JP7627432B2 - 犠牲キャッピング層としての自己組織化単分子層 - Google Patents

犠牲キャッピング層としての自己組織化単分子層 Download PDF

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JP7627432B2
JP7627432B2 JP2022535046A JP2022535046A JP7627432B2 JP 7627432 B2 JP7627432 B2 JP 7627432B2 JP 2022535046 A JP2022535046 A JP 2022535046A JP 2022535046 A JP2022535046 A JP 2022535046A JP 7627432 B2 JP7627432 B2 JP 7627432B2
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substrate
metal surface
capping layer
sacrificial capping
dielectric material
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JP2023505992A5 (enExample
JP2023505992A (ja
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ネグレイラ，アイノア ロモ
有美子 河野
トリヨソ，ディーナ
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/077—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers on sidewalls or on top surfaces of conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6504—In-situ cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2022535046A 2019-12-10 2020-12-08 犠牲キャッピング層としての自己組織化単分子層 Active JP7627432B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962946243P 2019-12-10 2019-12-10
US62/946,243 2019-12-10
PCT/US2020/063770 WO2021118993A1 (en) 2019-12-10 2020-12-08 Self-assembled monolayers as sacrificial capping layers

Publications (3)

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JP2023505992A JP2023505992A (ja) 2023-02-14
JP2023505992A5 JP2023505992A5 (enExample) 2023-12-14
JP7627432B2 true JP7627432B2 (ja) 2025-02-06

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US (1) US11915973B2 (enExample)
JP (1) JP7627432B2 (enExample)
KR (1) KR102889307B1 (enExample)
CN (1) CN114830323B (enExample)
TW (1) TWI865682B (enExample)
WO (1) WO2021118993A1 (enExample)

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US11990369B2 (en) 2021-08-20 2024-05-21 Applied Materials, Inc. Selective patterning with molecular layer deposition
JP2023182324A (ja) * 2022-06-14 2023-12-26 東京エレクトロン株式会社 成膜方法及び成膜装置
JP2024049188A (ja) * 2022-09-28 2024-04-09 東京エレクトロン株式会社 膜形成方法及び基板処理装置
JP2024081396A (ja) * 2022-12-06 2024-06-18 東京エレクトロン株式会社 成膜方法及び成膜装置
US12604685B2 (en) * 2023-07-19 2026-04-14 Tokyo Electron Limited Methods for controlling spin-on self-assembled monolayer (SAM) selectivity
JP2025087989A (ja) * 2023-11-30 2025-06-11 東京エレクトロン株式会社 成膜方法及び成膜装置
US20260053045A1 (en) * 2024-08-16 2026-02-19 Applied Materials, Inc. Integrated encapsulation deposition with metal recovery and passivation

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JP2018046279A (ja) 2016-09-13 2018-03-22 東京エレクトロン株式会社 セルフアセンブル単層表面前処理を用いた選択的金属酸化物堆積
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JP2018512504A (ja) 2015-02-26 2018-05-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 自己組織化単分子膜を用いた選択的誘電体堆積のための方法
JP2017098539A (ja) 2015-10-21 2017-06-01 ウルトラテック インク 自己組織化単分子層を用いたａｌｄ抑制層の形成方法
JP2019515493A (ja) 2016-04-25 2019-06-06 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 自己組織化単分子層処理のための化学物質供給チャンバ
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JP2019096877A (ja) 2017-11-20 2019-06-20 東京エレクトロン株式会社 完全自己整合性ビアを形成するための選択的付着の方法
WO2019202418A1 (en) 2018-04-19 2019-10-24 International Business Machines Corporation Polymerizable self-assembled monolayers for use in atomic layer deposition

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JP2023505992A (ja) 2023-02-14
TW202135135A (zh) 2021-09-16
TWI865682B (zh) 2024-12-11
KR20220113444A (ko) 2022-08-12
CN114830323B (zh) 2026-03-20
CN114830323A (zh) 2022-07-29
KR102889307B1 (ko) 2025-11-20
WO2021118993A1 (en) 2021-06-17
US20210175118A1 (en) 2021-06-10
US11915973B2 (en) 2024-02-27

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