 窒化珪素基板およびその製造方法 - Google Patents

窒化珪素基板およびその製造方法 Download PDF

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JP2024026590A
JP2024026590A JP2023221990A JP2023221990A JP2024026590A JP 2024026590 A JP2024026590 A JP 2024026590A JP 2023221990 A JP2023221990 A JP 2023221990A JP 2023221990 A JP2023221990 A JP 2023221990A JP 2024026590 A JP2024026590 A JP 2024026590A
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silicon nitride
nitride substrate
thickness direction
sintering aid
substrate
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JP2024026590A5 (ja
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恵介 田邉
Keisuke Tanabe
聡平 有馬
Sohei Arima
照久 奥野
Teruhisa Okuno
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Japan Fine Ceramics Co Ltd
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Japan Fine Ceramics Co Ltd
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Priority claimed from JP2021067895A external-priority patent/JP7434208B2/ja
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Priority to JP2024055943A priority Critical patent/JP2024083396A/ja
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JP2023221990A 2020-07-29 2023-12-27 窒化珪素基板およびその製造方法 Pending JP2024026590A (ja)

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WO2023157784A1 (ja) * 2022-02-16 2023-08-24 株式会社Maruwa 窒化ケイ素焼結体、および、窒化ケイ素焼結体の製造方法
JP7455184B1 (ja) 2022-12-23 2024-03-25 株式会社Maruwa 窒化ケイ素薄板及び窒化ケイ素樹脂複合板

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JP3501317B2 (ja) * 1995-07-21 2004-03-02 日産自動車株式会社 高熱伝導率窒化ケイ素質焼結体および窒化ケイ素質焼結体製絶縁基板
JP2002121076A (ja) * 2000-10-10 2002-04-23 Kyocera Corp セラミックスの製造方法とそれを用いて作製したセラミック基板
JP3797905B2 (ja) * 2000-10-27 2006-07-19 株式会社東芝 窒化けい素セラミックス基板およびそれを用いた窒化けい素セラミックス回路基板並びにその製造方法
KR101246978B1 (ko) * 2005-04-28 2013-03-25 히타치 긴조쿠 가부시키가이샤 질화규소 기판, 그 제조방법, 그것을 사용한 질화규소배선기판 및 반도체 모듈
JP5439729B2 (ja) * 2008-03-10 2014-03-12 日立金属株式会社 窒化珪素基板及びその製造方法並びにそれを使用した窒化珪素回路基板及び半導体モジュール
US8916961B2 (en) 2009-07-24 2014-12-23 Kabushiki Kaisha Toshiba Insulation sheet made from silicon nitride, and semiconductor module structure using the same
JP5773330B2 (ja) * 2011-05-12 2015-09-02 三菱マテリアル株式会社 一軸配向した針状Si3N4粒子を含有するセラミックス焼結板
JP5928896B2 (ja) * 2012-10-04 2016-06-01 日立金属株式会社 窒化珪素焼結体およびそれを用いた窒化珪素基板並びにその製造方法
JP6471927B2 (ja) * 2013-08-27 2019-02-20 地方独立行政法人神奈川県立産業技術総合研究所 窒化ケイ素セラミックス基板の製造方法
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