KR20210092001A - 웨이퍼 모서리 결함 검사장치 및 검사방법 - Google Patents
웨이퍼 모서리 결함 검사장치 및 검사방법 Download PDFInfo
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- KR20210092001A KR20210092001A KR1020200005414A KR20200005414A KR20210092001A KR 20210092001 A KR20210092001 A KR 20210092001A KR 1020200005414 A KR1020200005414 A KR 1020200005414A KR 20200005414 A KR20200005414 A KR 20200005414A KR 20210092001 A KR20210092001 A KR 20210092001A
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 230000007547 defect Effects 0.000 claims abstract description 112
- 238000007689 inspection Methods 0.000 claims abstract description 78
- 238000003708 edge detection Methods 0.000 claims abstract description 33
- 235000012431 wafers Nutrition 0.000 claims description 320
- 238000012546 transfer Methods 0.000 claims description 25
- 230000002950 deficient Effects 0.000 claims description 5
- 238000001514 detection method Methods 0.000 description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 238000005286 illumination Methods 0.000 description 11
- YJLUBHOZZTYQIP-UHFFFAOYSA-N 2-[5-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-1,3,4-oxadiazol-2-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1=NN=C(O1)CC(=O)N1CC2=C(CC1)NN=N2 YJLUBHOZZTYQIP-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- CONKBQPVFMXDOV-QHCPKHFHSA-N 6-[(5S)-5-[[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]methyl]-2-oxo-1,3-oxazolidin-3-yl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C[C@H]1CN(C(O1)=O)C1=CC2=C(NC(O2)=O)C=C1 CONKBQPVFMXDOV-QHCPKHFHSA-N 0.000 description 3
- 238000013016 damping Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
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- 230000003287 optical effect Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- KZEVSDGEBAJOTK-UHFFFAOYSA-N 1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-2-[5-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]-1,3,4-oxadiazol-2-yl]ethanone Chemical compound N1N=NC=2CN(CCC=21)C(CC=1OC(=NN=1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)=O KZEVSDGEBAJOTK-UHFFFAOYSA-N 0.000 description 1
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 1
- WZFUQSJFWNHZHM-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 WZFUQSJFWNHZHM-UHFFFAOYSA-N 0.000 description 1
- JQMFQLVAJGZSQS-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-N-(2-oxo-3H-1,3-benzoxazol-6-yl)acetamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)NC1=CC2=C(NC(O2)=O)C=C1 JQMFQLVAJGZSQS-UHFFFAOYSA-N 0.000 description 1
- APLNAFMUEHKRLM-UHFFFAOYSA-N 2-[5-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-1,3,4-oxadiazol-2-yl]-1-(3,4,6,7-tetrahydroimidazo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1=NN=C(O1)CC(=O)N1CC2=C(CC1)N=CN2 APLNAFMUEHKRLM-UHFFFAOYSA-N 0.000 description 1
- WTFUTSCZYYCBAY-SXBRIOAWSA-N 6-[(E)-C-[[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]methyl]-N-hydroxycarbonimidoyl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C/C(=N/O)/C1=CC2=C(NC(O2)=O)C=C1 WTFUTSCZYYCBAY-SXBRIOAWSA-N 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9503—Wafer edge inspection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
도 2는 도 1에 도시된 웨이퍼 모서리 결함 검사장치의 측면도.
도 3 내지 도 4는 본 발명의 웨이퍼 파지부의 사시도
도 5는 도 4에 도시된 웨이퍼 파지부의 평면도.
도 6은 본 발명의 웨이퍼 파지부에 웨이퍼를 파지하는 모습을 나타낸 측면도.
도 7 내지 도 8은 본 발명의 에지검측부를 나타낸 측면도.
도 9는 본 발명의 웨이퍼 모서리 결함 감시방법을 나타낸 순서도.
111: 평면 112: 이면
113: 수직면 114: 제 1경계면
115: 제 2경계면 200: 웨이퍼 파지부
210: 접촉체 220: 홀더체결체
230: 홀더엑츄에이터 240: 구동모터
250: 홀더작동캠 300: 에지검측부
310: 라이트 320: 카메라
321: 제 1카메라 322: 제 2카메라
330: 검측하우징 331: 반사부
332: 확산판 341: 제 1이송장치
342: 제 1이동제어기 351: 조도기
352: 조도제어기 361: 제 2이송장치
362: 위치측정센서 363: 이송제어기
410: 제어부 420: 초점제어기
430: 렌즈구동장치 510: 케이스
S100: 이송단계 S200: 파지단계
S300: 검지단계 S310: 부분이탈단계
S320: 조명단계 S330: 촬영단계
S340: 초점조절단계 S350: 조도조절단계
S500: 결함판단단계 S410: 웨이퍼 회전단계
S420: 웨이퍼 이동단계?
