JP2023536361A5 - - Google Patents
Info
- Publication number
- JP2023536361A5 JP2023536361A5 JP2023507872A JP2023507872A JP2023536361A5 JP 2023536361 A5 JP2023536361 A5 JP 2023536361A5 JP 2023507872 A JP2023507872 A JP 2023507872A JP 2023507872 A JP2023507872 A JP 2023507872A JP 2023536361 A5 JP2023536361 A5 JP 2023536361A5
- Authority
- JP
- Japan
- Prior art keywords
- led
- light
- layer
- group iii
- emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2026060025A JP2026113572A (ja) | 2020-08-04 | 2026-04-01 | Ledデバイス及びledデバイスの製造方法 |
Applications Claiming Priority (21)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2012103.4 | 2020-08-04 | ||
| GBGB2012103.4A GB202012103D0 (en) | 2020-08-04 | 2020-08-04 | Semiconductor structure |
| GB2012105.9 | 2020-08-04 | ||
| GBGB2012108.3A GB202012108D0 (en) | 2020-08-04 | 2020-08-04 | Semiconductor structure |
| GB2012098.6 | 2020-08-04 | ||
| GB2012110.9 | 2020-08-04 | ||
| GBGB2012098.6A GB202012098D0 (en) | 2020-08-04 | 2020-08-04 | Semiconductor structure |
| GB2012108.3 | 2020-08-04 | ||
| GBGB2012105.9A GB202012105D0 (en) | 2020-08-04 | 2020-08-04 | Semiconductor structure |
| GBGB2012110.9A GB202012110D0 (en) | 2020-08-04 | 2020-08-04 | Semiconductor structure |
| GB2018016.2 | 2020-11-16 | ||
| GBGB2018016.2A GB202018016D0 (en) | 2020-11-16 | 2020-11-16 | Red led and method of manufacture |
| PCT/GB2021/050158 WO2021148813A1 (en) | 2020-01-22 | 2021-01-22 | Semiconductor structure and method of manufacture |
| GBPCT/GB2021/050152 | 2021-01-22 | ||
| GBPCT/GB2021/050147 | 2021-01-22 | ||
| GBPCT/GB2021/050158 | 2021-01-22 | ||
| PCT/GB2021/050152 WO2021148808A1 (en) | 2020-01-22 | 2021-01-22 | Red led and method of manufacture |
| PCT/GB2021/050147 WO2021148803A1 (en) | 2020-01-22 | 2021-01-22 | Micro-led and manufacturing method thereof |
| GBGB2110882.4A GB202110882D0 (en) | 2020-08-04 | 2021-07-28 | LED and method of manufacture |
| GB2110882.4 | 2021-07-28 | ||
| PCT/GB2021/052020 WO2022029434A1 (en) | 2020-08-04 | 2021-08-04 | Led device and method of manufacturing an led device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2026060025A Division JP2026113572A (ja) | 2020-08-04 | 2026-04-01 | Ledデバイス及びledデバイスの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023536361A JP2023536361A (ja) | 2023-08-24 |
| JP2023536361A5 true JP2023536361A5 (enExample) | 2024-08-14 |
| JP7844440B2 JP7844440B2 (ja) | 2026-04-13 |
Family
ID=80120107
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023507872A Active JP7844440B2 (ja) | 2020-08-04 | 2021-08-04 | Ledデバイス及びledデバイスの製造方法 |
| JP2026060025A Pending JP2026113572A (ja) | 2020-08-04 | 2026-04-01 | Ledデバイス及びledデバイスの製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2026060025A Pending JP2026113572A (ja) | 2020-08-04 | 2026-04-01 | Ledデバイス及びledデバイスの製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US12563866B2 (enExample) |
| EP (2) | EP4193392B1 (enExample) |
| JP (2) | JP7844440B2 (enExample) |
| KR (1) | KR20230058638A (enExample) |
| CN (1) | CN116250091A (enExample) |
| TW (1) | TWI905241B (enExample) |
