JP2023037280A5 - - Google Patents

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Publication number
JP2023037280A5
JP2023037280A5 JP2021143928A JP2021143928A JP2023037280A5 JP 2023037280 A5 JP2023037280 A5 JP 2023037280A5 JP 2021143928 A JP2021143928 A JP 2021143928A JP 2021143928 A JP2021143928 A JP 2021143928A JP 2023037280 A5 JP2023037280 A5 JP 2023037280A5
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JP
Japan
Prior art keywords
semiconductor
semiconductor chip
uneven structure
electrode
protective film
Prior art date
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Application number
JP2021143928A
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English (en)
Japanese (ja)
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JP2023037280A (ja
JP7586034B2 (ja
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Publication date
Priority claimed from JP2021143928A external-priority patent/JP7586034B2/ja
Priority to JP2021143928A priority Critical patent/JP7586034B2/ja
Application filed filed Critical
Priority to PCT/JP2022/032778 priority patent/WO2023033047A1/ja
Priority to CN202280059482.0A priority patent/CN117916892A/zh
Publication of JP2023037280A publication Critical patent/JP2023037280A/ja
Publication of JP2023037280A5 publication Critical patent/JP2023037280A5/ja
Priority to US18/420,125 priority patent/US20240203811A1/en
Priority to JP2024191937A priority patent/JP7806870B2/ja
Publication of JP7586034B2 publication Critical patent/JP7586034B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2021143928A 2021-09-03 2021-09-03 半導体装置 Active JP7586034B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2021143928A JP7586034B2 (ja) 2021-09-03 2021-09-03 半導体装置
PCT/JP2022/032778 WO2023033047A1 (ja) 2021-09-03 2022-08-31 半導体装置
CN202280059482.0A CN117916892A (zh) 2021-09-03 2022-08-31 半导体装置
US18/420,125 US20240203811A1 (en) 2021-09-03 2024-01-23 Semiconductor device
JP2024191937A JP7806870B2 (ja) 2021-09-03 2024-10-31 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021143928A JP7586034B2 (ja) 2021-09-03 2021-09-03 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024191937A Division JP7806870B2 (ja) 2021-09-03 2024-10-31 半導体装置

Publications (3)

Publication Number Publication Date
JP2023037280A JP2023037280A (ja) 2023-03-15
JP2023037280A5 true JP2023037280A5 (https=) 2023-09-07
JP7586034B2 JP7586034B2 (ja) 2024-11-19

Family

ID=85411278

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021143928A Active JP7586034B2 (ja) 2021-09-03 2021-09-03 半導体装置
JP2024191937A Active JP7806870B2 (ja) 2021-09-03 2024-10-31 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024191937A Active JP7806870B2 (ja) 2021-09-03 2024-10-31 半導体装置

Country Status (4)

Country Link
US (1) US20240203811A1 (https=)
JP (2) JP7586034B2 (https=)
CN (1) CN117916892A (https=)
WO (1) WO2023033047A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7717010B2 (ja) * 2022-03-08 2025-08-01 株式会社デンソー 半導体装置
JP2024157928A (ja) * 2023-04-26 2024-11-08 株式会社デンソー 半導体装置およびその製造方法
WO2025224813A1 (ja) * 2024-04-23 2025-10-30 三菱電機株式会社 半導体装置及び半導体装置の製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06140563A (ja) * 1992-10-23 1994-05-20 Rohm Co Ltd 半導体装置
JP3561821B2 (ja) * 1995-12-01 2004-09-02 日本テキサス・インスツルメンツ株式会社 半導体パッケージ装置
JP2005150419A (ja) 2003-11-17 2005-06-09 Nippon Soken Inc 半導体装置
JP4361828B2 (ja) * 2004-04-30 2009-11-11 富士通マイクロエレクトロニクス株式会社 樹脂封止型半導体装置
US7687326B2 (en) * 2004-12-17 2010-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2006196710A (ja) * 2005-01-13 2006-07-27 Fuji Electric Device Technology Co Ltd 半導体素子の製造方法
JP4422671B2 (ja) * 2005-12-06 2010-02-24 トヨタ自動車株式会社 半導体装置とその製造方法
JP4535151B2 (ja) * 2008-03-19 2010-09-01 株式会社デンソー 炭化珪素半導体装置の製造方法
JP5729126B2 (ja) 2011-05-18 2015-06-03 株式会社デンソー 半導体装置の製造方法
JP5970316B2 (ja) * 2012-09-26 2016-08-17 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6102354B2 (ja) * 2013-03-06 2017-03-29 トヨタ自動車株式会社 逆導通ｉｇｂｔ
US9947553B2 (en) * 2015-01-16 2018-04-17 Rohm Co., Ltd. Manufacturing method of semiconductor device and semiconductor device
JP6274154B2 (ja) * 2015-05-27 2018-02-07 トヨタ自動車株式会社 逆導通ｉｇｂｔ
JP2017092212A (ja) * 2015-11-09 2017-05-25 株式会社東芝 半導体装置およびその製造方法
WO2018010056A1 (zh) * 2016-07-11 2018-01-18 刘佩斯 逆导绝缘栅双极型晶体管结构及其对应的制造方法
JP2018022776A (ja) * 2016-08-03 2018-02-08 ルネサスエレクトロニクス株式会社 半導体装置
JP6623973B2 (ja) * 2016-08-19 2019-12-25 信越半導体株式会社 発光素子及び発光素子の製造方法
JPWO2020012810A1 (ja) * 2018-07-11 2021-07-08 住友電気工業株式会社 炭化珪素半導体装置
CN112204726B (zh) * 2018-12-19 2025-04-22 富士电机株式会社 半导体装置
JP7180490B2 (ja) * 2019-03-26 2022-11-30 株式会社デンソー 半導体装置およびその製造方法
JP6887541B1 (ja) * 2020-02-21 2021-06-16 三菱電機株式会社 半導体装置

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