JP2024517581A5 - - Google Patents
Info
- Publication number
- JP2024517581A5 JP2024517581A5 JP2023560920A JP2023560920A JP2024517581A5 JP 2024517581 A5 JP2024517581 A5 JP 2024517581A5 JP 2023560920 A JP2023560920 A JP 2023560920A JP 2023560920 A JP2023560920 A JP 2023560920A JP 2024517581 A5 JP2024517581 A5 JP 2024517581A5
- Authority
- JP
- Japan
- Prior art keywords
- precursor
- semiconductor substrate
- deposition
- exposing
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163172002P | 2021-04-07 | 2021-04-07 | |
| US202163171970P | 2021-04-07 | 2021-04-07 | |
| US63/171,970 | 2021-04-07 | ||
| US63/172,002 | 2021-04-07 | ||
| PCT/US2022/071574 WO2022217240A1 (en) | 2021-04-07 | 2022-04-06 | Conformal titanium silicon nitride-based thin films and methods of forming same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024517581A JP2024517581A (ja) | 2024-04-23 |
| JP2024517581A5 true JP2024517581A5 (enExample) | 2025-03-05 |
Family
ID=83546628
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023560921A Active JP7835776B2 (ja) | 2021-04-07 | 2022-04-06 | コンフォーマルな窒化チタンシリコン系薄膜及びその形成方法 |
| JP2023560920A Pending JP2024517581A (ja) | 2021-04-07 | 2022-04-06 | コンフォーマルな窒化チタンシリコン系薄膜及びその形成方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023560921A Active JP7835776B2 (ja) | 2021-04-07 | 2022-04-06 | コンフォーマルな窒化チタンシリコン系薄膜及びその形成方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (2) | JP7835776B2 (enExample) |
| KR (2) | KR20230165332A (enExample) |
| TW (2) | TW202307250A (enExample) |
| WO (2) | WO2022217240A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12431388B2 (en) | 2019-10-08 | 2025-09-30 | Eugenus, Inc. | Conformal titanium silicon nitride-based thin films and methods of forming same |
| US12444648B2 (en) | 2019-10-08 | 2025-10-14 | Eugenus, Inc. | Conformal titanium silicon nitride-based thin films and methods of forming same |
| CN115985764A (zh) * | 2022-12-15 | 2023-04-18 | 拓荆科技股份有限公司 | 一种半导体阻挡层的制备方法及阻挡层薄膜 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6911391B2 (en) * | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| US20040009336A1 (en) | 2002-07-11 | 2004-01-15 | Applied Materials, Inc. | Titanium silicon nitride (TISIN) barrier layer for copper diffusion |
| US6784096B2 (en) * | 2002-09-11 | 2004-08-31 | Applied Materials, Inc. | Methods and apparatus for forming barrier layers in high aspect ratio vias |
| US7981473B2 (en) * | 2003-04-23 | 2011-07-19 | Aixtron, Inc. | Transient enhanced atomic layer deposition |
| JP2005011940A (ja) * | 2003-06-18 | 2005-01-13 | Tokyo Electron Ltd | 基板処理方法、半導体装置の製造方法および半導体装置 |
| US7833906B2 (en) * | 2008-12-11 | 2010-11-16 | Asm International N.V. | Titanium silicon nitride deposition |
| KR101189642B1 (ko) * | 2012-04-09 | 2012-10-12 | 아익스트론 에스이 | 원자층 증착법을 이용한 ＴｉＳｉＮ 박막의 형성방법 |
| US10355139B2 (en) * | 2016-06-28 | 2019-07-16 | Sandisk Technologies Llc | Three-dimensional memory device with amorphous barrier layer and method of making thereof |
| JP6755164B2 (ja) | 2016-11-14 | 2020-09-16 | 東京エレクトロン株式会社 | ＴｉＮ系膜およびその形成方法 |
| US11942365B2 (en) * | 2017-06-02 | 2024-03-26 | Eugenus, Inc. | Multi-region diffusion barrier containing titanium, silicon and nitrogen |
| US11401607B2 (en) * | 2017-06-02 | 2022-08-02 | Eugenus, Inc. | TiSiN coating method |
| JP6826173B2 (ja) * | 2019-09-17 | 2021-02-03 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
-
2022
- 2022-04-06 JP JP2023560921A patent/JP7835776B2/ja active Active
- 2022-04-06 WO PCT/US2022/071574 patent/WO2022217240A1/en not_active Ceased
- 2022-04-06 KR KR1020237038164A patent/KR20230165332A/ko active Pending
- 2022-04-06 WO PCT/US2022/071578 patent/WO2022217241A1/en not_active Ceased
- 2022-04-06 JP JP2023560920A patent/JP2024517581A/ja active Pending
- 2022-04-06 KR KR1020237038165A patent/KR20230165841A/ko active Pending
- 2022-04-07 TW TW111113319A patent/TW202307250A/zh unknown
- 2022-04-07 TW TW111113316A patent/TW202307249A/zh unknown
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