JP7844440B2 - Ｌｅｄデバイス及びｌｅｄデバイスの製造方法 - Google Patents

Ｌｅｄデバイス及びｌｅｄデバイスの製造方法

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Publication number
JP7844440B2
JP7844440B2 JP2023507872A JP2023507872A JP7844440B2 JP 7844440 B2 JP7844440 B2 JP 7844440B2 JP 2023507872 A JP2023507872 A JP 2023507872A JP 2023507872 A JP2023507872 A JP 2023507872A JP 7844440 B2 JP7844440 B2 JP 7844440B2
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Prior art keywords
led
light
layer
region
porous
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
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JP2023507872A
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English (en)
Japanese (ja)
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JP2023536361A (ja
JP2023536361A5 (enExample
Inventor
ズー，トントン
リュー，インジュン
アリー，ムハンマド
Original Assignee
ポロ テクノロジーズ リミテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB2012103.4A external-priority patent/GB202012103D0/en
Priority claimed from GBGB2012110.9A external-priority patent/GB202012110D0/en
Priority claimed from GBGB2012105.9A external-priority patent/GB202012105D0/en
Priority claimed from GBGB2012098.6A external-priority patent/GB202012098D0/en
Priority claimed from GBGB2012108.3A external-priority patent/GB202012108D0/en
Priority claimed from GBGB2018016.2A external-priority patent/GB202018016D0/en
Priority claimed from PCT/GB2021/050158 external-priority patent/WO2021148813A1/en
Priority claimed from PCT/GB2021/050147 external-priority patent/WO2021148803A1/en
Priority claimed from GBGB2110882.4A external-priority patent/GB202110882D0/en
Application filed by ポロ テクノロジーズ リミテッド filed Critical ポロ テクノロジーズ リミテッド
Publication of JP2023536361A publication Critical patent/JP2023536361A/ja
Publication of JP2023536361A5 publication Critical patent/JP2023536361A5/ja
Priority to JP2026060025A priority Critical patent/JP2026113572A/ja
Publication of JP7844440B2 publication Critical patent/JP7844440B2/ja
Application granted granted Critical
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/012—Manufacture or treatment of active-matrix LED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30—Active-matrix LED displays

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  • Led Devices (AREA)
JP2023507872A 2020-08-04 2021-08-04 Ｌｅｄデバイス及びｌｅｄデバイスの製造方法 Active JP7844440B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2026060025A JP2026113572A (ja) 2020-08-04 2026-04-01 Ｌｅｄデバイス及びｌｅｄデバイスの製造方法

Applications Claiming Priority (21)

Application Number Priority Date Filing Date Title
GB2012103.4 2020-08-04
GBGB2012103.4A GB202012103D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GB2012105.9 2020-08-04
GBGB2012108.3A GB202012108D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GB2012098.6 2020-08-04
GB2012110.9 2020-08-04
GBGB2012098.6A GB202012098D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GB2012108.3 2020-08-04
GBGB2012105.9A GB202012105D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GBGB2012110.9A GB202012110D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GB2018016.2 2020-11-16
GBGB2018016.2A GB202018016D0 (en) 2020-11-16 2020-11-16 Red led and method of manufacture
PCT/GB2021/050158 WO2021148813A1 (en) 2020-01-22 2021-01-22 Semiconductor structure and method of manufacture
GBPCT/GB2021/050152 2021-01-22
GBPCT/GB2021/050147 2021-01-22
GBPCT/GB2021/050158 2021-01-22
PCT/GB2021/050152 WO2021148808A1 (en) 2020-01-22 2021-01-22 Red led and method of manufacture
PCT/GB2021/050147 WO2021148803A1 (en) 2020-01-22 2021-01-22 Micro-led and manufacturing method thereof
GBGB2110882.4A GB202110882D0 (en) 2020-08-04 2021-07-28 LED and method of manufacture
GB2110882.4 2021-07-28
PCT/GB2021/052020 WO2022029434A1 (en) 2020-08-04 2021-08-04 Led device and method of manufacturing an led device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2026060025A Division JP2026113572A (ja) 2020-08-04 2026-04-01 Ｌｅｄデバイス及びｌｅｄデバイスの製造方法

Publications (3)

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JP2023536361A JP2023536361A (ja) 2023-08-24
JP2023536361A5 JP2023536361A5 (enExample) 2024-08-14
JP7844440B2 true JP7844440B2 (ja) 2026-04-13

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JP2023507872A Active JP7844440B2 (ja) 2020-08-04 2021-08-04 Ｌｅｄデバイス及びｌｅｄデバイスの製造方法
JP2026060025A Pending JP2026113572A (ja) 2020-08-04 2026-04-01 Ｌｅｄデバイス及びｌｅｄデバイスの製造方法

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Country Status (7)

Country Link
US (2) US12563866B2 (enExample)
EP (2) EP4193392B1 (enExample)
JP (2) JP7844440B2 (enExample)
KR (1) KR20230058638A (enExample)
CN (1) CN116250091A (enExample)
TW (1) TWI905241B (enExample)
WO (1) WO2022029434A1 (enExample)

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TW202315111A (zh) 2021-07-28 2023-04-01 英商普羅科技有限公司 顯示裝置
GB202213149D0 (en) 2022-09-08 2022-10-26 Poro Tech Ltd Method of separating a semiconductor device from a substrate
GB202213939D0 (en) 2022-09-23 2022-11-09 Poro Tech Ltd Monolithic array of semiconductor devices, display device, template wafer and method of manufacture
GB202216889D0 (en) 2022-11-11 2022-12-28 Poro Tech Ltd Opto-electronic device and method of manufacturing
GB202218165D0 (en) 2022-12-02 2023-01-18 Poro Tech Ltd Opto-electronic device having an electrical interconnection layer

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Also Published As

Publication number Publication date
JP2023536361A (ja) 2023-08-24
EP4608102A3 (en) 2025-11-12
KR20230058638A (ko) 2023-05-03
EP4193392A1 (en) 2023-06-14
CN116250091A (zh) 2023-06-09
TW202221938A (zh) 2022-06-01
US12563866B2 (en) 2026-02-24
JP2026113572A (ja) 2026-07-07
US20230290903A1 (en) 2023-09-14
US20260231564A1 (en) 2026-08-06
WO2022029434A1 (en) 2022-02-10
TWI905241B (zh) 2025-11-21
EP4608102A2 (en) 2025-08-27
EP4193392B1 (en) 2025-07-16

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