| WO (1) | WO2022029434A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7469677B2 (ja) * | 2019-11-26 | 2024-04-17 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| TW202315111A (zh) | 2021-07-28 | 2023-04-01 | 英商普羅科技有限公司 | 顯示裝置 |
| GB202213149D0 (en) | 2022-09-08 | 2022-10-26 | Poro Tech Ltd | Method of separating a semiconductor device from a substrate |
| GB202213939D0 (en) | 2022-09-23 | 2022-11-09 | Poro Tech Ltd | Monolithic array of semiconductor devices, display device, template wafer and method of manufacture |
| GB202216889D0 (en) | 2022-11-11 | 2022-12-28 | Poro Tech Ltd | Opto-electronic device and method of manufacturing |
| GB202218165D0 (en) | 2022-12-02 | 2023-01-18 | Poro Tech Ltd | Opto-electronic device having an electrical interconnection layer |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3352118B2 (ja) | 1992-08-25 | 2002-12-03 | キヤノン株式会社 | 半導体装置及びその製造方法 |
| JP4005275B2 (ja) | 1999-08-19 | 2007-11-07 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| JP5379973B2 (ja) | 2004-05-10 | 2013-12-25 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 有機金属気相成長法による非極性窒化インジウムガリウム薄膜、ヘテロ構造物およびデバイスの製作 |
| JP4525500B2 (ja) | 2005-07-14 | 2010-08-18 | パナソニック電工株式会社 | 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法 |
| KR100691444B1 (ko) | 2005-11-19 | 2007-03-09 | 삼성전기주식회사 | 질화물 반도체 발광소자 |
| JP2007173316A (ja) | 2005-12-19 | 2007-07-05 | Matsushita Electric Ind Co Ltd | 窒化物半導体発光素子及びその製造方法 |
| US20090001416A1 (en) | 2007-06-28 | 2009-01-01 | National University Of Singapore | Growth of indium gallium nitride (InGaN) on porous gallium nitride (GaN) template by metal-organic chemical vapor deposition (MOCVD) |
| JP2009021361A (ja) | 2007-07-11 | 2009-01-29 | Sumitomo Electric Ind Ltd | 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法 |
| WO2009038324A2 (en) | 2007-09-18 | 2009-03-26 | Chungbuk National University Industry-Academic Cooperation Foundation | Porous pattern semiconductor structure and semiconductor device and manufacturing method thereof |
| CN101821861B (zh) | 2007-10-12 | 2012-02-01 | 新加坡科技研究局 | 不含磷的基于氮化物的红和白发光二极管的制造 |
| US7928448B2 (en) * | 2007-12-04 | 2011-04-19 | Philips Lumileds Lighting Company, Llc | III-nitride light emitting device including porous semiconductor layer |
| TWI392118B (zh) | 2008-12-04 | 2013-04-01 | 廣鎵光電股份有限公司 | 發光二極體之製造方法及發光二極體 |
| KR20130007557A (ko) | 2010-01-27 | 2013-01-18 | 예일 유니버시티 | GaN 소자의 전도도 기반 선택적 에칭 및 그의 응용 |
| US8575592B2 (en) * | 2010-02-03 | 2013-11-05 | Cree, Inc. | Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses |
| JP5349420B2 (ja) | 2010-08-04 | 2013-11-20 | 株式会社東芝 | 半導体発光素子の製造方法 |
| KR20130066870A (ko) * | 2011-12-13 | 2013-06-21 | 삼성전자주식회사 | 반도체 발광소자 |
| WO2013140320A1 (en) | 2012-03-19 | 2013-09-26 | Koninklijke Philips N.V. | Light emitting device grown on a silicon substrate |
| JP6058946B2 (ja) * | 2012-08-24 | 2017-01-11 | 学校法人 名城大学 | 複数の活性層を有する窒化物半導体素子、窒化物半導体発光素子、窒化物半導体受光素子、及び、窒化物半導体素子の製造方法 |
| JP2014127708A (ja) | 2012-12-27 | 2014-07-07 | Toshiba Corp | 半導体発光素子及び半導体発光素子の製造方法 |
