JP2022552203A5 - - Google Patents
Info
- Publication number
- JP2022552203A5 JP2022552203A5 JP2022520984A JP2022520984A JP2022552203A5 JP 2022552203 A5 JP2022552203 A5 JP 2022552203A5 JP 2022520984 A JP2022520984 A JP 2022520984A JP 2022520984 A JP2022520984 A JP 2022520984A JP 2022552203 A5 JP2022552203 A5 JP 2022552203A5
- Authority
- JP
- Japan
- Prior art keywords
- deposition
- precursor
- semiconductor substrate
- phase
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/595,916 | 2019-10-08 | ||
| US16/595,916 US11361992B2 (en) | 2019-10-08 | 2019-10-08 | Conformal titanium nitride-based thin films and methods of forming same |
| PCT/US2020/050639 WO2021071628A1 (en) | 2019-10-08 | 2020-09-14 | Conformal titanium nitride-based thin films and methods of forming same |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2026017703A Division JP2026071335A (ja) | 2019-10-08 | 2026-02-05 | コンフォーマルな窒化チタン系薄膜及びその形成方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022552203A JP2022552203A (ja) | 2022-12-15 |
| JP2022552203A5 true JP2022552203A5 (enExample) | 2023-09-20 |
| JP7817156B2 JP7817156B2 (ja) | 2026-02-18 |
Family
ID=75274995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022520984A Active JP7817156B2 (ja) | 2019-10-08 | 2020-09-14 | コンフォーマルな窒化チタン系薄膜及びその形成方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US11361992B2 (enExample) |
| JP (1) | JP7817156B2 (enExample) |
| KR (1) | KR20220078671A (enExample) |
| CN (1) | CN114746575A (enExample) |
| TW (1) | TW202129843A (enExample) |
| WO (1) | WO2021071628A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12431388B2 (en) | 2019-10-08 | 2025-09-30 | Eugenus, Inc. | Conformal titanium silicon nitride-based thin films and methods of forming same |
| US12444648B2 (en) | 2019-10-08 | 2025-10-14 | Eugenus, Inc. | Conformal titanium silicon nitride-based thin films and methods of forming same |
| US11361992B2 (en) | 2019-10-08 | 2022-06-14 | Eugenus, Inc. | Conformal titanium nitride-based thin films and methods of forming same |
| US20210358919A1 (en) * | 2020-05-14 | 2021-11-18 | Micron Technology, Inc. | Methods of forming electronic apparatus with titanium nitride conductive structures, and related electronic apparatus and systems |
| US12112983B2 (en) * | 2020-08-26 | 2024-10-08 | Macom Technology Solutions Holdings, Inc. | Atomic layer deposition of barrier metal layer for electrode of gallium nitride material device |
| JP7647185B2 (ja) * | 2021-03-09 | 2025-03-18 | 東京エレクトロン株式会社 | タングステン膜を成膜する方法、及びシステム |
| US20230032292A1 (en) * | 2021-07-28 | 2023-02-02 | Changxin Memory Technologies, Inc. | Method for forming thin film by deposition process |
| CN114628409B (zh) * | 2022-03-17 | 2025-09-19 | 京东方科技集团股份有限公司 | 一种显示基板及其制备方法、显示面板 |
| US20230395429A1 (en) * | 2022-06-06 | 2023-12-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Conductive structures and methods of forming the same |
| WO2024064301A1 (en) * | 2022-09-23 | 2024-03-28 | Applied Materials, Inc. | Middle of line dielectric layer engineering for via void prevention |
| US20250174456A1 (en) * | 2023-11-24 | 2025-05-29 | Applied Materials, Inc. | Thermal cvd of titanium silicide methods to form semiconductor structures |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100385946B1 (ko) * | 1999-12-08 | 2003-06-02 | 삼성전자주식회사 | 원자층 증착법을 이용한 금속층 형성방법 및 그 금속층을장벽금속층, 커패시터의 상부전극, 또는 하부전극으로구비한 반도체 소자 |
