DE102020104167B4 - Verfahren zur Vermessung von Photomasken - Google Patents

Verfahren zur Vermessung von Photomasken Download PDF

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Publication number
DE102020104167B4
DE102020104167B4 DE102020104167.5A DE102020104167A DE102020104167B4 DE 102020104167 B4 DE102020104167 B4 DE 102020104167B4 DE 102020104167 A DE102020104167 A DE 102020104167A DE 102020104167 B4 DE102020104167 B4 DE 102020104167B4
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DE
Germany
Prior art keywords
mask
aerial
registration
image
photomask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102020104167.5A
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German (de)
English (en)
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DE102020104167A1 (de
Inventor
Dmitry Simakov
Thomas Thaler
Steffen Steinert
Dirk Beyer
Ute Buttgereit
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
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Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Priority to DE102020104167.5A priority Critical patent/DE102020104167B4/de
Priority to US17/177,411 priority patent/US11899358B2/en
Priority to JP2021024113A priority patent/JP2021144211A/ja
Priority to TW110105486A priority patent/TWI788783B/zh
Priority to KR1020210021797A priority patent/KR102638175B1/ko
Priority to CN202110190657.9A priority patent/CN113340564B/zh
Publication of DE102020104167A1 publication Critical patent/DE102020104167A1/de
Application granted granted Critical
Publication of DE102020104167B4 publication Critical patent/DE102020104167B4/de
Priority to JP2023097154A priority patent/JP2023129405A/ja
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Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE102020104167.5A 2020-02-18 2020-02-18 Verfahren zur Vermessung von Photomasken Active DE102020104167B4 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE102020104167.5A DE102020104167B4 (de) 2020-02-18 2020-02-18 Verfahren zur Vermessung von Photomasken
US17/177,411 US11899358B2 (en) 2020-02-18 2021-02-17 Method for measuring photomasks
TW110105486A TWI788783B (zh) 2020-02-18 2021-02-18 光罩測量方法
KR1020210021797A KR102638175B1 (ko) 2020-02-18 2021-02-18 포토마스크를 측정하는 방법
JP2021024113A JP2021144211A (ja) 2020-02-18 2021-02-18 フォトマスクを測定するための方法
CN202110190657.9A CN113340564B (zh) 2020-02-18 2021-02-18 用于测量光掩模的方法
JP2023097154A JP2023129405A (ja) 2020-02-18 2023-06-13 フォトマスクを測定するための方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102020104167.5A DE102020104167B4 (de) 2020-02-18 2020-02-18 Verfahren zur Vermessung von Photomasken

Publications (2)

Publication Number Publication Date
DE102020104167A1 DE102020104167A1 (de) 2021-08-19
DE102020104167B4 true DE102020104167B4 (de) 2023-01-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE102020104167.5A Active DE102020104167B4 (de) 2020-02-18 2020-02-18 Verfahren zur Vermessung von Photomasken

Country Status (6)

Country Link
US (1) US11899358B2 (https=)
JP (2) JP2021144211A (https=)
KR (1) KR102638175B1 (https=)
CN (1) CN113340564B (https=)
DE (1) DE102020104167B4 (https=)
TW (1) TWI788783B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021112547A1 (de) * 2021-05-14 2022-11-17 Carl Zeiss Smt Gmbh Verfahren zur Ermittlung eines Registrierungsfehlers

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110016437A1 (en) 2008-03-20 2011-01-20 Scheruebl Thomas Method and apparatus for measuring of masks for the photo-lithography
DE102018111972A1 (de) 2018-05-18 2019-05-29 Carl Zeiss Smt Gmbh Verfahren zur Bestimmung von Registrationsfehlern auf einer Photomaske für die Halbleiterlithographie