Claims (6)
- 판재형상의 웨이퍼(100);,
상기 웨이퍼(100)를 고정하는 웨이퍼 파지부(200);,
상기 웨이퍼 모서리(110)의 결함을 검측하는 에지검측부(300);를 포함하는 웨이퍼 모서리 결함 검사장치.
- 청구항 1에 있어서,
상기 웨이퍼 파지부(200)는 복수로 형성되며 상기 웨이퍼(100)의 면 및/또는 모서리와 접촉되는 접촉체(210);를 포함하는 웨이퍼 모서리 결함 검사장치.
- 청구항 2에 있어서,
상기 에지검측부(300)는 일정한 조도의 빛을 상기 모서리에 발광하는 라이트(310);,
상기 웨이퍼 모서리(110)를 촬영하는 카메라(320);를 포함하는 웨이퍼 모서리 결함 검사장치.
- 청구항 3에 있어서,
상기 카메라(320)의 화상 정보를 입력 받으며, 웨이퍼 모서리(110)의 결함여부를 판별하는 제어부(410);를 포함하는 웨이퍼 모서리 결함 검사장치.
- 청구항 1에 있어서,
내부공간을 형성하며, 상기 웨이퍼 파지부(200) 및 상기 에지검측부(300)를 수용하는 케이스(510);
상기 케이스(510) 외부와 결합되며, 복수의 웨이퍼(100)를 수용하는 웨이퍼(100)카트리지(520);
상기 웨이퍼(100)카트리지 및 상기 웨이퍼 파지부(200)로 웨이퍼(100)를 이송하는 이송로봇(530);을 포함하는 웨이퍼 모서리 결함 검사장치.
- 웨이퍼 모서리 결함 검사방법에 있어서, 웨이퍼(100)를 웨이퍼 파지부(200)로 이송하는 이송단계(S100);,
상기 이송단계(S100) 후, 웨이퍼(100)의 모서리를 파지하는 파지단계(S200);
상기 파지단계(S200) 후, 웨이퍼 모서리(110)를 검지하는 검지단계(S300);를 포함하는 웨이퍼 모서리 결함 검사방법.
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KR1020200005414A KR102453258B1 (ko) | 2020-01-15 | 2020-01-15 | 웨이퍼 모서리 결함 검사장치 및 검사방법 |
PCT/KR2020/007577 WO2021145516A1 (ko) | 2020-01-15 | 2020-06-11 | 웨이퍼 모서리 결함 검사장치 및 검사방법 |
JP2022543093A JP7453494B2 (ja) | 2020-01-15 | 2020-06-11 | ウエハー縁欠陥検査装置及び検査方法 |
CN202080096090.2A CN115088060A (zh) | 2020-01-15 | 2020-06-11 | 晶片棱角缺陷检查装置和检查方法 |
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CN118777311A (zh) * | 2024-07-19 | 2024-10-15 | 深圳市盛麦客精密模切有限公司 | 基于视觉检测的破膜刀质量检测方法、设备及介质 |
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CN114088724B (zh) * | 2021-11-20 | 2023-08-18 | 深圳市北科检测科技有限公司 | 一种显示屏边缘缺陷检测装置 |
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KR20100023861A (ko) | 2008-06-27 | 2010-03-04 | 니뽄 엘렉트로-센서리 디바이스 가부시끼가이샤 | 실리콘 웨이퍼의 결함 검사 장치 및 그 결함 검사 방법 |
KR20100053038A (ko) | 2008-11-12 | 2010-05-20 | 주식회사 투아이스펙트라 | 웨이퍼 결함의 검사장치 및 검사방법 |
KR20120052502A (ko) * | 2010-11-16 | 2012-05-24 | 한미반도체 주식회사 | 웨이퍼 검사장치 및 이를 구비한 웨이퍼 검사 시스템 |
KR20130049359A (ko) | 2011-11-04 | 2013-05-14 | (주)오로스 테크놀로지 | 반도체용 웨이퍼 결함 검사방법 |
KR20160068228A (ko) | 2014-12-05 | 2016-06-15 | 세메스 주식회사 | 웨이퍼 결함 검사 장치 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN118777311A (zh) * | 2024-07-19 | 2024-10-15 | 深圳市盛麦客精密模切有限公司 | 基于视觉检测的破膜刀质量检测方法、设备及介质 |
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JP7453494B2 (ja) | 2024-03-21 |
WO2021145516A1 (ko) | 2021-07-22 |
JP2023517166A (ja) | 2023-04-24 |
CN115088060A (zh) | 2022-09-20 |
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