JP2022552204A5 - - Google Patents
Info
- Publication number
- JP2022552204A5 JP2022552204A5 JP2022520985A JP2022520985A JP2022552204A5 JP 2022552204 A5 JP2022552204 A5 JP 2022552204A5 JP 2022520985 A JP2022520985 A JP 2022520985A JP 2022520985 A JP2022520985 A JP 2022520985A JP 2022552204 A5 JP2022552204 A5 JP 2022552204A5
- Authority
- JP
- Japan
- Prior art keywords
- precursor
- thin film
- vapor deposition
- exposure
- periodic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025180204A JP2026012867A (ja) | 2019-10-08 | 2025-10-27 | コンフォーマルかつ平滑な窒化チタン層及びその形成方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/595,945 US11482413B2 (en) | 2019-10-08 | 2019-10-08 | Conformal and smooth titanium nitride layers and methods of forming the same |
| US16/595,945 | 2019-10-08 | ||
| PCT/US2020/050627 WO2021071625A1 (en) | 2019-10-08 | 2020-09-14 | Conformal and smooth titanium nitride layers and methods of forming the same |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025180204A Division JP2026012867A (ja) | 2019-10-08 | 2025-10-27 | コンフォーマルかつ平滑な窒化チタン層及びその形成方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022552204A JP2022552204A (ja) | 2022-12-15 |
| JP2022552204A5 true JP2022552204A5 (enExample) | 2023-09-20 |
| JP7766024B2 JP7766024B2 (ja) | 2025-11-07 |
Family
ID=75274960
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022520985A Active JP7766024B2 (ja) | 2019-10-08 | 2020-09-14 | コンフォーマルかつ平滑な窒化チタン層及びその形成方法 |
| JP2025180204A Pending JP2026012867A (ja) | 2019-10-08 | 2025-10-27 | コンフォーマルかつ平滑な窒化チタン層及びその形成方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025180204A Pending JP2026012867A (ja) | 2019-10-08 | 2025-10-27 | コンフォーマルかつ平滑な窒化チタン層及びその形成方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US11482413B2 (enExample) |
| JP (2) | JP7766024B2 (enExample) |
| KR (1) | KR20220082859A (enExample) |
| CN (1) | CN114729451A (enExample) |
| TW (1) | TWI872126B (enExample) |
| WO (1) | WO2021071625A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12431388B2 (en) | 2019-10-08 | 2025-09-30 | Eugenus, Inc. | Conformal titanium silicon nitride-based thin films and methods of forming same |
| US12283486B2 (en) | 2019-10-08 | 2025-04-22 | Eugenus, Inc. | Conformal and smooth titanium nitride layers and methods of forming the same |
| US12272599B2 (en) | 2019-10-08 | 2025-04-08 | Eugenus, Inc. | Conformal and smooth titanium nitride layers and methods of forming the same |
| US12444648B2 (en) | 2019-10-08 | 2025-10-14 | Eugenus, Inc. | Conformal titanium silicon nitride-based thin films and methods of forming same |
| US11482413B2 (en) | 2019-10-08 | 2022-10-25 | Eugenus, Inc. | Conformal and smooth titanium nitride layers and methods of forming the same |
| KR102254394B1 (ko) * | 2020-07-16 | 2021-05-24 | 솔브레인 주식회사 | 박막 형성용 성장 억제제, 이를 이용한 박막 형성 방법 및 이로부터 제조된 반도체 기판 |
| US20240234482A9 (en) * | 2022-10-19 | 2024-07-11 | Micron Technology, Inc. | Microelectronic devices including capacitors, and related electronic systems and methods |
| US20250054748A1 (en) * | 2023-08-09 | 2025-02-13 | Applied Materials, Inc. | Adhesion improvements in metal-containing hardmasks |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6221174B1 (en) | 1999-02-11 | 2001-04-24 | Applied Materials, Inc. | Method of performing titanium/titanium nitride integration |
| KR100439028B1 (ko) | 2001-12-27 | 2004-07-03 | 삼성전자주식회사 | 2단계 증착방식을 이용한 반도체 장치의 제조방법 |
| US20040013803A1 (en) | 2002-07-16 | 2004-01-22 | Applied Materials, Inc. | Formation of titanium nitride films using a cyclical deposition process |
