CN116250091A - Led装置及制造led装置的方法 - Google Patents

Led装置及制造led装置的方法 Download PDF

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Publication number
CN116250091A
CN116250091A CN202180067709.1A CN202180067709A CN116250091A CN 116250091 A CN116250091 A CN 116250091A CN 202180067709 A CN202180067709 A CN 202180067709A CN 116250091 A CN116250091 A CN 116250091A
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CN
China
Prior art keywords
led
layer
region
light emitting
porous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180067709.1A
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English (en)
Chinese (zh)
Inventor
朱彤彤
刘颖俊
穆罕默德·阿里
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bora Technology Co ltd
Original Assignee
Bora Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB2012103.4A external-priority patent/GB202012103D0/en
Priority claimed from GBGB2012108.3A external-priority patent/GB202012108D0/en
Priority claimed from GBGB2012098.6A external-priority patent/GB202012098D0/en
Priority claimed from GBGB2012105.9A external-priority patent/GB202012105D0/en
Priority claimed from GBGB2012110.9A external-priority patent/GB202012110D0/en
Priority claimed from GBGB2018016.2A external-priority patent/GB202018016D0/en
Priority claimed from PCT/GB2021/050158 external-priority patent/WO2021148813A1/en
Priority claimed from PCT/GB2021/050147 external-priority patent/WO2021148803A1/en
Priority claimed from GBGB2110882.4A external-priority patent/GB202110882D0/en
Application filed by Bora Technology Co ltd filed Critical Bora Technology Co ltd
Publication of CN116250091A publication Critical patent/CN116250091A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/012—Manufacture or treatment of active-matrix LED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30—Active-matrix LED displays

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  • Led Devices (AREA)
CN202180067709.1A 2020-08-04 2021-08-04 Led装置及制造led装置的方法 Pending CN116250091A (zh)

Applications Claiming Priority (21)

Application Number Priority Date Filing Date Title
GB2012103.4 2020-08-04
GBGB2012103.4A GB202012103D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GB2012105.9 2020-08-04
GBGB2012108.3A GB202012108D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GB2012098.6 2020-08-04
GB2012110.9 2020-08-04
GBGB2012098.6A GB202012098D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GB2012108.3 2020-08-04
GBGB2012105.9A GB202012105D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GBGB2012110.9A GB202012110D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GB2018016.2 2020-11-16
GBGB2018016.2A GB202018016D0 (en) 2020-11-16 2020-11-16 Red led and method of manufacture
PCT/GB2021/050158 WO2021148813A1 (en) 2020-01-22 2021-01-22 Semiconductor structure and method of manufacture
GBPCT/GB2021/050152 2021-01-22
GBPCT/GB2021/050147 2021-01-22
GBPCT/GB2021/050158 2021-01-22
PCT/GB2021/050152 WO2021148808A1 (en) 2020-01-22 2021-01-22 Red led and method of manufacture
PCT/GB2021/050147 WO2021148803A1 (en) 2020-01-22 2021-01-22 Micro-led and manufacturing method thereof
GBGB2110882.4A GB202110882D0 (en) 2020-08-04 2021-07-28 LED and method of manufacture
GB2110882.4 2021-07-28
PCT/GB2021/052020 WO2022029434A1 (en) 2020-08-04 2021-08-04 Led device and method of manufacturing an led device

Publications (1)

Publication Number Publication Date
CN116250091A true CN116250091A (zh) 2023-06-09

Family

ID=80120107

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180067709.1A Pending CN116250091A (zh) 2020-08-04 2021-08-04 Led装置及制造led装置的方法

Country Status (7)

Country Link
US (2) US12563866B2 (enExample)
EP (2) EP4193392B1 (enExample)
JP (2) JP7844440B2 (enExample)
KR (1) KR20230058638A (enExample)
CN (1) CN116250091A (enExample)
TW (1) TWI905241B (enExample)
WO (1) WO2022029434A1 (enExample)

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TW202315111A (zh) 2021-07-28 2023-04-01 英商普羅科技有限公司 顯示裝置
GB202213149D0 (en) 2022-09-08 2022-10-26 Poro Tech Ltd Method of separating a semiconductor device from a substrate
GB202213939D0 (en) 2022-09-23 2022-11-09 Poro Tech Ltd Monolithic array of semiconductor devices, display device, template wafer and method of manufacture
GB202216889D0 (en) 2022-11-11 2022-12-28 Poro Tech Ltd Opto-electronic device and method of manufacturing
GB202218165D0 (en) 2022-12-02 2023-01-18 Poro Tech Ltd Opto-electronic device having an electrical interconnection layer

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JP2023536361A (ja) 2023-08-24
EP4608102A3 (en) 2025-11-12
JP7844440B2 (ja) 2026-04-13
KR20230058638A (ko) 2023-05-03
EP4193392A1 (en) 2023-06-14
TW202221938A (zh) 2022-06-01
US12563866B2 (en) 2026-02-24
JP2026113572A (ja) 2026-07-07
US20230290903A1 (en) 2023-09-14
US20260231564A1 (en) 2026-08-06
WO2022029434A1 (en) 2022-02-10
TWI905241B (zh) 2025-11-21
EP4608102A2 (en) 2025-08-27
EP4193392B1 (en) 2025-07-16

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