CN113340564B - 用于测量光掩模的方法 - Google Patents
用于测量光掩模的方法 Download PDFInfo
- Publication number
- CN113340564B CN113340564B CN202110190657.9A CN202110190657A CN113340564B CN 113340564 B CN113340564 B CN 113340564B CN 202110190657 A CN202110190657 A CN 202110190657A CN 113340564 B CN113340564 B CN 113340564B
- Authority
- CN
- China
- Prior art keywords
- photomask
- mask
- aerial image
- region
- registration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000005259 measurement Methods 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 238000001459 lithography Methods 0.000 claims abstract description 5
- 238000007689 inspection Methods 0.000 claims description 16
- 238000012937 correction Methods 0.000 claims description 14
- 238000013461 design Methods 0.000 claims description 9
- 230000004075 alteration Effects 0.000 claims description 4
- 238000004088 simulation Methods 0.000 description 8
- 238000003384 imaging method Methods 0.000 description 6
- 230000006978 adaptation Effects 0.000 description 5
- 238000005286 illumination Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000013473 artificial intelligence Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000003708 edge detection Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000003702 image correction Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000001454 recorded image Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102020104167.5 | 2020-02-18 | ||
| DE102020104167.5A DE102020104167B4 (de) | 2020-02-18 | 2020-02-18 | Verfahren zur Vermessung von Photomasken |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113340564A CN113340564A (zh) | 2021-09-03 |
| CN113340564B true CN113340564B (zh) | 2024-12-06 |
Family
ID=77060607
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110190657.9A Active CN113340564B (zh) | 2020-02-18 | 2021-02-18 | 用于测量光掩模的方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11899358B2 (https=) |
| JP (2) | JP2021144211A (https=) |
| KR (1) | KR102638175B1 (https=) |
| CN (1) | CN113340564B (https=) |
| DE (1) | DE102020104167B4 (https=) |
| TW (1) | TWI788783B (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102021112547A1 (de) * | 2021-05-14 | 2022-11-17 | Carl Zeiss Smt Gmbh | Verfahren zur Ermittlung eines Registrierungsfehlers |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5504793A (en) * | 1995-02-17 | 1996-04-02 | Loral Federal Systems Company | Magnification correction for 1-X proximity X-Ray lithography |
| JP2017058397A (ja) * | 2015-09-14 | 2017-03-23 | 大日本印刷株式会社 | フォトマスクの転写特性評価方法と転写特性評価システムおよびフォトマスクの製造方法 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000025181A1 (en) * | 1998-10-23 | 2000-05-04 | Hitachi, Ltd. | Method for fabricating semiconductor device and method for forming mask suitable therefor |
| JP2005251983A (ja) * | 2004-03-04 | 2005-09-15 | Renesas Technology Corp | 荷電粒子線マスク検査方法及び荷電粒子線マスク検査装置 |
| US7617477B2 (en) * | 2005-09-09 | 2009-11-10 | Brion Technologies, Inc. | Method for selecting and optimizing exposure tool using an individual mask error model |
| KR100924335B1 (ko) * | 2007-03-27 | 2009-11-02 | 주식회사 하이닉스반도체 | 멀티 도즈 시뮬레이션을 이용한 광근접보정 방법 |
| KR100881194B1 (ko) * | 2007-05-16 | 2009-02-05 | 삼성전자주식회사 | 공간 영상 검사 장비를 이용한 마스크 측정 방법 |
| KR100914297B1 (ko) * | 2007-12-28 | 2009-08-27 | 주식회사 하이닉스반도체 | 웨이퍼 패턴 계측 데이터를 이용한 광근접효과보정 방법 |
| EP2093614A1 (en) | 2008-02-22 | 2009-08-26 | Imec | Split and design guidelines for double patterning |
| DE102008015631A1 (de) | 2008-03-20 | 2009-09-24 | Carl Zeiss Sms Gmbh | Verfahren und Vorrichtung zur Vermessung von Masken für die Photolithographie |
| JP5341399B2 (ja) | 2008-06-03 | 2013-11-13 | ルネサスエレクトロニクス株式会社 | パターン検証方法、パターン検証装置、プログラム、及び半導体装置の製造方法 |
| JP2010038944A (ja) | 2008-07-31 | 2010-02-18 | Toshiba Corp | フォトマスクの製造方法及びこのフォトマスクを用いた半導体デバイスの製造方法 |
