JP2022504927A5 - - Google Patents
Info
- Publication number
- JP2022504927A5 JP2022504927A5 JP2021520542A JP2021520542A JP2022504927A5 JP 2022504927 A5 JP2022504927 A5 JP 2022504927A5 JP 2021520542 A JP2021520542 A JP 2021520542A JP 2021520542 A JP2021520542 A JP 2021520542A JP 2022504927 A5 JP2022504927 A5 JP 2022504927A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- epitaxial layer
- carbon buffer
- buffer layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025031453A JP2025074197A (ja) | 2018-10-16 | 2025-02-28 | 昇華させられたｓｉｃ基板上のカーボンバッファを用いたエピタキシャル成長テンプレート |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862746072P | 2018-10-16 | 2018-10-16 | |
| US62/746,072 | 2018-10-16 | ||
| PCT/US2019/056428 WO2020081623A1 (en) | 2018-10-16 | 2019-10-16 | Epitaxial growth template using carbon buffer on sublimated sic substrate |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025031453A Division JP2025074197A (ja) | 2018-10-16 | 2025-02-28 | 昇華させられたｓｉｃ基板上のカーボンバッファを用いたエピタキシャル成長テンプレート |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022504927A JP2022504927A (ja) | 2022-01-13 |
| JP2022504927A5 true JP2022504927A5 (https=) | 2022-11-09 |
| JP7689371B2 JP7689371B2 (ja) | 2025-06-06 |
Family
ID=70283187
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021520542A Active JP7689371B2 (ja) | 2018-10-16 | 2019-10-16 | 昇華させられたｓｉｃ基板上のカーボンバッファを用いたエピタキシャル成長テンプレート |
| JP2025031453A Pending JP2025074197A (ja) | 2018-10-16 | 2025-02-28 | 昇華させられたｓｉｃ基板上のカーボンバッファを用いたエピタキシャル成長テンプレート |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025031453A Pending JP2025074197A (ja) | 2018-10-16 | 2025-02-28 | 昇華させられたｓｉｃ基板上のカーボンバッファを用いたエピタキシャル成長テンプレート |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12308227B2 (https=) |
| EP (1) | EP3867064A4 (https=) |
| JP (2) | JP7689371B2 (https=) |
| KR (1) | KR102911060B1 (https=) |
| CN (1) | CN112839813A (https=) |
| WO (1) | WO2020081623A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102750647B1 (ko) * | 2022-02-10 | 2025-01-06 | 아주대학교산학협력단 | 층수가 제어된 2차원 물질의 제조 방법 |
| US20240047203A1 (en) * | 2022-08-04 | 2024-02-08 | Future Semiconductor Business, Inc | Monolithic remote epitaxy of compound semi conductors and 2d materials |
| KR20250150609A (ko) * | 2023-03-27 | 2025-10-20 | 미쓰비시덴키 가부시키가이샤 | 반도체 디바이스의 제조 방법 및 접합 웨이퍼 |
| WO2025062658A1 (ja) * | 2023-09-22 | 2025-03-27 | 日本碍子株式会社 | 半導体ウエハ、半導体ウエハ製造方法 |
| WO2025135578A1 (ko) * | 2023-12-19 | 2025-06-26 | 주식회사 엘엑스세미콘 | 전력반도체 제조용 반도체 기판과 이의 제조방법 및 이를 이용한 전력반도체 소자의 제조방법 |
| KR102892761B1 (ko) * | 2024-02-05 | 2025-11-27 | 성균관대학교산학협력단 | 결정 및 준결정 접합 구조체, 및 그 제조 방법 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8409366B2 (en) | 2009-06-23 | 2013-04-02 | Oki Data Corporation | Separation method of nitride semiconductor layer, semiconductor device, manufacturing method thereof, semiconductor wafer, and manufacturing method thereof |
| US20120141799A1 (en) | 2010-12-03 | 2012-06-07 | Francis Kub | Film on Graphene on a Substrate and Method and Devices Therefor |
| JPWO2012099209A1 (ja) * | 2011-01-21 | 2014-06-30 | 株式会社ブリヂストン | 炭化ケイ素単結晶基板及び半導体素子の製造方法 |
| CN103378223B (zh) * | 2012-04-25 | 2016-07-06 | 清华大学 | 外延结构体的制备方法 |
| CN103779396B (zh) * | 2012-10-22 | 2016-10-19 | 清华大学 | 石墨烯基复合结构及其制备方法 |
| CN103117317B (zh) * | 2013-01-31 | 2015-08-19 | 电子科技大学 | 一种硅面SiC衬底上的石墨烯光电器件及其制备方法 |
| US8916451B2 (en) * | 2013-02-05 | 2014-12-23 | International Business Machines Corporation | Thin film wafer transfer and structure for electronic devices |
| JP6041346B2 (ja) * | 2013-02-06 | 2016-12-07 | 国立大学法人名古屋大学 | グラフェン／ＳｉＣ複合材料の製造方法及びそれにより得られるグラフェン／ＳｉＣ複合材料 |
| JP5882928B2 (ja) * | 2013-02-26 | 2016-03-09 | 日本電信電話株式会社 | グラフェンの作製方法 |
| US9096050B2 (en) * | 2013-04-02 | 2015-08-04 | International Business Machines Corporation | Wafer scale epitaxial graphene transfer |
| US9337274B2 (en) * | 2013-05-15 | 2016-05-10 | Globalfoundries Inc. | Formation of large scale single crystalline graphene |
| WO2014190352A1 (en) * | 2013-05-24 | 2014-11-27 | The University Of North Carolina At Charlotte | Growth of semiconductors on hetero-substrates using graphene as an interfacial layer |
| CN105874613A (zh) | 2013-09-23 | 2016-08-17 | 量子半导体有限公司 | 超晶格材料和应用 |
| US9574287B2 (en) | 2013-09-26 | 2017-02-21 | Globalfoundries Inc. | Gallium nitride material and device deposition on graphene terminated wafer and method of forming the same |
| CN119349566A (zh) * | 2015-09-08 | 2025-01-24 | 麻省理工学院 | 基于石墨烯的层转移的系统和方法 |
-
2019
- 2019-10-16 CN CN201980067491.2A patent/CN112839813A/zh active Pending
- 2019-10-16 JP JP2021520542A patent/JP7689371B2/ja active Active
- 2019-10-16 KR KR1020217014717A patent/KR102911060B1/ko active Active
- 2019-10-16 WO PCT/US2019/056428 patent/WO2020081623A1/en not_active Ceased
- 2019-10-16 EP EP19872794.3A patent/EP3867064A4/en active Pending
- 2019-10-16 US US17/283,625 patent/US12308227B2/en active Active
-
2025
- 2025-02-28 JP JP2025031453A patent/JP2025074197A/ja active Pending
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