JP2023517166A - ウエハー縁欠陥検査装置及び検査方法 - Google Patents
ウエハー縁欠陥検査装置及び検査方法 Download PDFInfo
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- JP2023517166A JP2023517166A JP2022543093A JP2022543093A JP2023517166A JP 2023517166 A JP2023517166 A JP 2023517166A JP 2022543093 A JP2022543093 A JP 2022543093A JP 2022543093 A JP2022543093 A JP 2022543093A JP 2023517166 A JP2023517166 A JP 2023517166A
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- 238000007689 inspection Methods 0.000 title claims abstract description 120
- 230000007547 defect Effects 0.000 title claims abstract description 112
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000003708 edge detection Methods 0.000 claims abstract description 12
- 235000012431 wafers Nutrition 0.000 claims description 300
- 238000012546 transfer Methods 0.000 claims description 23
- 238000010586 diagram Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 229910052710 silicon Inorganic materials 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- 238000005286 illumination Methods 0.000 description 15
- 238000001514 detection method Methods 0.000 description 12
- 238000003384 imaging method Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9503—Wafer edge inspection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
(特許文献2)KR10-2016-0068228A(2016年06月15日)
(特許文献3)KR10-2010-0023861A(2010年03月04日)
(特許文献4)KR10-2013-0049359A(2013年05月14日)
111:平面 112:裏面
113:垂直面 114:第1境界面
115:第2境界面 200:ウエハー把持部
210:接触体 220:ホルダー締結体
230:ホルダーアクチュエータ 240:駆動モーター
250:ホルダー作動カム 300:エッジ検測部
310:ライト 320:カメラ
321:第1カメラ 322:第2カメラ
330:検測ハウジング 331:反射部
332:拡散板 341:第1移送装置
342:第1移動制御器 351:照度器
352:照度制御器 361:第2移送装置
362:位置測定センサー 363:移送制御器
410:制御部 420:焦点制御器
430:レンズ駆動装置 510:ケース
S100:移送段階 S200:把持段階
S300:検知段階 S310:部分離脱段階
S320:照明段階 S330:撮影段階
S340:焦点調節段階 S350:照度調節段階
S500:欠陥判断段階S 410:ウエハー回転段階
S420:ウエハー移動段階
Claims (6)
- 板材形状のウエハー(100);
前記ウエハー(100)を固定するウエハー把持部(200);
前記ウエハー縁(110)の欠陥を検測するエッジ検測部(300);を含むウエハー縁欠陥検査装置。 - 前記ウエハー把持部(200)は、複数で設けられ、前記ウエハー(100)の面及び/又は縁と接触する接触体(210);を含む、請求項1に記載のウエハー縁欠陥検査装置。
- 前記エッジ検測部(300)は、一定の照度の光を前記縁に発光するライト310;
前記ウエハー縁(110)を撮影するカメラ(320);を含む、請求項2に記載のウエハー縁欠陥検査装置。 - 前記カメラ(320)の画像情報を受信し、ウエハー縁(110)の欠陥の有無を判別する制御部(410);を含む、請求項3に記載のウエハー縁欠陥検査装置。
- 内部空間を形成し、前記ウエハー把持部(200)及び前記エッジ検測部(300)を収容するケース(510);
前記ケース(510)の外部と結合し、複数のウエハー(100)を収容するウエハーカートリッジ(520);
前記ウエハーカートリッジ(520)及び前記ウエハー把持部(200)にウエハー(100)を移送する移送ロボット(530);を含む、請求項1に記載のウエハー縁欠陥検査装置。 - ウエハー縁欠陥検査方法であって、
ウエハー(100)をウエハー把持部(200)に移送する移送段階(S100);
前記移送段階(S100)後に、ウエハー(100)の縁を把持する把持段階(S200);
前記把持段階(S200)後に、ウエハー縁(110)を検知する検知段階(S300);を含むウエハー縁欠陥検査方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2020-0005414 | 2020-01-15 | ||
KR1020200005414A KR102453258B1 (ko) | 2020-01-15 | 2020-01-15 | 웨이퍼 모서리 결함 검사장치 및 검사방법 |