| JP2014187159A (ja) | 2013-03-22 | 2014-10-02 | Rohm Co Ltd | 半導体発光素子 |
| US9048387B2 (en) | 2013-08-09 | 2015-06-02 | Qingdao Jason Electric Co., Ltd. | Light-emitting device with improved light extraction efficiency |
| GB2517197B (en) | 2013-08-15 | 2015-07-29 | Martin Baker Aircraft Co Ltd | A buckle assembly with resetting arrangement |
| EP3201952B1 (en) | 2014-09-30 | 2023-03-29 | Yale University | A method for gan vertical microcavity surface emitting laser |
| US9484492B2 (en) | 2015-01-06 | 2016-11-01 | Apple Inc. | LED structures for reduced non-radiative sidewall recombination |
| US10418519B2 (en) | 2015-12-22 | 2019-09-17 | Apple Inc. | LED sidewall processing to mitigate non-radiative recombination |
| WO2018063391A1 (en) | 2016-09-30 | 2018-04-05 | Intel Corporation | High performance light emitting diode and monolithic multi-color pixel |
| EP3529838B1 (en) | 2016-10-24 | 2022-02-23 | Nanosys, Inc. | Indium gallium nitride red light emitting diode and method of making thereof |
| US10708995B2 (en) | 2017-05-12 | 2020-07-07 | The Regents Of The University Of Michigan | Color mixing monolithically integrated light-emitting diode pixels |
| US10734545B2 (en) | 2017-06-21 | 2020-08-04 | The Regents Of The University Of Michigan | Monolithically integrated InGaN/GaN quantum nanowire devices |
| US20200152841A1 (en) * | 2017-07-31 | 2020-05-14 | Yale University | Nanoporous micro-led devices and methods for making |
| US10439101B2 (en) | 2017-08-18 | 2019-10-08 | Intel Corporation | Micro light-emitting diode (LED) elements and display |
| JP7062757B2 (ja) | 2017-09-27 | 2022-05-06 | ケンブリッジ エンタープライズ リミテッド | 材料および半導体構造を多孔質化する方法 |
| US11005004B2 (en) | 2017-10-20 | 2021-05-11 | Korea Advanced Institute Of Science And Technology | Micro light emitting diode (LED) structure, method for manufacturing the same and display including the same |
| CN107946417B (zh) | 2017-11-29 | 2019-09-03 | 北京工业大学 | 一种全色微型led阵列垂直外延制备方法 |
| CN110034216A (zh) | 2018-01-12 | 2019-07-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | Iii-v族氮化物深紫外发光二极管结构及其制作方法 |
| GB201801337D0 (en) * | 2018-01-26 | 2018-03-14 | Cambridge Entpr Ltd | Method for etching a semiconductor structure |
| CN108520911A (zh) | 2018-04-11 | 2018-09-11 | 山东大学 | 一种具有纳米多孔GaN分布布拉格反射镜的InGaN基蓝光发光二极管的制备方法 |
-
2021
- 2021-08-03 TW TW110128574A patent/TWI905241B/zh active
- 2021-08-04 WO PCT/GB2021/052020 patent/WO2022029434A1/en not_active Ceased
- 2021-08-04 KR KR1020237007769A patent/KR20230058638A/ko active Pending
- 2021-08-04 JP JP2023507872A patent/JP7844440B2/ja active Active
- 2021-08-04 CN CN202180067709.1A patent/CN116250091A/zh active Pending
- 2021-08-04 EP EP21752135.0A patent/EP4193392B1/en active Active
- 2021-08-04 US US18/040,542 patent/US12563866B2/en active Active
- 2021-08-04 EP EP25189661.9A patent/EP4608102A3/en active Pending
-
2026
- 2026-01-27 US US19/461,257 patent/US20260231564A1/en active Pending
- 2026-04-01 JP JP2026060025A patent/JP2026113572A/ja active Pending
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