JP2023184577A5 - - Google Patents
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- Publication number
- JP2023184577A5 JP2023184577A5 JP2023179430A JP2023179430A JP2023184577A5 JP 2023184577 A5 JP2023184577 A5 JP 2023184577A5 JP 2023179430 A JP2023179430 A JP 2023179430A JP 2023179430 A JP2023179430 A JP 2023179430A JP 2023184577 A5 JP2023184577 A5 JP 2023184577A5
- Authority
- JP
- Japan
- Prior art keywords
- plane
- less
- single crystal
- crystal substrate
- main surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023179430A JP2023184577A (ja) | 2021-03-24 | 2023-10-18 | Ｇａ２Ｏ３系単結晶基板並びにＧａ２Ｏ３系単結晶基板の製造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021049332A JP7704399B2 (ja) | 2021-03-24 | 2021-03-24 | Ｇａ２Ｏ３系単結晶基板並びにＡｌｘＧａ（１－ｘ）Ｎ系半導体積層体の製造方法 |
| JP2023179430A JP2023184577A (ja) | 2021-03-24 | 2023-10-18 | Ｇａ２Ｏ３系単結晶基板並びにＧａ２Ｏ３系単結晶基板の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021049332A Division JP7704399B2 (ja) | 2021-03-24 | 2021-03-24 | Ｇａ２Ｏ３系単結晶基板並びにＡｌｘＧａ（１－ｘ）Ｎ系半導体積層体の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2023184577A JP2023184577A (ja) | 2023-12-28 |
| JP2023184577A5 true JP2023184577A5 (https=) | 2024-03-27 |
Family
ID=83397419
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021049332A Active JP7704399B2 (ja) | 2021-03-24 | 2021-03-24 | Ｇａ２Ｏ３系単結晶基板並びにＡｌｘＧａ（１－ｘ）Ｎ系半導体積層体の製造方法 |
| JP2023179430A Pending JP2023184577A (ja) | 2021-03-24 | 2023-10-18 | Ｇａ２Ｏ３系単結晶基板並びにＧａ２Ｏ３系単結晶基板の製造方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021049332A Active JP7704399B2 (ja) | 2021-03-24 | 2021-03-24 | Ｇａ２Ｏ３系単結晶基板並びにＡｌｘＧａ（１－ｘ）Ｎ系半導体積層体の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240011192A1 (https=) |
| EP (1) | EP4317547A4 (https=) |
| JP (2) | JP7704399B2 (https=) |
| TW (1) | TW202302934A (https=) |
| WO (1) | WO2022202747A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025250905A1 (en) * | 2024-05-31 | 2025-12-04 | Luxium Solutions, Llc | Apparatus and method for growth of gallium oxide crystal with an offcut |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000211993A (ja) | 1999-01-22 | 2000-08-02 | Mitsubishi Electric Corp | 半導体ウェハの製造方法、半導体製造装置、および、半導体装置 |
| WO2004074556A2 (ja) * | 2003-02-24 | 2004-09-02 | Waseda University | β‐Ｇａ2Ｏ3系単結晶成長方法、薄膜単結晶の成長方法、Ｇａ2Ｏ3系発光素子およびその製造方法 |
| TWI431669B (zh) * | 2007-11-21 | 2014-03-21 | 三菱化學股份有限公司 | Crystallization Growth of Nitride Semiconductor and Nitride Semiconductor |
| JP5051455B2 (ja) | 2008-01-16 | 2012-10-17 | 日立電線株式会社 | エピタキシャル成長用窒化物半導体基板の製造方法 |
| JP5104830B2 (ja) * | 2008-09-08 | 2012-12-19 | 住友電気工業株式会社 | 基板 |
| JP5786179B2 (ja) | 2010-03-12 | 2015-09-30 | 並木精密宝石株式会社 | 酸化ガリウム単結晶及びその製造方法 |
| US9153648B2 (en) | 2011-04-08 | 2015-10-06 | Tamura Corporation | Semiconductor stacked body, method for manufacturing same, and semiconductor element |
| US9461124B2 (en) * | 2011-09-08 | 2016-10-04 | Tamura Corporation | Ga2O3 semiconductor element |
| JP5865440B2 (ja) * | 2014-06-30 | 2016-02-17 | 株式会社タムラ製作所 | β−Ｇａ２Ｏ３系単結晶基板の製造方法 |
| JP5749839B1 (ja) * | 2014-06-30 | 2015-07-15 | 株式会社タムラ製作所 | β−Ｇａ２Ｏ３系単結晶基板 |
| JP5747110B1 (ja) | 2014-06-30 | 2015-07-08 | 株式会社タムラ製作所 | Ｇａ２Ｏ３系単結晶基板 |
| JP2017157725A (ja) | 2016-03-02 | 2017-09-07 | 株式会社タムラ製作所 | 窒化物半導体テンプレート及びその製造方法、並びに紫外線ｌｅｄ |
-
2021
- 2021-03-24 JP JP2021049332A patent/JP7704399B2/ja active Active
-
2022
- 2022-03-07 TW TW111108149A patent/TW202302934A/zh unknown
- 2022-03-22 WO PCT/JP2022/012972 patent/WO2022202747A1/ja not_active Ceased
- 2022-03-22 EP EP22775531.1A patent/EP4317547A4/en active Pending
-
2023
- 2023-09-22 US US18/472,375 patent/US20240011192A1/en active Pending
- 2023-10-18 JP JP2023179430A patent/JP2023184577A/ja active Pending
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