| JP5235719B2 (ja) | 2009-02-27 | 2013-07-10 | 株式会社日立ハイテクノロジーズ | パターン測定装置 |
| DE102009038558A1 (de) * | 2009-08-24 | 2011-03-10 | Carl Zeiss Sms Gmbh | Verfahren zur Emulation eines fotolithographischen Prozesses und Maskeninspektionsmikroskop zur Durchführung des Verfahrens |
| US8148682B2 (en) | 2009-12-29 | 2012-04-03 | Hitachi, Ltd. | Method and apparatus for pattern position and overlay measurement |
| JP5254270B2 (ja) * | 2010-04-09 | 2013-08-07 | 株式会社ニューフレアテクノロジー | 検査方法および検査装置 |
| WO2012013638A1 (en) | 2010-07-26 | 2012-02-02 | Carl Zeiss Sms Ltd. | Lithographic targets for uniformity control |
| TWI518446B (zh) | 2011-12-19 | 2016-01-21 | 聯華電子股份有限公司 | 修正佈局圖案的方法以及製作光罩的方法 |
| US8948495B2 (en) | 2012-08-01 | 2015-02-03 | Kla-Tencor Corp. | Inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer |
| JP2016021008A (ja) * | 2014-07-15 | 2016-02-04 | 凸版印刷株式会社 | マルチパターニング用マスクのパターン評価方法およびパターン評価装置 |
| EP3037878B1 (en) | 2014-12-23 | 2020-09-09 | Aselta Nanographics | Method of applying vertex based corrections to a semiconductor design |
| US10572990B2 (en) * | 2017-04-07 | 2020-02-25 | Nuflare Technology, Inc. | Pattern inspection apparatus, pattern position measurement apparatus, aerial image measurement system, method for measuring aerial image, pattern position repairing apparatus, method for repairing pattern position, aerial image data processing apparatus, method for processing aerial image data, pattern exposure apparatus, method for exposing pattern, method for manufacturing mask, and mask manufacturing system |
| US10176966B1 (en) | 2017-04-13 | 2019-01-08 | Fractilia, Llc | Edge detection system |
| CN107121893B (zh) * | 2017-06-12 | 2018-05-25 | 中国科学院上海光学精密机械研究所 | 光刻投影物镜热像差在线预测方法 |
| DE102017115365B4 (de) * | 2017-07-10 | 2020-10-15 | Carl Zeiss Smt Gmbh | Inspektionsvorrichtung für Masken für die Halbleiterlithographie und Verfahren |
| DE102017219217B4 (de) * | 2017-10-26 | 2021-03-25 | Carl Zeiss Smt Gmbh | Masken für die Mikrolithographie, Verfahren zur Bestimmung von Kantenpositionen der Bilder der Strukturen einer derartigen Maske und System zur Durchführung eines derartigen Verfahrens |
| DE102018111972A1 (de) | 2018-05-18 | 2019-05-29 | Carl Zeiss Smt Gmbh | Verfahren zur Bestimmung von Registrationsfehlern auf einer Photomaske für die Halbleiterlithographie |
| DE102018210315B4 (de) * | 2018-06-25 | 2021-03-18 | Carl Zeiss Smt Gmbh | Verfahren zur Erfassung einer Struktur einer Lithografiemaske sowie Vorrichtung zur Durchführung des Verfahrens |
-
2020
- 2020-02-18 DE DE102020104167.5A patent/DE102020104167B4/de active Active
-
2021
- 2021-02-17 US US17/177,411 patent/US11899358B2/en active Active
- 2021-02-18 CN CN202110190657.9A patent/CN113340564B/zh active Active
- 2021-02-18 JP JP2021024113A patent/JP2021144211A/ja active Pending
- 2021-02-18 KR KR1020210021797A patent/KR102638175B1/ko active Active
- 2021-02-18 TW TW110105486A patent/TWI788783B/zh active
-
2023
- 2023-06-13 JP JP2023097154A patent/JP2023129405A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5504793A (en) * | 1995-02-17 | 1996-04-02 | Loral Federal Systems Company | Magnification correction for 1-X proximity X-Ray lithography |
| JP2017058397A (ja) * | 2015-09-14 | 2017-03-23 | 大日本印刷株式会社 | フォトマスクの転写特性評価方法と転写特性評価システムおよびフォトマスクの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2023129405A (ja) | 2023-09-14 |
| KR102638175B1 (ko) | 2024-02-19 |
| US20210255541A1 (en) | 2021-08-19 |
| DE102020104167B4 (de) | 2023-01-26 |
| US11899358B2 (en) | 2024-02-13 |
| TW202136901A (zh) | 2021-10-01 |
| DE102020104167A1 (de) | 2021-08-19 |
| CN113340564A (zh) | 2021-09-03 |
| TWI788783B (zh) | 2023-01-01 |
| JP2021144211A (ja) | 2021-09-24 |
| KR20210105838A (ko) | 2021-08-27 |
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