PCT/KR2020/007577 WO2021145516A1 (ko) | 2020-01-15 | 2020-06-11 | 웨이퍼 모서리 결함 검사장치 및 검사방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2023517166A true JP2023517166A (ja) | 2023-04-24 |
JP7453494B2 JP7453494B2 (ja) | 2024-03-21 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2022543093A Active JP7453494B2 (ja) | 2020-01-15 | 2020-06-11 | ウエハー縁欠陥検査装置及び検査方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7453494B2 (ja) |
KR (1) | KR102453258B1 (ja) |
CN (1) | CN115088060A (ja) |
WO (1) | WO2021145516A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113884506A (zh) * | 2021-09-15 | 2022-01-04 | 杭州中欣晶圆半导体股份有限公司 | 一种硅片边缘及表面自动化视觉检测系统及检测方法 |
CN114088724B (zh) * | 2021-11-20 | 2023-08-18 | 深圳市北科检测科技有限公司 | 一种显示屏边缘缺陷检测装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012216754A (ja) * | 2011-03-30 | 2012-11-08 | Dainippon Screen Mfg Co Ltd | 基板検査装置および基板検査方法 |
JP2013527925A (ja) * | 2010-05-06 | 2013-07-04 | アルタテック・セミコンダクター | 移動中半導体ウエハの検査装置およびその方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3629244B2 (ja) * | 2002-02-19 | 2005-03-16 | 本多エレクトロン株式会社 | ウエーハ用検査装置 |
JP4358889B1 (ja) | 2008-06-27 | 2009-11-04 | 日本エレクトロセンサリデバイス株式会社 | ウエーハ欠陥検査装置 |
KR101001113B1 (ko) | 2008-11-12 | 2010-12-14 | 주식회사 코로 | 웨이퍼 결함의 검사장치 및 검사방법 |
KR101207470B1 (ko) * | 2010-11-16 | 2012-12-03 | 한미반도체 주식회사 | 웨이퍼 검사장치 및 이를 구비한 웨이퍼 검사 시스템 |
KR101297209B1 (ko) | 2011-11-04 | 2013-08-16 | (주)오로스 테크놀로지 | 반도체용 웨이퍼 결함 검사방법 |
US9645097B2 (en) * | 2014-06-20 | 2017-05-09 | Kla-Tencor Corporation | In-line wafer edge inspection, wafer pre-alignment, and wafer cleaning |
KR20160050112A (ko) * | 2014-10-28 | 2016-05-11 | 주식회사 트라이비스 | 라인 스캔 카메라를 이용한 솔라셀 웨이퍼 측면 검사 시스템 |
KR102350549B1 (ko) | 2014-12-05 | 2022-01-14 | 세메스 주식회사 | 웨이퍼 결함 검사 장치 |
KR102062120B1 (ko) * | 2018-02-09 | 2020-01-06 | 코리아테크노주식회사 | 웨이퍼 치핑 검사시스템과 웨이퍼 치핑 검사방법 |
-
2020
- 2020-01-15 KR KR1020200005414A patent/KR102453258B1/ko active IP Right Grant
- 2020-06-11 WO PCT/KR2020/007577 patent/WO2021145516A1/ko active Application Filing
- 2020-06-11 JP JP2022543093A patent/JP7453494B2/ja active Active
- 2020-06-11 CN CN202080096090.2A patent/CN115088060A/zh active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2013527925A (ja) * | 2010-05-06 | 2013-07-04 | アルタテック・セミコンダクター | 移動中半導体ウエハの検査装置およびその方法 |
JP2012216754A (ja) * | 2011-03-30 | 2012-11-08 | Dainippon Screen Mfg Co Ltd | 基板検査装置および基板検査方法 |
Also Published As
Publication number | Publication date |
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CN115088060A (zh) | 2022-09-20 |
KR102453258B1 (ko) | 2022-10-11 |
JP7453494B2 (ja) | 2024-03-21 |
WO2021145516A1 (ko) | 2021-07-22 |
KR20210092001A (ko) | 2021-07-23 |
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