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5504793A (en) * 1995-02-17 1996-04-02 Loral Federal Systems Company Magnification correction for 1-X proximity X-Ray lithography
WO2000025181A1 (en) * 1998-10-23 2000-05-04 Hitachi, Ltd. Method for fabricating semiconductor device and method for forming mask suitable therefor
JP2005251983A (ja) * 2004-03-04 2005-09-15 Renesas Technology Corp 荷電粒子線マスク検査方法及び荷電粒子線マスク検査装置
US7617477B2 (en) * 2005-09-09 2009-11-10 Brion Technologies, Inc. Method for selecting and optimizing exposure tool using an individual mask error model
KR100924335B1 (ko) * 2007-03-27 2009-11-02 주식회사 하이닉스반도체 멀티 도즈 시뮬레이션을 이용한 광근접보정 방법
KR100881194B1 (ko) * 2007-05-16 2009-02-05 삼성전자주식회사 공간 영상 검사 장비를 이용한 마스크 측정 방법
KR100914297B1 (ko) * 2007-12-28 2009-08-27 주식회사 하이닉스반도체 웨이퍼 패턴 계측 데이터를 이용한 광근접효과보정 방법
EP2093614A1 (en) 2008-02-22 2009-08-26 Imec Split and design guidelines for double patterning
JP5341399B2 (ja) 2008-06-03 2013-11-13 ルネサスエレクトロニクス株式会社 パターン検証方法、パターン検証装置、プログラム、及び半導体装置の製造方法
JP2010038944A (ja) 2008-07-31 2010-02-18 Toshiba Corp フォトマスクの製造方法及びこのフォトマスクを用いた半導体デバイスの製造方法
JP5235719B2 (ja) 2009-02-27 2013-07-10 株式会社日立ハイテクノロジーズ パターン測定装置
DE102009038558A1 (de) * 2009-08-24 2011-03-10 Carl Zeiss Sms Gmbh Verfahren zur Emulation eines fotolithographischen Prozesses und Maskeninspektionsmikroskop zur Durchführung des Verfahrens
US8148682B2 (en) 2009-12-29 2012-04-03 Hitachi, Ltd. Method and apparatus for pattern position and overlay measurement
JP5254270B2 (ja) * 2010-04-09 2013-08-07 株式会社ニューフレアテクノロジー 検査方法および検査装置
WO2012013638A1 (en) 2010-07-26 2012-02-02 Carl Zeiss Sms Ltd. Lithographic targets for uniformity control
TWI518446B (zh) 2011-12-19 2016-01-21 聯華電子股份有限公司 修正佈局圖案的方法以及製作光罩的方法
US8948495B2 (en) 2012-08-01 2015-02-03 Kla-Tencor Corp. Inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer
JP2016021008A (ja) * 2014-07-15 2016-02-04 凸版印刷株式会社 マルチパターニング用マスクのパターン評価方法およびパターン評価装置
EP3037878B1 (en) 2014-12-23 2020-09-09 Aselta Nanographics Method of applying vertex based corrections to a semiconductor design
JP6547535B2 (ja) * 2015-09-14 2019-07-24 大日本印刷株式会社 フォトマスクの転写特性評価方法と転写特性評価システムおよびフォトマスクの製造方法
US10572990B2 (en) * 2017-04-07 2020-02-25 Nuflare Technology, Inc. Pattern inspection apparatus, pattern position measurement apparatus, aerial image measurement system, method for measuring aerial image, pattern position repairing apparatus, method for repairing pattern position, aerial image data processing apparatus, method for processing aerial image data, pattern exposure apparatus, method for exposing pattern, method for manufacturing mask, and mask manufacturing system
US10176966B1 (en) 2017-04-13 2019-01-08 Fractilia, Llc Edge detection system
CN107121893B (zh) * 2017-06-12 2018-05-25 中国科学院上海光学精密机械研究所 光刻投影物镜热像差在线预测方法
DE102017115365B4 (de) * 2017-07-10 2020-10-15 Carl Zeiss Smt Gmbh Inspektionsvorrichtung für Masken für die Halbleiterlithographie und Verfahren
DE102017219217B4 (de) * 2017-10-26 2021-03-25 Carl Zeiss Smt Gmbh Masken für die Mikrolithographie, Verfahren zur Bestimmung von Kantenpositionen der Bilder der Strukturen einer derartigen Maske und System zur Durchführung eines derartigen Verfahrens
DE102018210315B4 (de) * 2018-06-25 2021-03-18 Carl Zeiss Smt Gmbh Verfahren zur Erfassung einer Struktur einer Lithografiemaske sowie Vorrichtung zur Durchführung des Verfahrens

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110016437A1 (en) 2008-03-20 2011-01-20 Scheruebl Thomas Method and apparatus for measuring of masks for the photo-lithography
DE102018111972A1 (de) 2018-05-18 2019-05-29 Carl Zeiss Smt Gmbh Verfahren zur Bestimmung von Registrationsfehlern auf einer Photomaske für die Halbleiterlithographie

Also Published As

Publication number Publication date
JP2023129405A (ja) 2023-09-14
KR102638175B1 (ko) 2024-02-19
US20210255541A1 (en) 2021-08-19
CN113340564B (zh) 2024-12-06
US11899358B2 (en) 2024-02-13
TW202136901A (zh) 2021-10-01
DE102020104167A1 (de) 2021-08-19
CN113340564A (zh) 2021-09-03
TWI788783B (zh) 2023-01-01
JP2021144211A (ja) 2021-09-24
KR20210105838A (ko) 2021-08-27

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