JP7586034B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7586034B2
JP7586034B2 JP2021143928A JP2021143928A JP7586034B2 JP 7586034 B2 JP7586034 B2 JP 7586034B2 JP 2021143928 A JP2021143928 A JP 2021143928A JP 2021143928 A JP2021143928 A JP 2021143928A JP 7586034 B2 JP7586034 B2 JP 7586034B2
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semiconductor
semiconductor chip
protective film
region
uneven structure
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Japanese (ja)
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JP2023037280A (ja
JP2023037280A5 (https=
Inventor
信之 加藤
裕 戸松
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Denso Corp
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Denso Corp
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Priority to JP2021143928A priority Critical patent/JP7586034B2/ja
Priority to PCT/JP2022/032778 priority patent/WO2023033047A1/ja
Priority to CN202280059482.0A priority patent/CN117916892A/zh
Publication of JP2023037280A publication Critical patent/JP2023037280A/ja
Publication of JP2023037280A5 publication Critical patent/JP2023037280A5/ja
Priority to US18/420,125 priority patent/US20240203811A1/en
Priority to JP2024191937A priority patent/JP7806870B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H10P30/2042—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors into crystalline silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/121—Arrangements for protection of devices protecting against mechanical damage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/461—Leadframes specially adapted for cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/465—Bumps or wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/127—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/442—Shapes or dispositions of multiple leadframes in a single chip

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  • Electrodes Of Semiconductors (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2021143928A 2021-09-03 2021-09-03 半導体装置 Active JP7586034B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2021143928A JP7586034B2 (ja) 2021-09-03 2021-09-03 半導体装置
PCT/JP2022/032778 WO2023033047A1 (ja) 2021-09-03 2022-08-31 半導体装置
CN202280059482.0A CN117916892A (zh) 2021-09-03 2022-08-31 半导体装置
US18/420,125 US20240203811A1 (en) 2021-09-03 2024-01-23 Semiconductor device
JP2024191937A JP7806870B2 (ja) 2021-09-03 2024-10-31 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021143928A JP7586034B2 (ja) 2021-09-03 2021-09-03 半導体装置

Related Child Applications (1)

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JP2024191937A Division JP7806870B2 (ja) 2021-09-03 2024-10-31 半導体装置

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JP2023037280A JP2023037280A (ja) 2023-03-15
JP2023037280A5 JP2023037280A5 (https=) 2023-09-07
JP7586034B2 true JP7586034B2 (ja) 2024-11-19

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JP2024191937A Active JP7806870B2 (ja) 2021-09-03 2024-10-31 半導体装置

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US (1) US20240203811A1 (https=)
JP (2) JP7586034B2 (https=)
CN (1) CN117916892A (https=)
WO (1) WO2023033047A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7717010B2 (ja) * 2022-03-08 2025-08-01 株式会社デンソー 半導体装置
JP2024157928A (ja) * 2023-04-26 2024-11-08 株式会社デンソー 半導体装置およびその製造方法
WO2025224813A1 (ja) * 2024-04-23 2025-10-30 三菱電機株式会社 半導体装置及び半導体装置の製造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005317860A (ja) 2004-04-30 2005-11-10 Fujitsu Ltd 樹脂封止型半導体装置
JP2006196710A (ja) 2005-01-13 2006-07-27 Fuji Electric Device Technology Co Ltd 半導体素子の製造方法
JP2007158113A (ja) 2005-12-06 2007-06-21 Toyota Motor Corp 半導体装置とその製造方法
JP2009231321A (ja) 2008-03-19 2009-10-08 Denso Corp 炭化珪素半導体装置およびその製造方法
JP2017092212A (ja) 2015-11-09 2017-05-25 株式会社東芝 半導体装置およびその製造方法
JP2018029162A (ja) 2016-08-19 2018-02-22 信越半導体株式会社 発光素子及び発光素子の製造方法
WO2020012810A1 (ja) 2018-07-11 2020-01-16 住友電気工業株式会社 炭化珪素半導体装置
JP6887541B1 (ja) 2020-02-21 2021-06-16 三菱電機株式会社 半導体装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06140563A (ja) * 1992-10-23 1994-05-20 Rohm Co Ltd 半導体装置
JP3561821B2 (ja) * 1995-12-01 2004-09-02 日本テキサス・インスツルメンツ株式会社 半導体パッケージ装置
JP2005150419A (ja) 2003-11-17 2005-06-09 Nippon Soken Inc 半導体装置
US7687326B2 (en) * 2004-12-17 2010-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5729126B2 (ja) 2011-05-18 2015-06-03 株式会社デンソー 半導体装置の製造方法
JP5970316B2 (ja) * 2012-09-26 2016-08-17 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6102354B2 (ja) * 2013-03-06 2017-03-29 トヨタ自動車株式会社 逆導通ｉｇｂｔ
US9947553B2 (en) * 2015-01-16 2018-04-17 Rohm Co., Ltd. Manufacturing method of semiconductor device and semiconductor device
JP6274154B2 (ja) * 2015-05-27 2018-02-07 トヨタ自動車株式会社 逆導通ｉｇｂｔ
WO2018010056A1 (zh) * 2016-07-11 2018-01-18 刘佩斯 逆导绝缘栅双极型晶体管结构及其对应的制造方法
JP2018022776A (ja) * 2016-08-03 2018-02-08 ルネサスエレクトロニクス株式会社 半導体装置
CN112204726B (zh) * 2018-12-19 2025-04-22 富士电机株式会社 半导体装置
JP7180490B2 (ja) * 2019-03-26 2022-11-30 株式会社デンソー 半導体装置およびその製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005317860A (ja) 2004-04-30 2005-11-10 Fujitsu Ltd 樹脂封止型半導体装置
JP2006196710A (ja) 2005-01-13 2006-07-27 Fuji Electric Device Technology Co Ltd 半導体素子の製造方法
JP2007158113A (ja) 2005-12-06 2007-06-21 Toyota Motor Corp 半導体装置とその製造方法
JP2009231321A (ja) 2008-03-19 2009-10-08 Denso Corp 炭化珪素半導体装置およびその製造方法
JP2017092212A (ja) 2015-11-09 2017-05-25 株式会社東芝 半導体装置およびその製造方法
JP2018029162A (ja) 2016-08-19 2018-02-22 信越半導体株式会社 発光素子及び発光素子の製造方法
WO2020012810A1 (ja) 2018-07-11 2020-01-16 住友電気工業株式会社 炭化珪素半導体装置
JP6887541B1 (ja) 2020-02-21 2021-06-16 三菱電機株式会社 半導体装置

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Publication number Publication date
JP2023037280A (ja) 2023-03-15
JP2025016654A (ja) 2025-02-04
WO2023033047A1 (ja) 2023-03-09
US20240203811A1 (en) 2024-06-20
CN117916892A (zh) 2024-04-19
JP7806870B2 (ja) 2026-01-27

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