JP2023505992A5 - - Google Patents

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Publication number
JP2023505992A5
JP2023505992A5 JP2022535046A JP2022535046A JP2023505992A5 JP 2023505992 A5 JP2023505992 A5 JP 2023505992A5 JP 2022535046 A JP2022535046 A JP 2022535046A JP 2022535046 A JP2022535046 A JP 2022535046A JP 2023505992 A5 JP2023505992 A5 JP 2023505992A5
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JP
Japan
Prior art keywords
substrate
metal surface
capping layer
sacrificial capping
group
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JP2022535046A
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English (en)
Japanese (ja)
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JP2023505992A (ja
JP7627432B2 (ja
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Priority claimed from PCT/US2020/063770 external-priority patent/WO2021118993A1/en
Publication of JP2023505992A publication Critical patent/JP2023505992A/ja
Publication of JP2023505992A5 publication Critical patent/JP2023505992A5/ja
Application granted granted Critical
Publication of JP7627432B2 publication Critical patent/JP7627432B2/ja
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JP2022535046A 2019-12-10 2020-12-08 犠牲キャッピング層としての自己組織化単分子層 Active JP7627432B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962946243P 2019-12-10 2019-12-10
US62/946,243 2019-12-10
PCT/US2020/063770 WO2021118993A1 (en) 2019-12-10 2020-12-08 Self-assembled monolayers as sacrificial capping layers

Publications (3)

Publication Number Publication Date
JP2023505992A JP2023505992A (ja) 2023-02-14
JP2023505992A5 true JP2023505992A5 (enExample) 2023-12-14
JP7627432B2 JP7627432B2 (ja) 2025-02-06

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JP2022535046A Active JP7627432B2 (ja) 2019-12-10 2020-12-08 犠牲キャッピング層としての自己組織化単分子層

Country Status (6)

Country Link
US (1) US11915973B2 (enExample)
JP (1) JP7627432B2 (enExample)
KR (1) KR102889307B1 (enExample)
CN (1) CN114830323B (enExample)
TW (1) TWI865682B (enExample)
WO (1) WO2021118993A1 (enExample)

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KR102953225B1 (ko) 2021-07-06 2026-04-16 도쿄엘렉트론가부시키가이샤 자기조립 단분자층을 사용하는 선택적 막 형성
US11990369B2 (en) 2021-08-20 2024-05-21 Applied Materials, Inc. Selective patterning with molecular layer deposition
JP2023182324A (ja) * 2022-06-14 2023-12-26 東京エレクトロン株式会社 成膜方法及び成膜装置
JP2024049188A (ja) * 2022-09-28 2024-04-09 東京エレクトロン株式会社 膜形成方法及び基板処理装置
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US12604685B2 (en) * 2023-07-19 2026-04-14 Tokyo Electron Limited Methods for controlling spin-on self-assembled monolayer (SAM) selectivity
JP2025087989A (ja) * 2023-11-30 2025-06-11 東京エレクトロン株式会社 成膜方法及び成膜装置
US20260053045A1 (en) * 2024-08-16 2026-02-19 Applied Materials, Inc. Integrated encapsulation deposition with metal recovery and passivation

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US7387362B2 (en) * 2005-03-18 2008-06-17 Hewlett-Packard Development Company, L.P. Methods and architecture for applying self-assembled monolayer(s)
CN101903990B (zh) * 2007-12-18 2013-11-06 杨秉春 嵌入式互连系统的形成方法、双重嵌入式互连系统的形成方法及集成电路装置的形成方法
US7875519B2 (en) * 2008-05-21 2011-01-25 Intel Corporation Metal gate structure and method of manufacturing same
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CN102270607B (zh) * 2010-06-03 2014-01-29 中国科学院微电子研究所 栅极堆叠的制造方法和半导体器件
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