JP2023552983A5 - - Google Patents
Info
- Publication number
- JP2023552983A5 JP2023552983A5 JP2023533612A JP2023533612A JP2023552983A5 JP 2023552983 A5 JP2023552983 A5 JP 2023552983A5 JP 2023533612 A JP2023533612 A JP 2023533612A JP 2023533612 A JP2023533612 A JP 2023533612A JP 2023552983 A5 JP2023552983 A5 JP 2023552983A5
- Authority
- JP
- Japan
- Prior art keywords
- flow rate
- tin
- thin film
- precursor
- ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202063123733P | 2020-12-10 | 2020-12-10 | |
| US63/123,733 | 2020-12-10 | ||
| PCT/US2021/062679 WO2022125820A1 (en) | 2020-12-10 | 2021-12-09 | Conformal and smooth titanium nitride layers and methods of forming the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2023552983A JP2023552983A (ja) | 2023-12-20 |
| JP2023552983A5 true JP2023552983A5 (enExample) | 2024-12-02 |
Family
ID=81974835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023533612A Pending JP2023552983A (ja) | 2020-12-10 | 2021-12-09 | コンフォーマルかつ平滑な窒化チタン層及びその形成方法 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP4259845A4 (enExample) |
| JP (1) | JP2023552983A (enExample) |
| KR (1) | KR20230125798A (enExample) |
| CN (1) | CN116745461A (enExample) |
| TW (1) | TW202240006A (enExample) |
| WO (1) | WO2022125820A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12283486B2 (en) | 2019-10-08 | 2025-04-22 | Eugenus, Inc. | Conformal and smooth titanium nitride layers and methods of forming the same |
| US12272599B2 (en) | 2019-10-08 | 2025-04-08 | Eugenus, Inc. | Conformal and smooth titanium nitride layers and methods of forming the same |
| US11482413B2 (en) | 2019-10-08 | 2022-10-25 | Eugenus, Inc. | Conformal and smooth titanium nitride layers and methods of forming the same |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100439028B1 (ko) * | 2001-12-27 | 2004-07-03 | 삼성전자주식회사 | 2단계 증착방식을 이용한 반도체 장치의 제조방법 |
| US20040013803A1 (en) * | 2002-07-16 | 2004-01-22 | Applied Materials, Inc. | Formation of titanium nitride films using a cyclical deposition process |
| US6943097B2 (en) * | 2003-08-19 | 2005-09-13 | International Business Machines Corporation | Atomic layer deposition of metallic contacts, gates and diffusion barriers |
| US20060128127A1 (en) * | 2004-12-13 | 2006-06-15 | Jung-Hun Seo | Method of depositing a metal compound layer and apparatus for depositing a metal compound layer |
| US20080305561A1 (en) * | 2007-06-07 | 2008-12-11 | Shrinivas Govindarajan | Methods of controlling film deposition using atomic layer deposition |
| JP5087657B2 (ja) * | 2009-08-04 | 2012-12-05 | 株式会社日立国際電気 | 半導体装置の製造方法及び基板処理装置 |
| US8728956B2 (en) * | 2010-04-15 | 2014-05-20 | Novellus Systems, Inc. | Plasma activated conformal film deposition |
| JP2013133521A (ja) * | 2011-12-27 | 2013-07-08 | Tokyo Electron Ltd | 成膜方法 |
| JP6416031B2 (ja) * | 2015-03-30 | 2018-10-31 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体デバイスの製造方法、基板処理装置およびプログラム |
| KR102065243B1 (ko) * | 2017-05-01 | 2020-01-10 | 도쿄엘렉트론가부시키가이샤 | 성막 방법 및 성막 장치 |
| KR102646467B1 (ko) * | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
-
2021
- 2021-12-09 JP JP2023533612A patent/JP2023552983A/ja active Pending
- 2021-12-09 KR KR1020237022834A patent/KR20230125798A/ko active Pending
- 2021-12-09 EP EP21904428.6A patent/EP4259845A4/en active Pending
- 2021-12-09 WO PCT/US2021/062679 patent/WO2022125820A1/en not_active Ceased
- 2021-12-09 CN CN202180083129.1A patent/CN116745461A/zh active Pending
- 2021-12-10 TW TW110146342A patent/TW202240006A/zh unknown
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2023552983A5 (enExample) | ||
| US20220102140A1 (en) | Method for forming an ultraviolet radiation responsive metal oxide-containing film | |
| JP4358492B2 (ja) | 熱化学気相成長法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法 | |
| TWI685584B (zh) | 用於積體電路製造的方法 | |
| TWI361226B (en) | Pretreatment processes within a batch ald reactor | |
| TWI794551B (zh) | 形成氮化矽膜之方法 | |
| JP2022552204A5 (enExample) | ||
| TWI887287B (zh) | 生長低電阻率含金屬膜之方法 | |
| US6162501A (en) | Method for manufacturing thin films of multi-element group oxide or nitride | |
| JP2021061414A5 (enExample) | ||
| TWI687536B (zh) | 沈積鉭鋁薄膜的製程 | |
| JP4474068B2 (ja) | 半導体素子のアルミニウム酸化膜形成方法 | |
| KR20080050510A (ko) | 배치 ａｌｄ 반응기에 대한 처리 공정 | |
| TW202041705A (zh) | 氧化物與氮化物之原子層沉積 | |
| JP2024110917A (ja) | 多層疎水膜 | |
| JPS61234534A (ja) | 窒化珪素被膜作成方法 | |
| CN110468388A (zh) | 原子层沉积法形成氮化物膜的方法 | |
| JP7809827B2 (ja) | ケイ素リッチ窒化ケイ素膜を調製するための方法 | |
| KR102855013B1 (ko) | N-알킬 치환된 퍼하이드리도사이클로트리실라잔으로부터의 실리콘-기반 박막 | |
| JPS61113770A (ja) | 化学蒸着を制御する方法 | |
| KR102953849B1 (ko) | 산화물들 및 질화물들의 원자층 퇴적 | |
| WO2004079042A1 (ja) | 薄膜の形成方法、薄膜の形成装置、プログラム及びコンピュータ読取り可能情報記録媒体 | |
| JP2573985B2 (ja) | Ｘ線マスク | |
| TW202605197A (zh) | 用於選擇性磊晶沉積之抑制劑 | |
| TW527647B (en) | Thin film deposition method |