JP7704399B2 - Ｇａ２Ｏ３系単結晶基板並びにＡｌｘＧａ（１－ｘ）Ｎ系半導体積層体の製造方法 - Google Patents

Ｇａ２Ｏ３系単結晶基板並びにＡｌｘＧａ（１－ｘ）Ｎ系半導体積層体の製造方法 Download PDF

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JP7704399B2
JP7704399B2 JP2021049332A JP2021049332A JP7704399B2 JP 7704399 B2 JP7704399 B2 JP 7704399B2 JP 2021049332 A JP2021049332 A JP 2021049332A JP 2021049332 A JP2021049332 A JP 2021049332A JP 7704399 B2 JP7704399 B2 JP 7704399B2
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ga2o3
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JP2022147881A (ja
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健吾 西口
敏郎 古滝
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Priority to PCT/JP2022/012972 priority patent/WO2022202747A1/ja
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Priority to JP2023179430A priority patent/JP2023184577A/ja
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
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    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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    • C30B25/18—Epitaxial-layer growth characterised by the substrate
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    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
JP2021049332A 2021-03-24 2021-03-24 Ｇａ２Ｏ３系単結晶基板並びにＡｌｘＧａ（１－ｘ）Ｎ系半導体積層体の製造方法 Active JP7704399B2 (ja)

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JP2021049332A JP7704399B2 (ja) 2021-03-24 2021-03-24 Ｇａ２Ｏ３系単結晶基板並びにＡｌｘＧａ（１－ｘ）Ｎ系半導体積層体の製造方法
TW111108149A TW202302934A (zh) 2021-03-24 2022-03-07 Ga2O3系單晶基板及Ga2O3系單晶基板的製造方法
EP22775531.1A EP4317547A4 (en) 2021-03-24 2022-03-22 GA2O3-BASED MONOCRYSTALLINE SUBSTRATE AND METHOD FOR MANUFACTURING GA2O3-BASED MONOCRYSTALLINE SUBSTRATE
PCT/JP2022/012972 WO2022202747A1 (ja) 2021-03-24 2022-03-22 Ｇａ２Ｏ３系単結晶基板並びにＧａ２Ｏ３系単結晶基板の製造方法
US18/472,375 US20240011192A1 (en) 2021-03-24 2023-09-22 Ga2o3-based single crystal substrate and method of manufacturing ga2o3-based single crystal substrate
JP2023179430A JP2023184577A (ja) 2021-03-24 2023-10-18 Ｇａ２Ｏ３系単結晶基板並びにＧａ２Ｏ３系単結晶基板の製造方法

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JP2021049332A JP7704399B2 (ja) 2021-03-24 2021-03-24 Ｇａ２Ｏ３系単結晶基板並びにＡｌｘＧａ（１－ｘ）Ｎ系半導体積層体の製造方法

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JP7704399B2 true JP7704399B2 (ja) 2025-07-08

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JP2023179430A Pending JP2023184577A (ja) 2021-03-24 2023-10-18 Ｇａ２Ｏ３系単結晶基板並びにＧａ２Ｏ３系単結晶基板の製造方法

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WO2025250905A1 (en) * 2024-05-31 2025-12-04 Luxium Solutions, Llc Apparatus and method for growth of gallium oxide crystal with an offcut

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000211993A (ja) 1999-01-22 2000-08-02 Mitsubishi Electric Corp 半導体ウェハの製造方法、半導体製造装置、および、半導体装置
JP2009167057A (ja) 2008-01-16 2009-07-30 Hitachi Cable Ltd 窒化物半導体基板の製造方法
JP2011190127A (ja) 2010-03-12 2011-09-29 Namiki Precision Jewel Co Ltd 酸化ガリウム単結晶及びその製造方法
JP5747110B1 (ja) 2014-06-30 2015-07-08 株式会社タムラ製作所 Ｇａ２Ｏ３系単結晶基板

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004074556A2 (ja) * 2003-02-24 2004-09-02 Waseda University β‐Ｇａ2Ｏ3系単結晶成長方法、薄膜単結晶の成長方法、Ｇａ2Ｏ3系発光素子およびその製造方法
TWI431669B (zh) * 2007-11-21 2014-03-21 三菱化學股份有限公司 Crystallization Growth of Nitride Semiconductor and Nitride Semiconductor
JP5104830B2 (ja) * 2008-09-08 2012-12-19 住友電気工業株式会社 基板
US9153648B2 (en) 2011-04-08 2015-10-06 Tamura Corporation Semiconductor stacked body, method for manufacturing same, and semiconductor element
US9461124B2 (en) * 2011-09-08 2016-10-04 Tamura Corporation Ga2O3 semiconductor element
JP5865440B2 (ja) * 2014-06-30 2016-02-17 株式会社タムラ製作所 β−Ｇａ２Ｏ３系単結晶基板の製造方法
JP5749839B1 (ja) * 2014-06-30 2015-07-15 株式会社タムラ製作所 β−Ｇａ２Ｏ３系単結晶基板
JP2017157725A (ja) 2016-03-02 2017-09-07 株式会社タムラ製作所 窒化物半導体テンプレート及びその製造方法、並びに紫外線ｌｅｄ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000211993A (ja) 1999-01-22 2000-08-02 Mitsubishi Electric Corp 半導体ウェハの製造方法、半導体製造装置、および、半導体装置
JP2009167057A (ja) 2008-01-16 2009-07-30 Hitachi Cable Ltd 窒化物半導体基板の製造方法
JP2011190127A (ja) 2010-03-12 2011-09-29 Namiki Precision Jewel Co Ltd 酸化ガリウム単結晶及びその製造方法
JP5747110B1 (ja) 2014-06-30 2015-07-08 株式会社タムラ製作所 Ｇａ２Ｏ３系単結晶基板

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US20240011192A1 (en) 2024-01-11
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WO2022202747A1 (ja) 2022-09-29
EP4317547A4 (en) 2024-08-21
TW202302934A (zh) 2023-01-16
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