KR102638175B1 - 포토마스크를 측정하는 방법 - Google Patents

포토마스크를 측정하는 방법 Download PDF

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Publication number
KR102638175B1
KR102638175B1 KR1020210021797A KR20210021797A KR102638175B1 KR 102638175 B1 KR102638175 B1 KR 102638175B1 KR 1020210021797 A KR1020210021797 A KR 1020210021797A KR 20210021797 A KR20210021797 A KR 20210021797A KR 102638175 B1 KR102638175 B1 KR 102638175B1
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South Korea
Prior art keywords
mask
aerial image
registration
photomask
identified
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Korean (ko)
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KR20210105838A (ko
Inventor
드미트리 시마코프
토마스 탈러
스테펜 슈타이너트
디르크 바이에르
우테 부트거라이트
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칼 짜이스 에스엠티 게엠베하
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020210021797A 2020-02-18 2021-02-18 포토마스크를 측정하는 방법 Active KR102638175B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102020104167.5 2020-02-18
DE102020104167.5A DE102020104167B4 (de) 2020-02-18 2020-02-18 Verfahren zur Vermessung von Photomasken

Publications (2)

Publication Number Publication Date
KR20210105838A KR20210105838A (ko) 2021-08-27
KR102638175B1 true KR102638175B1 (ko) 2024-02-19

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020210021797A Active KR102638175B1 (ko) 2020-02-18 2021-02-18 포토마스크를 측정하는 방법

Country Status (6)

Country Link
US (1) US11899358B2 (https=)
JP (2) JP2021144211A (https=)
KR (1) KR102638175B1 (https=)
CN (1) CN113340564B (https=)
DE (1) DE102020104167B4 (https=)
TW (1) TWI788783B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021112547A1 (de) * 2021-05-14 2022-11-17 Carl Zeiss Smt Gmbh Verfahren zur Ermittlung eines Registrierungsfehlers

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KR100914297B1 (ko) 2007-12-28 2009-08-27 주식회사 하이닉스반도체 웨이퍼 패턴 계측 데이터를 이용한 광근접효과보정 방법
KR100924335B1 (ko) 2007-03-27 2009-11-02 주식회사 하이닉스반도체 멀티 도즈 시뮬레이션을 이용한 광근접보정 방법
JP2010038944A (ja) 2008-07-31 2010-02-18 Toshiba Corp フォトマスクの製造方法及びこのフォトマスクを用いた半導体デバイスの製造方法
JP2017058397A (ja) * 2015-09-14 2017-03-23 大日本印刷株式会社 フォトマスクの転写特性評価方法と転写特性評価システムおよびフォトマスクの製造方法

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WO2000025181A1 (en) * 1998-10-23 2000-05-04 Hitachi, Ltd. Method for fabricating semiconductor device and method for forming mask suitable therefor
US7617477B2 (en) * 2005-09-09 2009-11-10 Brion Technologies, Inc. Method for selecting and optimizing exposure tool using an individual mask error model
KR100881194B1 (ko) * 2007-05-16 2009-02-05 삼성전자주식회사 공간 영상 검사 장비를 이용한 마스크 측정 방법
EP2093614A1 (en) 2008-02-22 2009-08-26 Imec Split and design guidelines for double patterning
DE102008015631A1 (de) 2008-03-20 2009-09-24 Carl Zeiss Sms Gmbh Verfahren und Vorrichtung zur Vermessung von Masken für die Photolithographie
JP5341399B2 (ja) 2008-06-03 2013-11-13 ルネサスエレクトロニクス株式会社 パターン検証方法、パターン検証装置、プログラム、及び半導体装置の製造方法
JP5235719B2 (ja) 2009-02-27 2013-07-10 株式会社日立ハイテクノロジーズ パターン測定装置
DE102009038558A1 (de) * 2009-08-24 2011-03-10 Carl Zeiss Sms Gmbh Verfahren zur Emulation eines fotolithographischen Prozesses und Maskeninspektionsmikroskop zur Durchführung des Verfahrens
US8148682B2 (en) 2009-12-29 2012-04-03 Hitachi, Ltd. Method and apparatus for pattern position and overlay measurement
JP5254270B2 (ja) * 2010-04-09 2013-08-07 株式会社ニューフレアテクノロジー 検査方法および検査装置
WO2012013638A1 (en) 2010-07-26 2012-02-02 Carl Zeiss Sms Ltd. Lithographic targets for uniformity control
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CN107121893B (zh) * 2017-06-12 2018-05-25 中国科学院上海光学精密机械研究所 光刻投影物镜热像差在线预测方法
DE102017115365B4 (de) * 2017-07-10 2020-10-15 Carl Zeiss Smt Gmbh Inspektionsvorrichtung für Masken für die Halbleiterlithographie und Verfahren
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DE102018111972A1 (de) 2018-05-18 2019-05-29 Carl Zeiss Smt Gmbh Verfahren zur Bestimmung von Registrationsfehlern auf einer Photomaske für die Halbleiterlithographie
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Publication number Priority date Publication date Assignee Title
JP2005251983A (ja) 2004-03-04 2005-09-15 Renesas Technology Corp 荷電粒子線マスク検査方法及び荷電粒子線マスク検査装置
KR100924335B1 (ko) 2007-03-27 2009-11-02 주식회사 하이닉스반도체 멀티 도즈 시뮬레이션을 이용한 광근접보정 방법
KR100914297B1 (ko) 2007-12-28 2009-08-27 주식회사 하이닉스반도체 웨이퍼 패턴 계측 데이터를 이용한 광근접효과보정 방법
JP2010038944A (ja) 2008-07-31 2010-02-18 Toshiba Corp フォトマスクの製造方法及びこのフォトマスクを用いた半導体デバイスの製造方法
JP2017058397A (ja) * 2015-09-14 2017-03-23 大日本印刷株式会社 フォトマスクの転写特性評価方法と転写特性評価システムおよびフォトマスクの製造方法

Also Published As

Publication number Publication date
JP2023129405A (ja) 2023-09-14
US20210255541A1 (en) 2021-08-19
CN113340564B (zh) 2024-12-06
DE102020104167B4 (de) 2023-01-26
US11899358B2 (en) 2024-02-13
TW202136901A (zh) 2021-10-01
DE102020104167A1 (de) 2021-08-19
CN113340564A (zh) 2021-09-03
TWI788783B (zh) 2023-01-01
JP2021144211A (ja) 2021-09-24
KR20210105838A (ko) 2021-08-27

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