| US7105434B2 (en) * | 1999-10-02 | 2006-09-12 | Uri Cohen | Advanced seed layery for metallic interconnects |
| US6482733B2 (en) * | 2000-05-15 | 2002-11-19 | Asm Microchemistry Oy | Protective layers prior to alternating layer deposition |
| KR100407678B1 (ko) | 2000-06-15 | 2003-12-01 | 주식회사 하이닉스반도체 | 반도체 소자의 구리 금속배선 형성 방법 |
| US6977224B2 (en) * | 2000-12-28 | 2005-12-20 | Intel Corporation | Method of electroless introduction of interconnect structures |
| US6821884B2 (en) * | 2001-02-15 | 2004-11-23 | Interuniversitair Microelektronica Centrum (Imec) | Method of fabricating a semiconductor device |
| TW502381B (en) * | 2001-04-24 | 2002-09-11 | United Microelectronics Corp | Manufacturing method of damascene structure |
| US6831003B1 (en) | 2002-05-31 | 2004-12-14 | Advanced Micro Devices, Inc. | Continuous barrier for interconnect structure formed in porous dielectric material with minimized electromigration |
| US6943097B2 (en) | 2003-08-19 | 2005-09-13 | International Business Machines Corporation | Atomic layer deposition of metallic contacts, gates and diffusion barriers |
| KR100840665B1 (ko) * | 2007-05-18 | 2008-06-24 | 주식회사 동부하이텍 | 반도체 소자의 제조방법 및 이를 이용한 시스템 인 패키지 |
| US8058164B2 (en) | 2007-06-04 | 2011-11-15 | Lam Research Corporation | Methods of fabricating electronic devices using direct copper plating |
| US8247030B2 (en) * | 2008-03-07 | 2012-08-21 | Tokyo Electron Limited | Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer |
| US7833906B2 (en) * | 2008-12-11 | 2010-11-16 | Asm International N.V. | Titanium silicon nitride deposition |
| KR101189642B1 (ko) | 2012-04-09 | 2012-10-12 | 아익스트론 에스이 | 원자층 증착법을 이용한 ＴｉＳｉＮ 박막의 형성방법 |
| KR101950867B1 (ko) | 2012-08-27 | 2019-04-26 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
| US9412602B2 (en) | 2013-03-13 | 2016-08-09 | Asm Ip Holding B.V. | Deposition of smooth metal nitride films |
| DE112014006897T5 (de) * | 2014-08-27 | 2017-05-11 | Ultratech, Inc. | Verbessertes Kontaktloch durch Silizium |
| US10355139B2 (en) * | 2016-06-28 | 2019-07-16 | Sandisk Technologies Llc | Three-dimensional memory device with amorphous barrier layer and method of making thereof |
| KR20190090845A (ko) * | 2016-12-06 | 2019-08-02 | 큐로미스, 인크 | 집적된 클램프 다이오드를 포함하는 횡형 고 전자 이동도 트랜지스터 |
| US11401607B2 (en) | 2017-06-02 | 2022-08-02 | Eugenus, Inc. | TiSiN coating method |
| US11942365B2 (en) | 2017-06-02 | 2024-03-26 | Eugenus, Inc. | Multi-region diffusion barrier containing titanium, silicon and nitrogen |
| US11075275B2 (en) | 2018-03-01 | 2021-07-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metal gate fill for short-channel and long-channel semiconductor devices |
| US11361992B2 (en) | 2019-10-08 | 2022-06-14 | Eugenus, Inc. | Conformal titanium nitride-based thin films and methods of forming same |
-
2019
- 2019-10-08 US US16/595,916 patent/US11361992B2/en active Active
-
2020
- 2020-09-14 JP JP2022520984A patent/JP7817156B2/ja active Active
- 2020-09-14 CN CN202080081326.5A patent/CN114746575A/zh active Pending
- 2020-09-14 KR KR1020227015426A patent/KR20220078671A/ko not_active Ceased
- 2020-09-14 WO PCT/US2020/050639 patent/WO2021071628A1/en not_active Ceased
- 2020-10-07 TW TW109134681A patent/TW202129843A/zh unknown
-
2022
- 2022-06-10 US US17/837,518 patent/US12165918B2/en active Active
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