TWI905241B - Ｌｅｄ及製造方法 - Google Patents

Ｌｅｄ及製造方法

Info

Publication number
TWI905241B
TWI905241B TW110128574A TW110128574A TWI905241B TW I905241 B TWI905241 B TW I905241B TW 110128574 A TW110128574 A TW 110128574A TW 110128574 A TW110128574 A TW 110128574A TW I905241 B TWI905241 B TW I905241B
Authority
TW
Taiwan
Prior art keywords
led
layer
region
porous
group iii
Prior art date
Application number
TW110128574A
Other languages
English (en)
Chinese (zh)
Other versions
TW202221938A (zh
Inventor
朱彤彤
劉穎俊
穆罕默德 阿里
Original Assignee
英商普羅科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB2012108.3A external-priority patent/GB202012108D0/en
Priority claimed from GBGB2012103.4A external-priority patent/GB202012103D0/en
Priority claimed from GBGB2012110.9A external-priority patent/GB202012110D0/en
Priority claimed from GBGB2012105.9A external-priority patent/GB202012105D0/en
Priority claimed from GBGB2012098.6A external-priority patent/GB202012098D0/en
Priority claimed from GBGB2018016.2A external-priority patent/GB202018016D0/en
Priority claimed from PCT/GB2021/050158 external-priority patent/WO2021148813A1/en
Priority claimed from PCT/GB2021/050147 external-priority patent/WO2021148803A1/en
Priority claimed from GBGB2110882.4A external-priority patent/GB202110882D0/en
Application filed by 英商普羅科技有限公司 filed Critical 英商普羅科技有限公司
Publication of TW202221938A publication Critical patent/TW202221938A/zh
Publication of TWI905241B publication Critical patent/TWI905241B/zh
Application granted granted Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/012—Manufacture or treatment of active-matrix LED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30—Active-matrix LED displays

Landscapes

  • Led Devices (AREA)
TW110128574A 2020-08-04 2021-08-03 Ｌｅｄ及製造方法 TWI905241B (zh)

Applications Claiming Priority (20)

Application Number Priority Date Filing Date Title
GBGB2012098.6A GB202012098D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GB2012103.4 2020-08-04
GB2012105.9 2020-08-04
GB2012098.6 2020-08-04
GB2012110.9 2020-08-04
GBGB2012108.3A GB202012108D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GB2012108.3 2020-08-04
GBGB2012105.9A GB202012105D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GBGB2012110.9A GB202012110D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GBGB2012103.4A GB202012103D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GB2018016.2 2020-11-16
GBGB2018016.2A GB202018016D0 (en) 2020-11-16 2020-11-16 Red led and method of manufacture
WOPCT/GB2021/050158 2021-01-22
PCT/GB2021/050158 WO2021148813A1 (en) 2020-01-22 2021-01-22 Semiconductor structure and method of manufacture
WOPCT/GB2021/050152 2021-01-22
WOPCT/GB2021/050147 2021-01-22
PCT/GB2021/050152 WO2021148808A1 (en) 2020-01-22 2021-01-22 Red led and method of manufacture
PCT/GB2021/050147 WO2021148803A1 (en) 2020-01-22 2021-01-22 Micro-led and manufacturing method thereof
GBGB2110882.4A GB202110882D0 (en) 2020-08-04 2021-07-28 LED and method of manufacture
GB2110882.4 2021-07-28

Publications (2)

Publication Number Publication Date
TW202221938A TW202221938A (zh) 2022-06-01
TWI905241B true TWI905241B (zh) 2025-11-21

Family

ID=80120107

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110128574A TWI905241B (zh) 2020-08-04 2021-08-03 Ｌｅｄ及製造方法

Country Status (7)

Country Link
US (2) US12563866B2 (enExample)
EP (2) EP4193392B1 (enExample)
JP (2) JP7844440B2 (enExample)
KR (1) KR20230058638A (enExample)
CN (1) CN116250091A (enExample)
TW (1) TWI905241B (enExample)
WO (1) WO2022029434A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7469677B2 (ja) * 2019-11-26 2024-04-17 日亜化学工業株式会社 窒化物半導体素子
TW202315111A (zh) 2021-07-28 2023-04-01 英商普羅科技有限公司 顯示裝置
GB202213149D0 (en) 2022-09-08 2022-10-26 Poro Tech Ltd Method of separating a semiconductor device from a substrate
GB202213939D0 (en) 2022-09-23 2022-11-09 Poro Tech Ltd Monolithic array of semiconductor devices, display device, template wafer and method of manufacture
GB202216889D0 (en) 2022-11-11 2022-12-28 Poro Tech Ltd Opto-electronic device and method of manufacturing
GB202218165D0 (en) 2022-12-02 2023-01-18 Poro Tech Ltd Opto-electronic device having an electrical interconnection layer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110193059A1 (en) * 2007-12-04 2011-08-11 Koninklijke Philips Electronics N.V. III-Nitride Light Emitting Device Including Porous Semiconductor
TW201208112A (en) * 2010-02-03 2012-02-16 Cree Inc Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
US20130146842A1 (en) * 2011-12-13 2013-06-13 Samsung Electronics Co., Ltd. Semiconductor light emitting device

