JP7835776B2 - コンフォーマルな窒化チタンシリコン系薄膜及びその形成方法 - Google Patents

コンフォーマルな窒化チタンシリコン系薄膜及びその形成方法

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Publication number
JP7835776B2
JP7835776B2 JP2023560921A JP2023560921A JP7835776B2 JP 7835776 B2 JP7835776 B2 JP 7835776B2 JP 2023560921 A JP2023560921 A JP 2023560921A JP 2023560921 A JP2023560921 A JP 2023560921A JP 7835776 B2 JP7835776 B2 JP 7835776B2
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Japan
Prior art keywords
precursor
semiconductor substrate
deposition
exposing
diffusion barrier
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JP2023560921A
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English (en)
Japanese (ja)
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JP2024516091A5 (enExample
JP2024516091A (ja
Inventor
ドハムドヘレ、アジット
キム、ハエ・ヤング
チョウ、ヒュンチョル
ニー、ブンセン・ビー．
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ユージェヌス インコーポレイテッド
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP2023560921A 2021-04-07 2022-04-06 コンフォーマルな窒化チタンシリコン系薄膜及びその形成方法 Active JP7835776B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202163172002P 2021-04-07 2021-04-07
US202163171970P 2021-04-07 2021-04-07
US63/171,970 2021-04-07
US63/172,002 2021-04-07
PCT/US2022/071578 WO2022217241A1 (en) 2021-04-07 2022-04-06 Conformal titanium silicon nitride-based thin films and methods of forming same

Publications (3)

Publication Number Publication Date
JP2024516091A JP2024516091A (ja) 2024-04-12
JP2024516091A5 JP2024516091A5 (enExample) 2024-10-30
JP7835776B2 true JP7835776B2 (ja) 2026-03-25

Family

ID=83546628

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2023560921A Active JP7835776B2 (ja) 2021-04-07 2022-04-06 コンフォーマルな窒化チタンシリコン系薄膜及びその形成方法
JP2023560920A Pending JP2024517581A (ja) 2021-04-07 2022-04-06 コンフォーマルな窒化チタンシリコン系薄膜及びその形成方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023560920A Pending JP2024517581A (ja) 2021-04-07 2022-04-06 コンフォーマルな窒化チタンシリコン系薄膜及びその形成方法

Country Status (4)

Country Link
JP (2) JP7835776B2 (enExample)
KR (2) KR20230165332A (enExample)
TW (2) TW202307250A (enExample)
WO (2) WO2022217240A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12431388B2 (en) 2019-10-08 2025-09-30 Eugenus, Inc. Conformal titanium silicon nitride-based thin films and methods of forming same
US12444648B2 (en) 2019-10-08 2025-10-14 Eugenus, Inc. Conformal titanium silicon nitride-based thin films and methods of forming same
CN115985764A (zh) * 2022-12-15 2023-04-18 拓荆科技股份有限公司 一种半导体阻挡层的制备方法及阻挡层薄膜

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040009336A1 (en) 2002-07-11 2004-01-15 Applied Materials, Inc. Titanium silicon nitride (TISIN) barrier layer for copper diffusion
JP2005011940A (ja) 2003-06-18 2005-01-13 Tokyo Electron Ltd 基板処理方法、半導体装置の製造方法および半導体装置
US20050277290A1 (en) 2002-01-26 2005-12-15 Applied Materials, Inc. Integration of titanium and titanium nitride layers
JP2015514161A (ja) 2012-04-09 2015-05-18 アイクストロン、エスイー 原子層堆積法の使用によるＴｉＳｉＮ薄層の形成方法
JP2018080349A (ja) 2016-11-14 2018-05-24 東京エレクトロン株式会社 ＴｉＮ系膜およびその形成方法
JP2020522611A (ja) 2017-06-02 2020-07-30 ユージェヌス インコーポレイテッド チタン、ケイ素及び窒素を含む多領域拡散バリア

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6784096B2 (en) * 2002-09-11 2004-08-31 Applied Materials, Inc. Methods and apparatus for forming barrier layers in high aspect ratio vias
US7981473B2 (en) * 2003-04-23 2011-07-19 Aixtron, Inc. Transient enhanced atomic layer deposition
US7833906B2 (en) * 2008-12-11 2010-11-16 Asm International N.V. Titanium silicon nitride deposition
US10355139B2 (en) * 2016-06-28 2019-07-16 Sandisk Technologies Llc Three-dimensional memory device with amorphous barrier layer and method of making thereof
US11942365B2 (en) * 2017-06-02 2024-03-26 Eugenus, Inc. Multi-region diffusion barrier containing titanium, silicon and nitrogen
JP6826173B2 (ja) * 2019-09-17 2021-02-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050277290A1 (en) 2002-01-26 2005-12-15 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US20040009336A1 (en) 2002-07-11 2004-01-15 Applied Materials, Inc. Titanium silicon nitride (TISIN) barrier layer for copper diffusion
JP2005011940A (ja) 2003-06-18 2005-01-13 Tokyo Electron Ltd 基板処理方法、半導体装置の製造方法および半導体装置
JP2015514161A (ja) 2012-04-09 2015-05-18 アイクストロン、エスイー 原子層堆積法の使用によるＴｉＳｉＮ薄層の形成方法
JP2018080349A (ja) 2016-11-14 2018-05-24 東京エレクトロン株式会社 ＴｉＮ系膜およびその形成方法
JP2020522611A (ja) 2017-06-02 2020-07-30 ユージェヌス インコーポレイテッド チタン、ケイ素及び窒素を含む多領域拡散バリア

Also Published As

Publication number Publication date
WO2022217240A1 (en) 2022-10-13
WO2022217241A1 (en) 2022-10-13
TW202307250A (zh) 2023-02-16
JP2024517581A (ja) 2024-04-23
KR20230165841A (ko) 2023-12-05
TW202307249A (zh) 2023-02-16
JP2024516091A (ja) 2024-04-12
KR20230165332A (ko) 2023-12-05

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