JP2023129405A5 - - Google Patents

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Publication number
JP2023129405A5
JP2023129405A5 JP2023097154A JP2023097154A JP2023129405A5 JP 2023129405 A5 JP2023129405 A5 JP 2023129405A5 JP 2023097154 A JP2023097154 A JP 2023097154A JP 2023097154 A JP2023097154 A JP 2023097154A JP 2023129405 A5 JP2023129405 A5 JP 2023129405A5
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JP
Japan
Prior art keywords
aerial image
mask
photomask
alignment
correction
Prior art date
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Pending
Application number
JP2023097154A
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English (en)
Japanese (ja)
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JP2023129405A (ja
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Priority claimed from DE102020104167.5A external-priority patent/DE102020104167B4/de
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Publication of JP2023129405A publication Critical patent/JP2023129405A/ja
Publication of JP2023129405A5 publication Critical patent/JP2023129405A5/ja
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JP2023097154A 2020-02-18 2023-06-13 フォトマスクを測定するための方法 Pending JP2023129405A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102020104167.5 2020-02-18
DE102020104167.5A DE102020104167B4 (de) 2020-02-18 2020-02-18 Verfahren zur Vermessung von Photomasken
JP2021024113A JP2021144211A (ja) 2020-02-18 2021-02-18 フォトマスクを測定するための方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2021024113A Division JP2021144211A (ja) 2020-02-18 2021-02-18 フォトマスクを測定するための方法

Publications (2)

Publication Number Publication Date
JP2023129405A JP2023129405A (ja) 2023-09-14
JP2023129405A5 true JP2023129405A5 (https=) 2024-02-28

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ID=77060607

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021024113A Pending JP2021144211A (ja) 2020-02-18 2021-02-18 フォトマスクを測定するための方法
JP2023097154A Pending JP2023129405A (ja) 2020-02-18 2023-06-13 フォトマスクを測定するための方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2021024113A Pending JP2021144211A (ja) 2020-02-18 2021-02-18 フォトマスクを測定するための方法

Country Status (6)

Country Link
US (1) US11899358B2 (https=)
JP (2) JP2021144211A (https=)
KR (1) KR102638175B1 (https=)
CN (1) CN113340564B (https=)
DE (1) DE102020104167B4 (https=)
TW (1) TWI788783B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021112547A1 (de) * 2021-05-14 2022-11-17 Carl Zeiss Smt Gmbh Verfahren zur Ermittlung eines Registrierungsfehlers

Family Cites Families (28)

* Cited by examiner, † Cited by third party
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WO2000025181A1 (en) * 1998-10-23 2000-05-04 Hitachi, Ltd. Method for fabricating semiconductor device and method for forming mask suitable therefor
JP2005251983A (ja) * 2004-03-04 2005-09-15 Renesas Technology Corp 荷電粒子線マスク検査方法及び荷電粒子線マスク検査装置
US7617477B2 (en) * 2005-09-09 2009-11-10 Brion Technologies, Inc. Method for selecting and optimizing exposure tool using an individual mask error model
KR100924335B1 (ko) * 2007-03-27 2009-11-02 주식회사 하이닉스반도체 멀티 도즈 시뮬레이션을 이용한 광근접보정 방법
KR100881194B1 (ko) * 2007-05-16 2009-02-05 삼성전자주식회사 공간 영상 검사 장비를 이용한 마스크 측정 방법
KR100914297B1 (ko) * 2007-12-28 2009-08-27 주식회사 하이닉스반도체 웨이퍼 패턴 계측 데이터를 이용한 광근접효과보정 방법
EP2093614A1 (en) 2008-02-22 2009-08-26 Imec Split and design guidelines for double patterning
DE102008015631A1 (de) 2008-03-20 2009-09-24 Carl Zeiss Sms Gmbh Verfahren und Vorrichtung zur Vermessung von Masken für die Photolithographie
JP5341399B2 (ja) 2008-06-03 2013-11-13 ルネサスエレクトロニクス株式会社 パターン検証方法、パターン検証装置、プログラム、及び半導体装置の製造方法
JP2010038944A (ja) 2008-07-31 2010-02-18 Toshiba Corp フォトマスクの製造方法及びこのフォトマスクを用いた半導体デバイスの製造方法
JP5235719B2 (ja) 2009-02-27 2013-07-10 株式会社日立ハイテクノロジーズ パターン測定装置
DE102009038558A1 (de) * 2009-08-24 2011-03-10 Carl Zeiss Sms Gmbh Verfahren zur Emulation eines fotolithographischen Prozesses und Maskeninspektionsmikroskop zur Durchführung des Verfahrens
US8148682B2 (en) 2009-12-29 2012-04-03 Hitachi, Ltd. Method and apparatus for pattern position and overlay measurement
JP5254270B2 (ja) * 2010-04-09 2013-08-07 株式会社ニューフレアテクノロジー 検査方法および検査装置
WO2012013638A1 (en) 2010-07-26 2012-02-02 Carl Zeiss Sms Ltd. Lithographic targets for uniformity control
TWI518446B (zh) 2011-12-19 2016-01-21 聯華電子股份有限公司 修正佈局圖案的方法以及製作光罩的方法
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JP2016021008A (ja) * 2014-07-15 2016-02-04 凸版印刷株式会社 マルチパターニング用マスクのパターン評価方法およびパターン評価装置
EP3037878B1 (en) 2014-12-23 2020-09-09 Aselta Nanographics Method of applying vertex based corrections to a semiconductor design
JP6547535B2 (ja) * 2015-09-14 2019-07-24 大日本印刷株式会社 フォトマスクの転写特性評価方法と転写特性評価システムおよびフォトマスクの製造方法
US10572990B2 (en) * 2017-04-07 2020-02-25 Nuflare Technology, Inc. Pattern inspection apparatus, pattern position measurement apparatus, aerial image measurement system, method for measuring aerial image, pattern position repairing apparatus, method for repairing pattern position, aerial image data processing apparatus, method for processing aerial image data, pattern exposure apparatus, method for exposing pattern, method for manufacturing mask, and mask manufacturing system
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DE102017219217B4 (de) * 2017-10-26 2021-03-25 Carl Zeiss Smt Gmbh Masken für die Mikrolithographie, Verfahren zur Bestimmung von Kantenpositionen der Bilder der Strukturen einer derartigen Maske und System zur Durchführung eines derartigen Verfahrens
DE102018111972A1 (de) 2018-05-18 2019-05-29 Carl Zeiss Smt Gmbh Verfahren zur Bestimmung von Registrationsfehlern auf einer Photomaske für die Halbleiterlithographie
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