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3352118B2 (ja) 1992-08-25 2002-12-03 キヤノン株式会社 半導体装置及びその製造方法
JP4005275B2 (ja) 1999-08-19 2007-11-07 日亜化学工業株式会社 窒化物半導体素子
JP5379973B2 (ja) 2004-05-10 2013-12-25 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 有機金属気相成長法による非極性窒化インジウムガリウム薄膜、ヘテロ構造物およびデバイスの製作
JP4525500B2 (ja) 2005-07-14 2010-08-18 パナソニック電工株式会社 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法
KR100691444B1 (ko) 2005-11-19 2007-03-09 삼성전기주식회사 질화물 반도체 발광소자
JP2007173316A (ja) 2005-12-19 2007-07-05 Matsushita Electric Ind Co Ltd 窒化物半導体発光素子及びその製造方法
US20090001416A1 (en) 2007-06-28 2009-01-01 National University Of Singapore Growth of indium gallium nitride (InGaN) on porous gallium nitride (GaN) template by metal-organic chemical vapor deposition (MOCVD)
JP2009021361A (ja) 2007-07-11 2009-01-29 Sumitomo Electric Ind Ltd 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法
WO2009038324A2 (en) 2007-09-18 2009-03-26 Chungbuk National University Industry-Academic Cooperation Foundation Porous pattern semiconductor structure and semiconductor device and manufacturing method thereof
CN101821861B (zh) 2007-10-12 2012-02-01 新加坡科技研究局 不含磷的基于氮化物的红和白发光二极管的制造
TWI392118B (zh) 2008-12-04 2013-04-01 廣鎵光電股份有限公司 發光二極體之製造方法及發光二極體
KR20130007557A (ko) 2010-01-27 2013-01-18 예일 유니버시티 ＧａＮ 소자의 전도도 기반 선택적 에칭 및 그의 응용
JP5349420B2 (ja) 2010-08-04 2013-11-20 株式会社東芝 半導体発光素子の製造方法
WO2013140320A1 (en) 2012-03-19 2013-09-26 Koninklijke Philips N.V. Light emitting device grown on a silicon substrate
JP6058946B2 (ja) * 2012-08-24 2017-01-11 学校法人 名城大学 複数の活性層を有する窒化物半導体素子、窒化物半導体発光素子、窒化物半導体受光素子、及び、窒化物半導体素子の製造方法
JP2014127708A (ja) 2012-12-27 2014-07-07 Toshiba Corp 半導体発光素子及び半導体発光素子の製造方法
JP2014187159A (ja) 2013-03-22 2014-10-02 Rohm Co Ltd 半導体発光素子
US9048387B2 (en) 2013-08-09 2015-06-02 Qingdao Jason Electric Co., Ltd. Light-emitting device with improved light extraction efficiency
GB2517197B (en) 2013-08-15 2015-07-29 Martin Baker Aircraft Co Ltd A buckle assembly with resetting arrangement
EP3201952B1 (en) 2014-09-30 2023-03-29 Yale University A method for gan vertical microcavity surface emitting laser
US9484492B2 (en) 2015-01-06 2016-11-01 Apple Inc. LED structures for reduced non-radiative sidewall recombination
US10418519B2 (en) 2015-12-22 2019-09-17 Apple Inc. LED sidewall processing to mitigate non-radiative recombination
WO2018063391A1 (en) 2016-09-30 2018-04-05 Intel Corporation High performance light emitting diode and monolithic multi-color pixel
EP3529838B1 (en) 2016-10-24 2022-02-23 Nanosys, Inc. Indium gallium nitride red light emitting diode and method of making thereof
US10708995B2 (en) 2017-05-12 2020-07-07 The Regents Of The University Of Michigan Color mixing monolithically integrated light-emitting diode pixels
US10734545B2 (en) 2017-06-21 2020-08-04 The Regents Of The University Of Michigan Monolithically integrated InGaN/GaN quantum nanowire devices
US20200152841A1 (en) * 2017-07-31 2020-05-14 Yale University Nanoporous micro-led devices and methods for making
US10439101B2 (en) 2017-08-18 2019-10-08 Intel Corporation Micro light-emitting diode (LED) elements and display
JP7062757B2 (ja) 2017-09-27 2022-05-06 ケンブリッジ エンタープライズ リミテッド 材料および半導体構造を多孔質化する方法
US11005004B2 (en) 2017-10-20 2021-05-11 Korea Advanced Institute Of Science And Technology Micro light emitting diode (LED) structure, method for manufacturing the same and display including the same
CN107946417B (zh) 2017-11-29 2019-09-03 北京工业大学 一种全色微型led阵列垂直外延制备方法
CN110034216A (zh) 2018-01-12 2019-07-19 中国科学院苏州纳米技术与纳米仿生研究所 Iii-v族氮化物深紫外发光二极管结构及其制作方法
GB201801337D0 (en) * 2018-01-26 2018-03-14 Cambridge Entpr Ltd Method for etching a semiconductor structure
CN108520911A (zh) 2018-04-11 2018-09-11 山东大学 一种具有纳米多孔GaN分布布拉格反射镜的InGaN基蓝光发光二极管的制备方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110193059A1 (en) * 2007-12-04 2011-08-11 Koninklijke Philips Electronics N.V. III-Nitride Light Emitting Device Including Porous Semiconductor
TW201208112A (en) * 2010-02-03 2012-02-16 Cree Inc Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
US20130146842A1 (en) * 2011-12-13 2013-06-13 Samsung Electronics Co., Ltd. Semiconductor light emitting device

Also Published As

Publication number Publication date
JP2023536361A (ja) 2023-08-24
EP4608102A3 (en) 2025-11-12
JP7844440B2 (ja) 2026-04-13
KR20230058638A (ko) 2023-05-03
EP4193392A1 (en) 2023-06-14
CN116250091A (zh) 2023-06-09
TW202221938A (zh) 2022-06-01
US12563866B2 (en) 2026-02-24
JP2026113572A (ja) 2026-07-07
US20230290903A1 (en) 2023-09-14
US20260231564A1 (en) 2026-08-06
WO2022029434A1 (en) 2022-02-10
EP4608102A2 (en) 2025-08-27
EP4193392B1 (en) 2025-07-16

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