| US6943097B2 (en) | 2003-08-19 | 2005-09-13 | International Business Machines Corporation | Atomic layer deposition of metallic contacts, gates and diffusion barriers |
| US7235482B2 (en) | 2003-09-08 | 2007-06-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology |
| KR100589285B1 (ko) | 2004-08-19 | 2006-06-14 | 주식회사 아이피에스 | 다중 적층막 구조의 금속 질화 막 증착 방법 |
| US7966969B2 (en) | 2004-09-22 | 2011-06-28 | Asm International N.V. | Deposition of TiN films in a batch reactor |
| US20060128127A1 (en) | 2004-12-13 | 2006-06-15 | Jung-Hun Seo | Method of depositing a metal compound layer and apparatus for depositing a metal compound layer |
| US7776733B2 (en) | 2007-05-02 | 2010-08-17 | Tokyo Electron Limited | Method for depositing titanium nitride films for semiconductor manufacturing |
| US20080305561A1 (en) | 2007-06-07 | 2008-12-11 | Shrinivas Govindarajan | Methods of controlling film deposition using atomic layer deposition |
| KR20110084275A (ko) | 2008-10-27 | 2011-07-21 | 어플라이드 머티어리얼스, 인코포레이티드 | 삼원 화합물의 기상 증착 방법 |
| JP4647682B2 (ja) | 2008-11-12 | 2011-03-09 | パナソニック株式会社 | 半導体装置及びその製造方法 |
| JP5774822B2 (ja) | 2009-05-25 | 2015-09-09 | 株式会社日立国際電気 | 半導体デバイスの製造方法及び基板処理装置 |
| JP5087657B2 (ja) * | 2009-08-04 | 2012-12-05 | 株式会社日立国際電気 | 半導体装置の製造方法及び基板処理装置 |
| JP2011168881A (ja) | 2010-01-25 | 2011-09-01 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
| US8728956B2 (en) | 2010-04-15 | 2014-05-20 | Novellus Systems, Inc. | Plasma activated conformal film deposition |
| JP2012193445A (ja) | 2011-02-28 | 2012-10-11 | Tokyo Electron Ltd | 窒化チタン膜の形成方法、窒化チタン膜の形成装置及びプログラム |
| JP2013133521A (ja) | 2011-12-27 | 2013-07-08 | Tokyo Electron Ltd | 成膜方法 |
| US9355839B2 (en) * | 2012-10-23 | 2016-05-31 | Lam Research Corporation | Sub-saturated atomic layer deposition and conformal film deposition |
| JP6118197B2 (ja) | 2013-07-02 | 2017-04-19 | 東京エレクトロン株式会社 | 成膜方法 |
| JP6258657B2 (ja) | 2013-10-18 | 2018-01-10 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
| US9745658B2 (en) | 2013-11-25 | 2017-08-29 | Lam Research Corporation | Chamber undercoat preparation method for low temperature ALD films |
| WO2015145751A1 (ja) | 2014-03-28 | 2015-10-01 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法および記録媒体 |
| KR102065243B1 (ko) | 2017-05-01 | 2020-01-10 | 도쿄엘렉트론가부시키가이샤 | 성막 방법 및 성막 장치 |
| KR102646467B1 (ko) * | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
| US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US12272599B2 (en) | 2019-10-08 | 2025-04-08 | Eugenus, Inc. | Conformal and smooth titanium nitride layers and methods of forming the same |
| US12283486B2 (en) | 2019-10-08 | 2025-04-22 | Eugenus, Inc. | Conformal and smooth titanium nitride layers and methods of forming the same |
| US11482413B2 (en) | 2019-10-08 | 2022-10-25 | Eugenus, Inc. | Conformal and smooth titanium nitride layers and methods of forming the same |
| JP2023552983A (ja) | 2020-12-10 | 2023-12-20 | ユージェヌス インコーポレイテッド | コンフォーマルかつ平滑な窒化チタン層及びその形成方法 |
-
2019
- 2019-10-08 US US16/595,945 patent/US11482413B2/en active Active
-
2020
- 2020-09-14 WO PCT/US2020/050627 patent/WO2021071625A1/en not_active Ceased
- 2020-09-14 JP JP2022520985A patent/JP7766024B2/ja active Active
- 2020-09-14 KR KR1020227015428A patent/KR20220082859A/ko active Pending
- 2020-09-14 CN CN202080081214.XA patent/CN114729451A/zh active Pending
- 2020-10-07 TW TW109134683A patent/TWI872126B/zh active
-
2022
- 2022-09-30 US US17/937,118 patent/US12308226B2/en active Active
-
2025
- 2025-10-27 JP JP2025180204A patent/JP2026012867A/ja active Pending
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